Si824x

CLASS D AUDIO DRIVER WI TH P R E C I S I O N D E AD - T I M E G E N E R A T O R

Features
 0.5 A peak output (Si8241)  Input to output isolation for low noise
 4.0 A peak output (Si8244) (up to 2500 V)
 Up to 8 MHz operation
 PWM input
 Wide operating range
 High-precision linear programmable
–40 to +125 °C
dead-time generator
 Transient immunity >45 kV/µs
0.4 ns to 1 µs
 RoHS-compliant
 High latchup immunity >100 V/ns
SOIC-16 narrow body
 Up to 1500 Vrms output-output
isolation, supply voltage of ±750 V

Applications
Ordering Information:
 Class D audio amplifiers See page 25.

Description
Pin Assignments
The Si824x isolated driver family combines two isolated drivers in a single
package. The Si8241/44 are high-side/low-side drivers specifically targeted at
high-power (>30 W) audio applications. Versions with peak output currents of
0.5 A (Si8241) and 4.0 A (Si8244) are available. All drivers operate with a
SOIC-16 (Narrow)
maximum supply voltage of 24 V. PWM 1 16 VDDA
Based on Silicon Labs' proprietary isolation technology, the Si824x audio drivers
incorporate input-to-output and output-to-output isolation, which enables level- NC 2 15 VOA
translation of signals without additional external circuits as well as use of bipolar VDDI 3 14 GNDA
supply voltage up to ±750 V. The Si824x audio drivers feature an integrated dead-
time generator that provides highly precise control for achieving optimal THD. GNDI 4 13 NC
Si8241/44
These products also have overlap protection that safeguards against shoot- DISABLE 5 12 NC
through current damage. The CMOS-based design also provides robust immunity
from latch-up and high-voltage transients. The extremely low propagation delays DT 6 11 VDDB
enable faster modulation frequencies for an enhanced audio experience. The TTL NC 7 10 VOB
level compatible inputs with >400 mV hysteresis are available in PWM input
configuration; other options include UVLO levels of 8 V or 10 V. These products VDDI 8 9 GNDB
are available in narrow body SOIC packages.
Functional Block Diagram Patents Pending

PWM
VDDA
Isolation

VOA
DT

GNDA
VDDI Programmable Dead
Time, Control Gating
UVLO
VDDB
Isolation

DISABLE VOB

GNDB

GNDI

Si8241/44

Rev. 0.2 2/11 Copyright © 2011 by Silicon Laboratories Si824x

This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Si824x

2 Rev. 0.2
 Si824x
TABLE O F C ONTENTS

Section Page
1. Top-Level Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.1. Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1. Typical Performance Characteristics (0.5 Amp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.2. Typical Performance Characteristics (4.0 Amp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3. Family Overview and Logic Operation During Startup . . . . . . . . . . . . . . . . . . . . . . . 17
3.4. Power Supply Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5. Power Dissipation Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
3.6. Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.7. Undervoltage Lockout Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.8. Programmable Dead Time and Overlap Protection . . . . . . . . . . . . . . . . . . . . . . . . . 22
4. Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.1. Class D Digital Audio Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
9. Top Marking: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30

Rev. 0.2 3
Si824x
1. Top-Level Block Diagram

VDDI
VDDA
PWM

ISOLATION
LPWM
VOA

UVLO
GNDA
DT CONTROL
&
DT OVERLAP
PROTECTION

VDDI
VDDI
VDDI VDDB

ISOLATION
UVLO

VOB

UVLO
DISABLE
GNDB

LPWM

GNDI

Si8241/44
Figure 1. Si8241/44 Single-Input High-Side/Low-Side Isolated Drivers

4 Rev. 0.2
 Si824x
2. Electrical Specifications

Table 1. Electrical Characteristics1

4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C

Parameter Symbol Test Conditions Min Typ Max Units

DC Specifications
Input-Side Power Supply
VDDI 4.5 — 5.5 V
Voltage
Voltage between VDDA and
Driver Supply Voltage VDDA, VDDB GNDA, and VDDB and GNDB 6.5 — 24 V
(See “6. Ordering Guide” )
Input Supply Quiescent
IDDI(Q) Si8241/44 — 2 3 mA
Current
Output Supply Quiescent IDDA(Q),
Current per channel — — 3.0 mA
Current IDDB(Q)

Input Supply Active Current IDDI PWM freq = 500 kHz — 2.5 — mA

Output Supply Active Current IDDO PWM freq = 500 kHz — 3.6 — mA

Input Pin Leakage Current IPWM –10 — +10 µA dc

Input Pin Leakage Current IDISABLE –10 — +10 µA dc

Logic High Input Threshold VIH 2.0 — — V

Logic Low Input Threshold VIL — — 0.8 V

Input Hysteresis VIHYST 400 450 — mV

(VDDA
VOAH,
Logic High Output Voltage IOA, IOB = –1 mA /VDDB) — — V
VOBH
— 0.04

Logic Low Output Voltage VOAL, VOBL IOA, IOB = 1 mA — — 0.04 V

Output Short-Circuit Pulsed IOA(SCL), Si8241, Figure 2 — 0.5 — A

Sink Current IOB(SCL) Si8244, Figure 2 — 4.0 — A

Output Short-Circuit Pulsed IOA(SCH), Si8241, Figure 3 — 0.25 — A

Source Current IOB(SCH) Si8244, Figure 3 — 2.0 — A
Si8241 — 5.0 — 
Output Sink Resistance RON(SINK)
Si8244 — 1.0 — 
Si8241 — 15 — 
Output Source Resistance RON(SOURCE)
Si8244 — 2.7 — 
Notes:
1. VDDA = VDDB = 12 V for 8 V UVLO and 10 V UVLO devices.
2. The largest RDT resistor that can be used is 220 k.

Rev. 0.2 5
Si824x
Table 1. Electrical Characteristics1 (Continued)
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C

Parameter Symbol Test Conditions Min Typ Max Units

VDDI Undervoltage Threshold VDDIUV+ VDDI rising 3.60 4.0 4.45 V

VDDI Undervoltage Threshold VDDIUV– VDDI falling 3.30 3.70 4.15 V

VDDI Lockout Hysteresis VDDIHYS — 250 — mV

VDDA, VDDB Undervoltage VDDAUV+,

VDDA, VDDB rising
Threshold VDDBUV+

8 V Threshold See Figure 34 on page 21. 7.50 8.60 9.40 V

10 V Threshold See Figure 35 on page 21. 9.60 11.1 12.2 V

VDDA, VDDB Undervoltage VDDAUV–,

VDDA, VDDB falling
Threshold VDDBUV–

8 V Threshold See Figure 34 on page 21. 7.20 8.10 8.70 V

10 V Threshold See Figure 35 on page 21. 9.40 10.1 10.9 V

VDDA, VDDB VDDAHYS,

UVLO voltage = 8 V — 600 — mV
Lockout Hysteresis VDDBHYS

VDDA, VDDB VDDAHYS,

UVLO voltage = 10 V — 1000 — mV
Lockout Hysteresis VDDBHYS
AC Specifications
Minimum Pulse Width — 10 — ns
Propagation Delay tPHL, tPLH CL = 1 nF — 25 60 ns
Pulse Width Distortion PWD — 1.0 5.60 ns
|tPLH - tPHL|
Programmed Dead Time2 DT See Figures 36 and 37 0.4 — 1000 ns
CL = 1 nF (Si8241) — — 20 ns
Output Rise and Fall Time tR,tF
CL = 1 nF (Si8244) — — 12 ns
Shutdown Time from
tSD — — 60 ns
Disable True
Restart Time from tRESTART — — 60 ns
Disable False
Time from VDD_ = VDD_UV+
Device Start-up Time tSTART — 5 7 µs
to VOA, VOB = VIA, VIB
Common Mode
CMTI VIA, VIB, PWM = VDDI or 0 V 25 45 — kV/µs
Transient Immunity
Notes:
1. VDDA = VDDB = 12 V for 8 V UVLO and 10 V UVLO devices.
2. The largest RDT resistor that can be used is 220 k.

6 Rev. 0.2
 Si824x
2.1. Test Circuits
Figures 2 and 3 depict sink current and source current test circuits.

VDDA = VDDB = 15 V
VDDI
(5 V) VDD
10
IN_ OUT_
INPUT Si824x

SCHOTTKY +
VSS 1 µF 100 µF 5V _

1 µF 10 µF
Measure
CER EL
RSNS
50 ns 0.1
VDDI

GND
200 ns

INPUT WAVEFORM

Figure 2. Sink Current Test Circuit

VDDA = VDDB = 15 V
VDDI
(5 V) VDD
10
IN_ OUT_
INPUT Si824x

SCHOTTKY
+
VSS 1 µF 100 µF 5V _

1 µF 10 µF
Measure
CER EL
RSNS
50 ns 0.1
VDDI

GND
200 ns

INPUT WAVEFORM

Figure 3. Source Current Test Circuit

Rev. 0.2 7
Si824x

Table 2. Absolute Maximum Ratings1

Parameter Symbol Min Typ Max Units
Storage Temperature2 TSTG –65 — +150 °C
Ambient Temperature under Bias TA –40 — +125 °C
Input-side Supply Voltage VDDI –0.6 — 6.0 V
Driver-side Supply Voltage VDDA, VDDB –0.6 — 30 V
Voltage on any Pin with respect to Ground VIN –0.5 — VDD + 0.5 V
Output Drive Current per Channel IO — — 10 mA
Lead Solder Temperature (10 sec) — — 260 °C
Latchup Immunity3 — — 100 V/ns
Maximum Isolation (Input to Output) — — 2500 VRMS
Maximum Isolation (Output to Output) — — 1500 VRMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. VDE certifies storage temperature from –40 to 150 °C.
3. Latchup immunity specification is for slew rate applied across GNDI and GNDA or GNDB.

Table 3. Regulatory Information*

CSA
The Si824x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 300 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage.
60950-1: Up to 300 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage.
VDE
The Si824x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 560 Vpeak for basic insulation working voltage.
UL
The Si824x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 2500 VRMS isolation voltage for basic protection.
*Note: Regulatory Certifications apply to 2.5 kVRMS rated devices, which are production tested to 3.0 kVRMS for 1 sec.
For more information, see "6.Ordering Guide" on page 25.

8 Rev. 0.2
 Si824x

Table 4. Insulation and Safety-Related Specifications

Value
Parameter Symbol Test Condition NBSOIC-16 Unit
2.5 kVRMS
Nominal Air Gap
L(1O1) 4.01 mm
(Clearance)1
Nominal External Tracking (Creepage)1 L(1O2) 4.01 mm
Minimum Internal Gap
0.011 mm
(Internal Clearance)
Tracking Resistance
PTI IEC60112 600 V
(Proof Tracking Index)
Erosion Depth ED 0.019 mm
Resistance
RIO 1012 
(Input-Output)2
Capacitance
CIO f = 1 MHz 1.4 pF
(Input-Output)2
Input Capacitance3 CI 4.0 pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Narrow Body SOIC” . VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-16.
UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC 16.
2. To determine resistance and capacitance, the Si824x is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.

Table 5. IEC 60664-1 (VDE 0884 Part 2) Ratings

Specification
Parameter Test Conditions
NB SOIC-16
Basic Isolation Group Material Group I
Rated Mains Voltages < 150 VRMS I-IV
Rated Mains Voltages < 300 VRMS I-III
Installation Classification
Rated Mains Voltages < 400 VRMS I-II
Rated Mains Voltages < 600 VRMS I-II

Rev. 0.2 9
Si824x

Table 6. IEC 60747-5-2 Insulation Characteristics*

Characteristic
Parameter Symbol Test Condition Unit
NB SOIC-16
Maximum Working Insulation Voltage VIORM 560 V peak
Method b1
(VIORM x 1.875 = VPR,
Input to Output Test Voltage VPR 100% 1050 V peak
Production Test, tm = 1 sec,
Partial Discharge < 5 pC)
Transient Overvoltage VIOTM t = 60 sec 4000 V peak
Pollution Degree
2
(DIN VDE 0110, Table 1)
Insulation Resistance at TS,
RS >109 
VIO = 500 V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si824x provides a climate classification of
40/125/21.

Table 7. IEC Safety Limiting Values1

Parameter Symbol Test Condition NB SOIC-16 Unit
Case Temperature TS 150 °C
JA = 105 °C/W (NB SOIC-16),
VDDI = 5.5 V,
Safety Input Current IS 50 mA
VDDA = VDDB= 24 V,
TJ = 150 °C, TA = 25 °C
Device Power Dissipation2 PD 1.2 W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 4.
2. The Si82xx is tested with VDDI = 5.5 V, VDDA = VDDB = 24 V, TJ = 150 ºC, CL = 100 pF, input 2 MHz 50% duty cycle
square wave.

10 Rev. 0.2
 Si824x

Table 8. Thermal Characteristics

NB
Parameter Symbol Unit
SOIC-16
IC Junction-to-Air
JA 105 °C/W
Thermal Resistance

60
Safety-Limiting Current (mA)

50
VDDI = 5.5 V
40 VDDA, VDDB = 24 V

30
20

10
0
0 50 100 150 200
Case Temperature (ºC)
Figure 4. NB SOIC-16, Thermal Derating Curve, Dependence of Safety Limiting Values with Case
Temperature per DIN EN 60747-5-2

Rev. 0.2 11
Si824x
3. Functional Description
The operation of an Si824x channel is analogous to that of an opto coupler and gate driver, except an RF carrier is
modulated instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si824x channel is shown in
Figure 5.

Transmitter Receiver Driver

RF Oscillator

VDD
Semiconductor-
Dead
Based Isolation B
A Time Modulator Demodulator
Barrier 0.5 to 4 A
Generator
peak

Gnd

Figure 5. Simplified Channel Diagram

A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 6 for more details.

Input Signal

Modulation Signal

Output Signal
Figure 6. Modulation Scheme

12 Rev. 0.2
 Si824x
3.1. Typical Performance Characteristics (0.5 Amp)
The typical performance characteristics depicted in Figures 7 through 18 are for information purposes only. Refer
to Table 1 on page 5 for actual specification limits.

10

VDDA Supply Current (mA)

8 Duty Cycle = 50%
6 CL = 100 pF 1MHz
Rise/Fall Time (ns)

Tfall 1 Channel Switching

5
6 500kHz
4
3 100kHz
4 Trise
2
1
2 50 kHz
VDD=12V, 25°C
CL = 100 pF 0
9 14 19 24
0
VDDA Supply Voltage (V)
9 12 15 18 21 24
VDDA Supply (V)

Figure 7. Rise/Fall Time vs. Supply Voltage Figure 10. Supply Current vs. Supply Voltage

30 Supply Current (mA) 5

Propagation Delay (ns)

25 4

H-L
3
20 VDDA = 15V,
f = 250kHz, CL = 0 pF
L-H 2 Duty Cycle = 50%
15 2 Channels Switching
VDD=12V, 25°C 1
CL = 100 pF
-50 0 50 100
10
Temperature (°C)
9 12 15 18 21 24
VDDA Supply (V)

Figure 8. Propagation Delay vs. Supply Voltage Figure 11. Supply Current vs. Temperature

40

35
4 Trise
Duty Cycle = 50% 30
Rise/Fall Time (ns)
VDDA Supply Current (mA)

3.5 CL = 0 pF
1 Channel Switching 1MHz 25
3
20 Tfall
2.5 500kHz
15
2 100kHz 10

1.5 5
50 kHz VDD=12V, 25°C
1 0
9 14 19 24 0.0 0.5 1.0 1.5 2.0
VDDA Supply Voltage (V) Load (nF)

Figure 9. Supply Current vs. Supply Voltage Figure 12. Rise/Fall Time vs. Load

Rev. 0.2 13
Si824x

50 4

45 3.75
Propagation Delay (ns)

40 3.5

Source Current (A)

35 L-H 3.25

30 3
H-L
25 2.75

20 2.5

15 2.25
VDD=12V, 25°C VDD=12V, Vout=VDD-5V
10 2
0.0 0.5 1.0 1.5 2.0 10 15 20 25
Load (nF) Supply Voltage (V)

Figure 13. Propagation Delay vs. Load Figure 16. Output Source Current vs. Supply
Voltage
30
7
6.75
Propagation Delay (ns)

25 6.5
L-H 6.25

Sink Current (A)

6
20 5.75
H-L
5.5
5.25
15 5
4.75
VDD=12V, Load = 200pF 4.5
10 4.25 VDD=12V, Vout=5V
-40 -20 0 20 40 60 80 100 120 4
Temperature (°C) -40 -10 20 50 80 110
Temperature (°C)
Figure 14. Propagation Delay vs. Temperature
Figure 17. Output Sink Current vs. Temperature
9
3.5
8
3.25
Sink Current (A)

Source Current (A)

7
3

6 2.75

2.5
5

VDD=12V, Vout=5V 2.25

4
VDD=12V, Vout=VDD-5V
10 12 14 16 18 20 22 24 2
Supply Voltage (V) -40 -10 20 50 80 110
Temperature (°C)
Figure 15. Output Sink Current vs. Supply
Voltage Figure 18. Output Source Current vs.
Temperature

14 Rev. 0.2
 Si824x
3.2. Typical Performance Characteristics (4.0 Amp)
The typical performance characteristics depicted in Figures 19 through 30 are for information purposes only. Refer
to Table 1 on page 5 for actual specification limits.

10

VDDA Supply Current (mA)

14 Duty Cycle = 50%
1MHz
12 CL = 100 pF
8 1 Channel Switching
Rise/Fall Time (ns)

Tfall 10
8 500kHz
6
6
Trise
4 100kHz
4
2
50 kHz
0
2 9 14 19 24
VDD=12V, 25°C
CL = 100 pF VDDA Supply Voltage (V)

0
9 12 15 18 21 24
Figure 22. Supply Current vs. Supply Voltage
VDDA Supply (V)
10
Figure 19. Rise/Fall Time vs. Supply Voltage

Supply Current (mA)

8

30 6

4 VDDA = 15V,
Propagation Delay (ns)

f = 250kHz, CL = 0 pF
25
Duty Cycle = 50%
2
2 Channels Switching
L-H
0
20
-50 0 50 100

H-L Temperature (°C)

15
VDD=12V, 25°C Figure 23. Supply Current vs. Temperature
CL = 100 pF
10
40
9 12 15 18 21 24
VDDA Supply (V) 35
Trise
30
Rise/Fall Time (ns)

Figure 20. Propagation Delay vs. Supply 25

Voltage
20 Tfall

15

14 Duty Cycle = 50% 10

VDDA Supply Current (mA)

CL = 0 pF
12 1MHz
1 Channel Switching 5
10 VDD=12V, 25°C
0
8
500kHz 0 1 2 3 4 5 6 7 8 9 10
6
4
Load (nF)
100kHz
2
50 kHz
Figure 24. Rise/Fall Time vs. Load
0
9 14 19 24
VDDA Supply Voltage (V)

Figure 21. Supply Current vs. Supply Voltage

Rev. 0.2 15
Si824x

50 4

45 3.75
H-L
Propagation Delay (ns)

40 3.5

Source Current (A)

3.25
35
L-H
3
30
2.75
25
2.5
20
2.25
15 VDD=12V, Vout=VDD-5V
VDD=12V, 25°C 2
10
10 15 20 25
0 1 2 3 4 5 6 7 8 9 10
Supply Voltage (V)
Load (nF)
Figure 28. Output Source Current vs. Supply
Figure 25. Propagation Delay vs. Load Voltage

30 7
6.75
6.5
Propagation Delay (ns)

25 H-L
6.25
Sink Current (A)
6
L-H 5.75
20 5.5
5.25
5
15 4.75
4.5
VDD=12V, Load = 200pF 4.25 VDD=12V, Vout=5V
10 4
-40 -20 0 20 40 60 80 100 120 -40 -10 20 50 80 110
Temperature (°C) Temperature (°C)

Figure 26. Propagation Delay vs. Temperature Figure 29. Output Sink Current vs. Temperature

9 3.5

3.25
8
Source Current (A)
Sink Current (A)

3
7
2.75
6
2.5

5
2.25
VDD=12V, Vout=5V
VDD=12V, Vout=VDD-5V
4 2
10 12 14 16 18 20 22 24 -40 -10 20 50 80 110
Supply Voltage (V) Temperature (°C)

Figure 27. Output Sink Current vs. Supply Figure 30. Output Source Current vs.
Voltage Temperature

16 Rev. 0.2
 Si824x
3.3. Family Overview and Logic Operation During Startup
The Si824x family of isolated drivers consists of high-side, low-side, and dual driver configurations.
3.3.1. Products
Table 9 shows the configuration and functional overview for each product in this family.

Table 9. Si824x Family Overview

Part Number Configuration UVLO Voltage Programmable Inputs Peak Output
Dead Time Current (A)
Si8241 High-Side/Low-Side 8 V/10 V  PWM 0.5
Si8244 High-Side/Low-Side 8 V/10 V  PWM 4.0

3.3.2. Device Behavior

Table 10 contains truth tables for the Si8241/4 families.

Table 10. Si824x Family Truth Table*

Si8241/4 (PWM Input High-Side/Low-Side) Truth Table
Output
PWM Input VDDI State Disable Notes
VOA VOB
Output transition occurs after internal dead time
H Powered L H L
expires.
Output transition occurs after internal dead time
L Powered L L H
expires.
Output returns to input state within 7 µs of VDDI
X Unpowered X L L
power restoration.
X Powered H L L Device is disabled.
*Note: This truth table assumes VDDA and VDDB are powered. If VDDA and VDDB are below UVLO, see
"3.7.2.Undervoltage Lockout" on page 20 for more information.

Rev. 0.2 17
Si824x
3.4. Power Supply Connections
Isolation requirements mandate individual supplies for VDDI, VDDA, and VDDB. The decoupling caps for these
supplies must be placed as close to the VDD and GND pins of the Si824x as possible. The optimum values for
these capacitors depend on load current and the distance between the chip and the regulator that powers it. Low
effective series resistance (ESR) capacitors, such as Tantalum, are recommended.
3.5. Power Dissipation Considerations
Proper system design must assure that the Si824x operates within safe thermal limits across the entire load range.
The Si824x total power dissipation is the sum of the power dissipated by bias supply current, internal switching
losses, and power delivered to the load. Equation 1 shows total Si824x power dissipation. In a non-overlapping
system, such as a high-side/low-side driver, n = 1.

2 2
P D = V DDI I DDI + 2  V DDO I QOUT + C int V DDO F  + 2n  C L V DDO F 
where:
P D is the total Si824x device power dissipation (W)
I DDI is the input-side maximum bias current (3 mA)
I QOUT is the driver die maximum bias current (2.5 mA)
C int is the internal parasitic capacitance (75 pF for the 0.5 A driver and 370 pF for the 4.0 A driver)
V DDI is the input-side VDD supply voltage (4.5 to 5.5 V)
V DDO is the driver-side supply voltage (10 to 24 V)
F is the switching frequency (Hz)
n is the overlap constant (max value = 2)
Equation 1.
The maximum power dissipation allowable for the Si824x is a function of the package thermal resistance, ambient
temperature, and maximum allowable junction temperature, as shown in Equation 2:

T jmax – T A
P Dmax  ---------------------------
ja
where:
P Dmax = Maximum Si824x power dissipation (W)
T jmax = Si824x maximum junction temperature (150 °C)
T A = Ambient temperature (°C)
ja = Si824x junction-to-air thermal resistance (105 °C/W)
F = Si824x switching frequency (Hz)

Equation 2.
Substituting values for PDmax Tjmax, TA, and ja into Equation 2 results in a maximum allowable total power
dissipation of 1.19 W. Maximum allowable load is found by substituting this limit and the appropriate datasheet
values from Table 1 on page 5 into Equation 1 and simplifying. The result is Equation 3 (0.5 A driver) and
Equation 4 (4.0 A driver), both of which assume VDDI = 5 V and VDDA = VDDB = 18 V.

–3
1.4  10 – 11
C L(MAX) = -------------------------- – 7.5  10
F
Equation 3.
–3
1.4  10 – 10
C L(MAX) = -------------------------- – 3.7  10
F
Equation 4.

18 Rev. 0.2
 Si824x
Equation 1 and Equation 2 are graphed in Figure 31 where the points along the load line represent the package
dissipation-limited value of CL for the corresponding switching frequency.

1 6 ,0 0 0

1 4 ,0 0 0 0 .5 A D r i ve r ( p F )
4 A D r i ve r ( p F )
1 2 ,0 0 0

1 0 ,0 0 0
Max Load (pF)

8 ,0 0 0

Ta = 25 °C
6 ,0 0 0

4 ,0 0 0

2 ,0 0 0

0
100

150

200

250

300

350

400

450

500

550

600

650

700
F re q u e n c y (K h z )

Figure 31. Max Load vs. Switching Frequency

20
VDDA Supply Current (mA)

CL = 1000pF
15

10 CL = 500pF

CL = 200pF
5

VDD=15V, 25°C
0
0 200 400 600 800 1000
Switching Frequency (kHz)
Figure 32. Switching Frequency vs. Load Current

Rev. 0.2 19
Si824x
3.6. Layout Considerations
It is most important to minimize ringing in the drive path and noise on the Si824x VDD lines. Care must be taken to
minimize parasitic inductance in these paths by locating the Si824x as close to the device it is driving as possible.
In addition, the VDD supply and ground trace paths must be kept short. For this reason, the use of power and
ground planes is highly recommended. A split ground plane system having separate ground and VDD planes for
power devices and small signal components provides the best overall noise performance.
3.7. Undervoltage Lockout Operation
Device behavior during start-up, normal operation and shutdown is shown in Figure 33, where UVLO+ and UVLO-
are the positive-going and negative-going thresholds respectively. Note that outputs VOA and VOB default low
when input side power supply (VDDI) is not present.
3.7.1. Device Startup
Outputs VOA and VOB are held low during power-up until VDD is above the UVLO threshold for time period
tSTART. Following this, the outputs follow the states of inputs VIA and VIB.
3.7.2. Undervoltage Lockout
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or
when VDD is below its specified operating circuits range. The input (control) side, Driver A and Driver B, each have
their own undervoltage lockout monitors.
The Si824x input side enters UVLO when VDDI < VDDIUV–, and exits UVLO when VDDI > VDDIUV+. The driver
outputs, VOA and VOB, remain low when the input side of the Si824x is in UVLO and their respective VDD supply
(VDDA, VDDB) is within tolerance. Each driver output can enter or exit UVLO independently. For example, VOA
unconditionally enters UVLO when VDDA falls below VDDAUV– and exits UVLO when VDDA rises above
VDDAUV+.

UVLO+
VDD HYS
UVLO-

VDDI

UVLO+
VDD HYS
UVLO-

VDDA

PW M

DISABLE
tSD tSD tRESTART tPHL tPLH
tSTART tSTART tSTART

VOA

Figure 33. Device Behavior during Normal Operation and Shutdown

20 Rev. 0.2
 Si824x
3.7.3. Undervoltage Lockout (UVLO)
The UVLO circuit unconditionally drives VO low when VDD is below the lockout threshold. Referring to Figures 34
and 35, upon power up, the Si824x is maintained in UVLO until VDD rises above VDDUV+. During power down, the
Si824x enters UVLO when VDD falls below the UVLO threshold plus hysteresis (i.e., VDD < VDDUV+ – VDDHYS).

V DDUV+ (Typ) V DDUV+ (Typ)

Output Voltage (VO) 10.5

Output Voltage (VO) 10.5

6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Supply Voltage (V DD - V SS) (V) Supply Voltage (V DD - V SS) (V)

Figure 34. Si824x UVLO Response (8 V) Figure 35. Si824x UVLO Response (10 V)
3.7.4. Control Inputs
PWM inputs are high-true, TTL level-compatible logic inputs. VOA is high and VOB is low when the PWM input is
high, and VOA is low and VOB is high when the PWM input is low.
3.7.5. Disable Input
When brought high, the DISABLE input unconditionally drives VOA and VOB low regardless of the states of input.
Device operation terminates within tSD after DISABLE = VIH and resumes within tRESTART after DISABLE = VIL.
The DISABLE input has no effect if VDDI is below its UVLO level (i.e. VOA, VOB remain low). The DISABLE input
is typically connected to external protection circuitry to unconditionally halt driver operation in the event of a fault.

Rev. 0.2 21
Si824x
3.8. Programmable Dead Time and Overlap Protection
All high-side/low-side drivers (Si8241/4) include programmable overlap protection to prevent outputs VOA and
VOB from being high at the same time. These devices also include programmable dead time, which adds a user-
programmable delay between transitions of VOA and VOB. When enabled, dead time is present on all transitions,
even after overlap recovery. The amount of dead time delay (DT) is programmed by a single resistor (RDT)
connected from the DT input to ground per Equation 5. Minimum dead time (approximately 400 ps) can be
achieved by connecting the DT pin to VDDI. Note that dead time accuracy is limited by the resistor’s (RDT)
tolerance and temperature coefficient. See Figures 36 and 37 for additional information about dead time operation.

DT  10  RDT
where:
DT = dead time (ns)
and
RDT = dead time programming resistor (k 

Equation 5.

1000
900
800
700
Dead-time (ns)

600
500
400
300
200
100
0
0 20 40 60 80 100

:)
Dead-time Resistance (k:

Figure 36. Dead Time vs.Resistance (RDT)

100
90 RDT = 10k

80
RDT = 6k
70
Dead-time (ns)

60 RDT = 5k
50
RDT = 4k
40
RDT = 3k
30
20 RDT = 2k

10 RDT = 1k
RDT = 0
0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)

Figure 37. Dead Time vs.Temperature

22 Rev. 0.2
 Si824x
4. Applications
The following examples illustrate typical circuit configurations using the Si824x.
4.1. Class D Digital Audio Driver
Figures 38 and 39 show the Si8241/4 controlled by a single PWM signal. Supply can be unipolar (0 to 1500 V) or
bipolar (± 750 V).

VDD2 D1
VDDI
C2
VDDI 1 µF

C1
1500 V max
1uF

GNDI VDDA

CB
PWMOUT PWM Q1
VOA

DT GNDA

RDT
CONTROLLER Si8241/4
VDDB
VDDB
C3
10uF
I/O DISABLE
GNDB

Q2
VOB

Figure 38. Si824x in Half-Bridge Audio Application

VDD2 D1
VDDI
C2
VDDI 1 µF

C1
+750 V max
1uF

GNDI VDDA

CB
PWMOUT PWM Q1
VOA

DT GNDA

RDT
CONTROLLER Si8241/4
VDDB
VDDB
C3
10uF
I/O DISABLE
GNDB

Q2
VOB

-750 V max

Figure 39. Si824x in Half-Bridge Audio Application

D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver for Q1, which has
a maximum drain voltage of 1500 V. VOB is connected as a conventional low-side driver. Note that the input side of
the Si824x requires VDD in the range of 4.5 to 5.5 V, while the VDDA and VDDB output side supplies must be
between 6.5 and 24 V with respect to their respective grounds. The boot-strap start up time will depend on the CB
cap chosen. VDD2 is usually the same as VDDB. Also note that the bypass capacitors on the Si824x should be
located as close to the chip as possible. Moreover, it is recommended that 0.1 and 10 µF bypass capacitors be
used to reduce high frequency noise and maximize performance. The D1 diode should be a fast-recovery diode; it
should be able to withstand the maximum high voltage (e.g. 1500 V) and be low-loss. See “AN486: High-Side
Bootstrap Design Using Si823x ISODrivers in Power Delivery Systems” for more details in selecting the bootstrap
cap (CB) and diode (D1).

Rev. 0.2 23
Si824x
5. Pin Descriptions

SOIC-16 (Narrow)
PWM 1 16 VDDA
NC 2 15 VOA
VDDI 3 14 GNDA
GNDI 4 13 NC
Si8241/44
DISABLE 5 12 NC
DT 6 11 VDDB
NC 7 10 VOB
VDDI 8 9 GNDB

Table 11. Si8241/44 PWM Input HS/LS Isolated Driver (SOIC-16)

Pin Name Description
1 PWM PWM input.
2 NC No connection.
3 VDDI Input-side power supply terminal; connect to a source of 4.5 to 5.5 V.
4 GNDI Input-side ground terminal.
5 DISABLE Device Disable. When high, this input unconditionally drives outputs VOA, VOB LOW. It is
strongly recommended that this input be connected to external logic level to avoid erroneous
operation due to capacitive noise coupling.
6 DT Dead time programming input. The value of the resistor connected from DT to ground sets the
dead time between output transitions of VOA and VOB. Defaults to 1 ns dead time when con-
nected to VDDI or left open (see "3.8.Programmable Dead Time and Overlap Protection" on
page 22).
7 NC No connection.
8 VDDI Input-side power supply terminal; connect to a source of 4.5 to 5.5 V.
9 GNDB Ground terminal for Driver B.
10 VOB Driver B output (low-side driver).
11 VDDB Driver B power supply voltage terminal; connect to a source of 6.5 to 24 V.
12 NC No connection.
13 NC No connection.
14 GNDA Ground terminal for Driver A.
15 VOA Driver A output (high-side driver).
16 VDDA Driver A power supply voltage terminal; connect to a source of 6.5 to 24 V.

24 Rev. 0.2
 Si824x
6. Ordering Guide
The currently available OPNs are listed in Table 12.

Table 12. Ordering Part Numbers

Isolation
Ordering Part Drive UVLO Rating
Input Type Package Output
Number (OPN) Strength Voltage (Input to
Output)

Si8241BB-B-IS1 PWM NB SOIC-16 8V

0.5 A
Si8241CB-B-IS1 PWM NB SOIC-16 10 V
High-Side/Low-Side 2.5 kVrms
Si8244BB-C-IS1 PWM NB SOIC-16 8V
4A
Si8244CB-C-IS1 PWM NB SOIC-16 10 V
Note: All packages are RoHS-compliant.
Moisture sensitivity level is MSL3 for narrow-body SOIC-16 packages with peak reflow temperatures of 260 °C
according to the JEDEC industry standard classifications and peak solder temperatures. Tape and reel options are
specified by adding an “R” suffix to the ordering part number.

Rev. 0.2 25
Si824x
7. Package Outline: 16-Pin Narrow Body SOIC
Figure 40 illustrates the package details for the Si824x in a 16-pin narrow-body SOIC (SO-16). Table 13 lists the
values for the dimensions shown in the illustration.

Figure 40. 16-pin Small Outline Integrated Circuit (SOIC) Package

Table 13. Package Diagram Dimensions

Dimension Min Max Dimension Min Max
A — 1.75 L 0.40 1.27
A1 0.10 0.25 L2 0.25 BSC
A2 1.25 — h 0.25 0.50
b 0.31 0.51 θ 0° 8°
c 0.17 0.25 aaa 0.10
D 9.90 BSC bbb 0.20
E 6.00 BSC ccc 0.10
E1 3.90 BSC ddd 0.25
e 1.27 BSC
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to the JEDEC Solid State Outline MS-012, Variation AC.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.

26 Rev. 0.2
 Si824x
8. Land Pattern: 16-Pin Narrow Body SOIC
Figure 41 illustrates the recommended land pattern details for the Si824x in a 16-pin narrow-body SOIC. Table 14
lists the values for the dimensions shown in the illustration.

Figure 41. 16-Pin Narrow Body SOIC PCB Land Pattern

Table 14. 16-Pin Narrow Body SOIC Land Pattern Dimensions

Dimension Feature (mm)
C1 Pad Column Spacing 5.40
E Pad Row Pitch 1.27
X1 Pad Width 0.60
Y1 Pad Length 1.55
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.

Rev. 0.2 27
Si824x
9. Top Marking: 16-Pin Narrow Body SOIC

Si824YUV
e4 YYWWTTTTTT
Figure 42. 16-Pin Narrow Body SOIC Top Marking

Table 15. 16-Pin Narrow Body SOIC Top Marking Explanations

Si824 = ISOdriver product series
Y = Peak output current
Base Part Number  1 = 0.5 A
Ordering Options  4 = 4.0 A
Line 1 Marking:
U = UVLO level
See Ordering Guide for more
 B = 8 V; C = 10 V
information.
V = Isolation rating
 B = 2.5 kV

YY = Year Assigned by the Assembly House. Corresponds to the

WW = Workweek year and workweek of the mold date.
Line 2 Marking:
Manufacturing Code from Assembly Purchase Order
TTTTTT = Mfg Code
form.

28 Rev. 0.2
 Si824x
DOCUMENT CHANGE LIST
Revision 0.1 to Revision 0.2
 Deleted Table 3.
 Added Tables 3 through 8.
 Added Figure 4.
 Updated common-mode transient immunity
specification throughout.

Rev. 0.2 29
Si824x
CONTACT INFORMATION
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Austin, TX 78701
Tel: 1+(512) 416-8500
Fax: 1+(512) 416-9669
Toll Free: 1+(877) 444-3032
Please visit the Silicon Labs Technical Support web page:
https://www.silabs.com/support/pages/contacttechnicalsupport.aspx
and register to submit a technical support request.

The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features
or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, rep-
resentation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation conse-
quential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to
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Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.

30 Rev. 0.2