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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Dean Blanchette
    This document provides product specifications for the SavantIC Semiconductor 2SB600 silicon PNP power transistor. It includes descriptions of the TO-3 package, applications in audio and power amplifiers, pinning diagram, and maximum ratings for voltage, current, power, and temperature. Key characteristics are also listed such as breakdown voltages, saturation voltages, cut-off currents, current gain, and transition frequency. Dimensional details of the TO-3 package are shown.

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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Dean Blanchette
    41 views3 pages
    This document provides product specifications for the SavantIC Semiconductor 2SB600 silicon PNP power transistor. It includes descriptions of the TO-3 package, applications in audio and power amplifiers, pinning diagram, and maximum ratings for voltage, current, power, and temperature. Key characteristics are also listed such as breakdown voltages, saturation voltages, cut-off currents, current gain, and transition frequency. Dimensional details of the TO-3 package are shown.

    Original Description:

    datasheet and technical specifications for the 2sb600 transistor

    Original Title

    2sb600 transistor

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    This document provides product specifications for the SavantIC Semiconductor 2SB600 silicon PNP power transistor. It includes descriptions of the TO-3 package, applications in audio and power amplifiers, pinning diagram, and maximum ratings for voltage, current, power, and temperature. Key characteristics are also listed such as breakdown voltages, saturation voltages, cut-off currents, current gain, and transition frequency. Dimensional details of the TO-3 package are shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views3 pages

    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Dean Blanchette
    This document provides product specifications for the SavantIC Semiconductor 2SB600 silicon PNP power transistor. It includes descriptions of the TO-3 package, applications in audio and power amplifiers, pinning diagram, and maximum ratings for voltage, current, power, and temperature. Key characteristics are also listed such as breakdown voltages, saturation voltages, cut-off currents, current gain, and transition frequency. Dimensional details of the TO-3 package are shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB600

    DESCRIPTION
    ·With TO-3 package
    ·High power dissipations
    ·Complement to type 2SD555

    APPLICATIONS
    ·For use in audio and power
    amplifier applications

    PINNING(see Fig.2)

    PIN DESCRIPTION

    1 Base

    2 Emitter

    Fig.1 simplified outline (TO-3) and symbol


    3 Collector

    Absolute maximum ratings(Ta= )

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -200 V

    VCEO Collector-emitter voltage Open base -200 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -10 A

    PC Collector power dissipation TC=25 200 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~200


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB600

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -200 V

    V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V

    VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V

    VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.0 V

    ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA

    hFE DC current gain IC=-2A ; VCE=-5V 20

    fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz

    2
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB600

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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