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    2SD401 SavantIC

    Uploaded by

    achilles

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SD401 SavantIC

    Uploaded by

    achilles
    11 views4 pages

    Original Title

    2SD401_SavantIC

    Copyright

    © © All Rights Reserved

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views4 pages

    2SD401 SavantIC

    Uploaded by

    achilles

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD401

    DESCRIPTION
    www.datasheet4u.com
    ·With TO-220C package
    ·Complement to type 2SB546
    ·Collector current IC=2A
    ·Collector-base voltage VCBO=200V

    APPLICATIONS
    ·For use in general purpose power
    amplifier,vertical output application

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base

    3 Emitter

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 200 V

    VCEO Collector-emitter voltage Open base 150 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 2 A

    PC Collector power dissipation TC=25 25 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD401

    CHARACTERISTICS
    Tj=25 unless otherwise specified
    www.datasheet4u.com
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V

    V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 200 V

    V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IB=0 5 V

    VCEsat Collector-emitter saturation voltage IC=500m A;IB=50m A 1.0 V

    ICBO Collector cut-off current VCB=150V; IE=0 50 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 50 µA

    hFE DC current gain IC=0.4A ; VCE=10V 40 400

    fT Transition frequency IC=0.4A ; VCE=10V 5 MHz

    hFE classifications

    R O Y G

    40-80 70-140 120-240 200-400

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD401

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

    3
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD401

    www.datasheet4u.com

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