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    2SD799 SavantIC

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    A.h
    This document provides specifications for the SavantIC Semiconductor 2SD799 silicon NPN power transistor. It includes descriptions of the device, its applications in igniter and high voltage switching circuits, pinout, absolute maximum ratings, typical characteristics, and package outline dimensions.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SD799 SavantIC

    Uploaded by

    A.h
    18 views3 pages
    This document provides specifications for the SavantIC Semiconductor 2SD799 silicon NPN power transistor. It includes descriptions of the device, its applications in igniter and high voltage switching circuits, pinout, absolute maximum ratings, typical characteristics, and package outline dimensions.

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    2SD799_SavantIC

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    This document provides specifications for the SavantIC Semiconductor 2SD799 silicon NPN power transistor. It includes descriptions of the device, its applications in igniter and high voltage switching circuits, pinout, absolute maximum ratings, typical characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views3 pages

    2SD799 SavantIC

    Uploaded by

    A.h
    This document provides specifications for the SavantIC Semiconductor 2SD799 silicon NPN power transistor. It includes descriptions of the device, its applications in igniter and high voltage switching circuits, pinout, absolute maximum ratings, typical characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD799

    DESCRIPTION
    www.datasheet4u.com
    ·With TO-220 package
    ·High DC current gain
    ·DARLINGTON

    APPLICATIONS
    ·Igniter applications
    ·High voltage switching applications

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base

    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 600 V

    VCEO Collector-emitter voltage Open base 400 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 6 A

    IB Base current 1 A

    PC Collector power dissipation TC=25 30 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD799

    CHARACTERISTICS
    Tj=25 unless otherwise specified
    www.datasheet4u.com
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V

    VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V

    VBEsat Base-emitter saturation voltage IC=4A; IB=0.04A 2.5 V

    ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA

    IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA

    hFE-1 DC current gain IC=2A ; VCE=2V 600

    hFE-2 DC current gain IC=4A ; VCE=2V 100

    VECF Diode forward voltage IE=4A; IB=0 3.0 V

    COB Collector output capacitance f=1MHz;VCB=50V 35 pF

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD799

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions

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