Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Download as pdf or txt
Download as pdf or txt
You are on page 1of 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3229

DESCRIPTION
·With TO-220F package
·High voltage: VCEO=300V(min)

APPLICATIONS
·For color TV chroma output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (TO-220F) and symbol


3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 300 V

VCEO Collector-emitter voltage Open base 300 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 100 mA

IB Base current 20 mA

PC Collector power dissipation 2 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3229

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=10mA; IB=1m A 1.0 V

V(BR)CEO Collector-emitter breakdown voltage IC=100µA; IB=0 300 V

V(BR)EBO Emitter-base breakdown voltage IE=10µA; IC=0 7 V

hFE-1 DC current gain IC=0.5mA ; VCE=10V 20

hFE-2 DC current gain IC=20mA ; VCE=10V 30 200

ICBO Collector cut-off current VCB=240V; IE=0 1.0 µA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA

COB Output capacitance IE=0; VCB=20V;f=1MHz 4.0 pF

fT Transition frequency IE=20mA ; VCB=20V 75 MHz

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3229

PACKAGE OUTLINE

Fig.2 outline dimensions

You might also like