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    2SC116

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    The document provides specifications for the SavantIC Semiconductor 2SC1161 silicon NPN power transistor, including its applications, pinning, maximum ratings, characteristics, and package outline dimensions.

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    2SC116

    Uploaded by

    amazonaccessa
    17 views3 pages
    The document provides specifications for the SavantIC Semiconductor 2SC1161 silicon NPN power transistor, including its applications, pinning, maximum ratings, characteristics, and package outline dimensions.

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    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    The document provides specifications for the SavantIC Semiconductor 2SC1161 silicon NPN power transistor, including its applications, pinning, maximum ratings, characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    17 views3 pages

    2SC116

    Uploaded by

    amazonaccessa
    The document provides specifications for the SavantIC Semiconductor 2SC1161 silicon NPN power transistor, including its applications, pinning, maximum ratings, characteristics, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC1161

    DESCRIPTION
    ·With TO-66 package
    ·Low collector saturation voltage

    APPLICATIONS
    ·For low frequency high voltage power
    amplifier TV vertical deflection output
    applications.

    PINNING(see Fig.2)

    PIN DESCRIPTION

    1 Base

    2 Emitter

    3 Collector Fig.1 simplified outline (TO-66) and symbol

    Absolute maximum ratings(Ta=? )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 200 V

    VCEO Collector-emitter voltage Open base 120 V

    VEBO Emitter-base voltage Open collector 6 V

    IC Collector current 1 A

    PD Total power dissipation TC=25? 15 W

    Tj Junction temperature 150 ?

    Tstg Storage temperature -55~150 ?


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC1161

    CHARACTERISTICS
    Tj=25? unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

    V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

    VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.5 V

    VBE sat Base-emitter saturation voltage IC=500mA; IB=50mA 2.0 V

    ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA

    IEBO Emitter cut-off current VEB=6V; IC=0 1.0 µA

    hFE DC current gain IC=200mA ; VCE=5V 30 200

    fT Transition frequency IC=200mA ; VCE=10V 5 MHz

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC1161

    PACKAGE OUTLINE

    Fig.2 outline dimensions

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