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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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Leandro Marcon

This document provides the product specification for the SavantIC Semiconductor 2N6513 silicon NPN power transistor. It includes a description of the TO-3 package and applications for switching power supplies. Key specifications include maximum ratings for collector-base voltage up to 400V, collector current up to 7A, and power dissipation up to 120W. Electrical characteristics are also listed such as collector-emitter saturation voltage below 1V at currents of 3A and 5A.

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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Leandro Marcon
39 views3 pages
This document provides the product specification for the SavantIC Semiconductor 2N6513 silicon NPN power transistor. It includes a description of the TO-3 package and applications for switching power supplies. Key specifications include maximum ratings for collector-base voltage up to 400V, collector current up to 7A, and power dissipation up to 120W. Electrical characteristics are also listed such as collector-emitter saturation voltage below 1V at currents of 3A and 5A.

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This document provides the product specification for the SavantIC Semiconductor 2N6513 silicon NPN power transistor. It includes a description of the TO-3 package and applications for switching power supplies. Key specifications include maximum ratings for collector-base voltage up to 400V, collector current up to 7A, and power dissipation up to 120W. Electrical characteristics are also listed such as collector-emitter saturation voltage below 1V at currents of 3A and 5A.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
39 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Leandro Marcon
This document provides the product specification for the SavantIC Semiconductor 2N6513 silicon NPN power transistor. It includes a description of the TO-3 package and applications for switching power supplies. Key specifications include maximum ratings for collector-base voltage up to 400V, collector current up to 7A, and power dissipation up to 120W. Electrical characteristics are also listed such as collector-emitter saturation voltage below 1V at currents of 3A and 5A.

Copyright:

© All Rights Reserved
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6513

DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage

APPLICATIONS
·For use in switching power supply
applications and other inductive
switching circuits

PINNING

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 400 V

VCEO Collector-emitter voltage Open base 350 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 7 A

ICM Collector current-peak 14 A

PD Total power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -65~200

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-c Thermal resistance junction to case 1.25 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6513

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 350 V

VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V

VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V

VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V

VCE=400V; VBE(off)=-1.5V 0.1


ICES Collector cut-off current mA
TC=100 1.5

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=4A ; VCE=3V 10 50

fT Transition frequency IC=0.5A ; VCE=10V 3 MHz

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6513

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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