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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Djalma Mota
    This document provides product specifications for the Inchange Semiconductor 2SD998 silicon NPN power transistor. The transistor is in a TO-3PML package and is recommended for high power amplifier applications producing 45-50W of audio frequency output. It has absolute maximum ratings of 120V collector-emitter voltage, 10A collector current, and 80W collector dissipation. Key characteristics include a collector-emitter breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, DC current gain of 55-160, and transition frequency of 12MHz.

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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Djalma Mota
    43 views4 pages
    This document provides product specifications for the Inchange Semiconductor 2SD998 silicon NPN power transistor. The transistor is in a TO-3PML package and is recommended for high power amplifier applications producing 45-50W of audio frequency output. It has absolute maximum ratings of 120V collector-emitter voltage, 10A collector current, and 80W collector dissipation. Key characteristics include a collector-emitter breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, DC current gain of 55-160, and transition frequency of 12MHz.

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    Original Title

    2SD998

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    This document provides product specifications for the Inchange Semiconductor 2SD998 silicon NPN power transistor. The transistor is in a TO-3PML package and is recommended for high power amplifier applications producing 45-50W of audio frequency output. It has absolute maximum ratings of 120V collector-emitter voltage, 10A collector current, and 80W collector dissipation. Key characteristics include a collector-emitter breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, DC current gain of 55-160, and transition frequency of 12MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    43 views4 pages

    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Djalma Mota
    This document provides product specifications for the Inchange Semiconductor 2SD998 silicon NPN power transistor. The transistor is in a TO-3PML package and is recommended for high power amplifier applications producing 45-50W of audio frequency output. It has absolute maximum ratings of 120V collector-emitter voltage, 10A collector current, and 80W collector dissipation. Key characteristics include a collector-emitter breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, DC current gain of 55-160, and transition frequency of 12MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD998

    DESCRIPTION
    ・With TO-3PML package
    ・Complement to type 2SB778

    APPLICATIONS
    ・High power amplifier applications
    ・Recommended for 45~50W audio
    frequency amplifier output stage

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector
    Fig.1 simplified outline (TO-3PML) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25℃)


    SYMBOL PARAMETER CONDITIONS MAX UNIT

    VCBO Collector-base voltage Open emitter 120 V

    VCEO Collector-emitter voltage Open base 120 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 10 A

    IB Base current 1.0 A

    PC Collector dissipation TC=25℃ 80 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD998

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

    VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V

    VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.5 V

    ICBO Collector cut-off current VCB=120V; IE=0 10 μA

    IEBO Emitter cut-off current VEB=5V; IC=0 10 μA

    hFE DC current gain IC=1A ; VCE=5V 55 160

    fT Transition frequency IC=1A ; VCE=5V 12 MHz

    COB Collector output capacitance f=1MHz;VCB=10V 170 pF

    ‹ hFE Classifications
    R O

    55-110 80-160

    2
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD998

    PACKAGE OUTLINE

    Fig.2 outline dimensions

    3
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD998

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