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    heribertosfa
    This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

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    1673

    Uploaded by

    heribertosfa
    102 views3 pages
    This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

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    This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    102 views3 pages

    1673

    Uploaded by

    heribertosfa
    This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD845

    DESCRIPTION
    ·With MT-200 package
    ·Complement to type 2SB755
    ·High transition frequency
    ·High breakdown voltage :VCEO=150V(min)

    APPLICATIONS
    ·For power amplifier applications

    PINNING(see Fig.2)

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (MT-200) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 150 V

    VCEO Collector-emitter voltage Open base 150 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 12 A

    IB Base current 1.2 A

    PC Collector power dissipation TC=25 120 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD845

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V

    V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V

    VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V

    VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V

    ICBO Collector cut-off current VCB=150V; IE=0 -50 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 -50 µA

    hFE DC current gain IC=1A ; VCE=5V 55 160

    fT Transition frequency IC=1A ; VCE=10V 20 MHz

    hFE classifications

    R O

    55-110 80-160

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD845

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

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