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VS-15ETH06S-M3, VS-15ETH06-1-M3 Hyperfast Rectifier, 15 A FRED PT

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VS-15ETH06S-M3, VS-15ETH06-1-M3

www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
2
1 • 175 °C operating junction temperature
3
1 • Single die center tap module
2
D2PAK (TO-263AB) 3 TO-262AA • Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Base
cathode • Material categorization: for definitions of compliance
2 please see www.vishay.com/doc?99912
2

DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
1 3 1 3
optimized performance of forward voltage drop, hyperfast
N/C Anode N/C Anode recovery time, and soft recovery.
VS-15ETH06S-M3 VS-15ETH06-1-M3 The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
PRIMARY CHARACTERISTICS reliability characteristics.
IF(AV) 15 A These devices are intended for use in PFC boost stage in the
VR 600 V AC/DC section of SMPS, inverters or as freewheeling
VF at IF 1.3 V
diodes.
The extremely optimized stored charge and low recovery
trr (typ.) 22 ns
current minimize the switching losses and reduce over
TJ max. 175 °C dissipation in the switching element and snubbers.
Package D2PAK (TO-263AB), TO-262AA
Circuit configuration Single

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current IF(AV) TC = 140 °C 15
Non-repetitive peak surge current IFSM TJ = 25 °C 120 A
Peak repetitive forward current IFM 30
Operating junction and storage temperatures TJ, TStg -65 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, VBR,
IR = 100 μA 600 - -
blocking voltage VR
V
IF = 15 A - 1.8 2.2
Forward voltage VF
IF = 15 A, TJ = 150 °C - 1.3 1.6
VR = VR rated - 0.2 50
Reverse leakage current IR μA
TJ = 150 °C, VR = VR rated - 30 500
Junction capacitance CT VR = 600 V - 20 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH

Revision: 21-Dec-2021 1 Document Number: 96301


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VS-15ETH06S-M3, VS-15ETH06-1-M3
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 22 30
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 28 35
Reverse recovery time trr ns
TJ = 25 °C - 29 -
TJ = 125 °C - 75 -
TJ = 25 °C IF = 15 A - 3.5 -
Peak recovery current IRRM dIF/dt = 200 A/μs A
TJ = 125 °C VR = 390 V - 7 -
TJ = 25 °C - 57 -
Reverse recovery charge Qrr μC
TJ = 125 °C - 300 -
Reverse recovery time trr - 51 - ns
IF = 15 A
Peak recovery current IRRM TJ = 125 °C dIF/dt = 800 A/μs - 20 - A
VR = 390 V
Reverse recovery charge Qrr - 580 - nC

THERMAL - MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
TJ, TStg -65 - 175 °C
temperature range
Thermal resistance,
RthJC - 1.0 1.3
junction to case per leg
Thermal resistance,
RthJA Typical socket mount - - 70 °C/W
junction to ambient per leg
Thermal resistance,
RthCS Mounting surface, flat, smooth, and greased - 0.5 -
case to heatsink
- 2.0 - g
Weight
- 0.07 - oz.
6.0 12 kgf · cm
Mounting torque -
(5.0) (10) (lbf · in)
Case style D2PAK (TO-263AB) 15ETH06S
Marking device
Case style TO-262AA 15ETH06-1
IF - Instantaneous ForwardCurrent (A)

100 1000
TJ = 175 °C
100
IR - Reverse Current (µA)

TJ = 150 °C
10 TJ = 125 °C
TJ = 175 °C
1
TJ = 150 °C TJ = 100 °C
10
TJ = 25 °C 0.1

0.01 TJ = 25 °C

0.001

1 0
0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600

VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 21-Dec-2021 2 Document Number: 96301


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06S-M3, VS-15ETH06-1-M3
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Vishay Semiconductors

1000

CT - Junction Capacitance (pF) 100

TJ = 25 °C

10
0 100 200 300 400 500 600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
ZthJC - Thermal Impedance (°C/W)

PDM

D = 0.50 t1
D = 0.20
0.1 D = 0.10 t2
D = 0.05
D = 0.02 Notes:
Single pulse D = 0.01 1. Duty factor D = t1/t2 .
(thermal resistance) 2. Peak TJ = PDM x ZthJC + TC
.
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

180 35
Allowable Case Temperature (°C)

170 30
Average Power Loss (W)

RMS Limit
160 DC 25

150 20 D = 0.01
D = 0.02
140 15 D = 0.05
Square wave (D = 0.50) D = 0.10
130 10
80 % rated VR applied D = 0.20
DC D = 0.50
120 5
See note (1)
110 0
0 5 10 15 20 25 0 5 10 15 20 25

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current
Note
(1) Formula used: T = T - (Pd + Pd
C J REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR

Revision: 21-Dec-2021 3 Document Number: 96301


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06S-M3, VS-15ETH06-1-M3
www.vishay.com
Vishay Semiconductors

100 1000
IF = 30 A VR = 390 V
IF = 15 A TJ = 125 °C
80 800 TJ = 25 °C
IF = 30 A
IF = 15 A
60 600

Qrr (nC)
trr (ns)

40 400

20 VR = 390 V 200
TJ = 125 °C
TJ = 25 °C
0 0
100 1000 100 1000

dIF/dt (A/µs) dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt

(3)
trr
IF
ta tb
0

(4)
Qrr
(2)
IRRM 0.5 IRRM

di(rec)M/dt (5)

0.75 IRRM

(1) diF/dt

(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr
through zero crossing and IRRM

trr x IRRM
(2) IRRM - peak reverse recovery current Qrr =
2
(3) trr - reverse recovery time measured
(5) di(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.

Fig. 9 - Reverse Recovery Waveform and Definitions

Revision: 21-Dec-2021 4 Document Number: 96301


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETH06S-M3, VS-15ETH06-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE

Device code VS- 15 E T H 06 S TRL -M3

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product


2 - Current rating (15 A)
3 - E = single diode
4 - T = TO-220, D2PAK (TO-263AB)
5 - H = hyperfast rectifier
6 - Voltage rating (06 = 600 V)
7 - S = D2PAK (TO-263AB)
-1 = TO-262AA
8 - None = tube (50 pieces)
TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package)
TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package)
9 - Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)


PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION
VS-15ETH06S-M3 50 Antistatic plastic tubes
VS-15ETH06STRR-M3 800 13" diameter plastic tape and reel
VS-15ETH06STRL-M3 800 13" diameter plastic tape and reel
VS-15ETH06-1-M3 50 Antistatic plastic tubes

LINKS TO RELATED DOCUMENTS


D2PAK (TO-263AB) www.vishay.com/doc?96164
Dimensions
TO-262 www.vishay.com/doc?96165
D2PAK (TO-263AB) www.vishay.com/doc?95444
Part marking information
TO-262 www.vishay.com/doc?95443
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?96617

Revision: 21-Dec-2021 5 Document Number: 96301


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches

Conforms to JEDEC® outline D2 PAK (SMD-220) B


A Pad layout
(2)(3) A (E)
c2 11.00
E MIN.
(0.43)
A
(3) L1 4
9.65
MIN.
(D1) (3) (0.38)

Detail A
D 17.90 (0.70)
H 15.00 (0.625)
(2)
1 2 3
3.81
MIN.
L2 (0.15)
B B 2.32
MIN.
(0.08)
A
2.64 (0.103)
2 x b2 C E1 (3) 2.41 (0.096)
c
2xb View A - A
0.010 M A M B ± 0.004 M B
2x e
Base
Plating (4) Metal
H b1, b3
Gauge
plane
(c) c1 (4)
0° to 8° B
L Seating
plane
L3 A1
(b, b2)
Lead tip
L4 Section B - B and C - C
Detail “A” Scale: None
Rotated 90 °CW
Scale: 8:1

MILLIMETERS INCHES MILLIMETERS INCHES


SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB

Revision: 13-Jul-17 1 Document Number: 96164


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-262AA
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3) A B
E A c2 E
A
(3) L1
Seating
D1 (3)
plane
D

1 2 3
C C
L2

B B L (2)

A
c E1 (3)
3 x b2
3xb A1
Section A - A
2xe
(4) Base
Plating metal
0.010 M A M B b1, b3
Lead assignments
c c1
Diodes (4)
1. - Anode (two die)/open (one die)
2., 4. - Cathode (b, b2)
3. - Anode
Lead tip Section B - B and C - C
Scale: None

MILLIMETERS INCHES
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.),
L1 (max.), L2 (min., max.)

Revision: 30-Nov-17 1 Document Number: 96165


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.

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Revision: 01-Jan-2022 1 Document Number: 91000

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