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VS-E4TU2006FP-N3

www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 20 A FRED Pt®
FEATURES
• Low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
1 • Low leakage current
2 • Fully isolated package (VINS = 2500 VRMS)
TO-220 FullPAK 2L • Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1 2
Cathode Anode DESCRIPTION
Ultralow VF, soft-switching ultrafast rectifiers optimized for
LINKS TO ADDITIONAL RESOURCES Discontinuous (Critical) Mode (DCM) Power Factor
3D 3D
Correction (PFC).
3D Models The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
PRIMARY CHARACTERISTICS snubbers.
IF(AV) 20 A The device is also intended for use as a freewheeling diode
VR 600 V in power supplies and other power switching applications.
VF at IF 1.26 V
APPLICATIONS
trr (typ.) 61 ns
AC/DC SMPS 70 W to 400 W
TJ max. 175 °C
e.g. laptop and printer AC adaptors, desktop PC, TV and
Package TO-220 FullPAK 2L
monitor, games units and DVD AC/DC power supplies.
Circuit configuration Single
MECHANICAL DATA
Case: TO-220 FullPAK 2L
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current in DC IF(AV) TC = 102 °C 20
A
Non-repetitive peak surge current IFSM TJ = 25 °C 190
Operating junction and storage temperatures TJ, TStg -55 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 - -
IF = 20 A - 1.4 1.63 V
Forward voltage VF
IF = 20 A, TJ = 125 °C - 1.26 1.49
VR = VR rated - 0.3 15
Reverse leakage current IR μA
TJ = 125 °C, VR = VR rated - 50 500
Junction capacitance CT VR = 600 V - 18 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH

Revision: 09-Feb-2021 1 Document Number: 96422


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E4TU2006FP-N3
www.vishay.com
Vishay Semiconductors

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
TJ = 25 °C - 61 - ns
Reverse recovery time trr
TJ = 125 °C - 87 -
IF = 20 A
TJ = 25 °C - 13 -
Peak recovery current IRRM dIF/dt = 1000 A/μs A
TJ = 125 °C - 21 -
VR = 400 V
TJ = 25 °C - 480 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 1080 -

THERMAL - MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
TJ, TStg -55 - 175 °C
temperature range
Thermal resistance, junction to case RthJC - 2.5 3
Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 °C/W
Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 -
- 2 - g
Weight
- 0.07 - oz.
6 12 kgf · cm
Mounting torque -
(5) (10) (lbf · in)
Marking device Case style: 2L TO-220 FullPAK E4TU2006FP
IF - Instantaneous Forward Current (A)

1000 1000
175 °C

100
IR - Reverse Current (µA)

150 °C

100 10
125 °C

TJ = 175 °C 1

25 °C
10 0.1

TJ = 125 °C 0.01
TJ = 25 °C

1 0.001
0.3 0.8 1.3 1.8 2.3 2.8 3.3 0 100 200 300 400 500 600

VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 09-Feb-2021 2 Document Number: 96422


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E4TU2006FP-N3
www.vishay.com
Vishay Semiconductors

1000

CT - Junction Capacitance (pF)


100

10
0 100 200 300 400 500 600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

0.50
0.20
0.1 DC 0.10
0.05
0.02 Single Pulse
0.01 (Thermal Resistance)

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

180 50
Allowable Case Temperature (°C)

45
160
Average Power Loss (W)

40 RMS limit

35
140
30
120 DC 25
20 D = 0.02
D = 0.05
100
15 D = 0.10
D = 0.20
Square wave (D = 0.50) 10 D = 0.50
80
rated VR applied DC
5
60 0
0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current

Revision: 09-Feb-2021 3 Document Number: 96422


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E4TU2006FP-N3
www.vishay.com
Vishay Semiconductors

170 1200
160 VR = 400 V
VR = 400 V
150 1000
140
130 800
120 IF = 20 A

Qrr (nC)
trr (ns)

110 TJ = 125°C IF = 20 A
600
100 TJ = 125°C
90
80 400
70
IF = 20 A IF = 20 A
60 200
TJ = 25°C TJ = 25°C
50
40 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dIF/dt (A/µs) dIF/dt (A/µs)


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt

25

IF = 20 A
20 TJ = 125 °C

15 VR = 400 V
Irr (A)

10

IF = 20 A
5 TJ = 25 °C

0
0 200 400 600 800 1000

dIF/dt (A/µs)

Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt

(3)
trr
IF
ta tb
0

(4)
Qrr
(2)
IRRM 0.5 IRRM

di(rec)M/dt (5)

0.75 IRRM

(1) diF/dt

(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr
through zero crossing and IRRM

trr x IRRM
(2) IRRM - peak reverse recovery current Qrr =
2
(3) trr - reverse recovery time measured
(5) di(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Fig. 10 - Reverse Recovery Waveform and Definitions

Revision: 09-Feb-2021 4 Document Number: 96422


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E4TU2006FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE

Device code VS- E 4 T U 20 06 FP -N3

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product


2 - Circuit configuration:
E = single diode
3 - 4 = Gen 4 FRED Pt
4 - T = TO-220
5 - U = ultrafast recovery time
6 - Current code: 20 = 20 A
7 - Voltage code: 06 = 600 V
8 - FP = FullPAK
9 - Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free

ORDERING INFORMATION (Example)


PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-E4TU2006FP-N3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?96157
Part marking information www.vishay.com/doc?95392
SPICE model www.vishay.com/doc?96822

Revision: 09-Feb-2021 5 Document Number: 96422


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters

3.40
10.6 Hole Ø 3.10
2.80
10.0 2.44
3.7
3.2 7.31
6.50
16.0
15.8

Mold flash bleeding 3.3


3.1
Exposed Cu
13.56
12.90

0.61
0.38 2.85
0.9 2.65 1.30
0.7 1.20 1.05
2.54 TYP. 1.47
2.54 TYP.

Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6

5° ± 0.5° 5° ± 0.5°

Revision: 06-Jul-17 1 Document Number: 96157


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2023 1 Document Number: 91000

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