DISCRETE SEMICONDUCTORS

DATA SHEET

BYV44 series
Dual rectifier diodes
ultrafast
Product specification October 1998
NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 300 V/ 400 V/ 500 V
• Fast switching
a1 a2
• Soft recovery characteristic
1 3
VF ≤ 1.12 V
• High thermal cycling performance
• Low thermal resistance IO(AV) = 30 A
k 2
trr ≤ 60 ns

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

Dual, common cathode, ultra-fast, PIN DESCRIPTION
tab
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 anode 1
frequency switched mode power
supplies. 2 cathode
The BYV44 series is supplied in the 3 anode 2
conventional leaded SOT78
(TO220AB) package. tab cathode
1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV44 -300 -400 -500
VRRM Peak repetitive reverse voltage - 300 400 500 V
VRWM Crest working reverse voltage - 300 400 500 V
VR Continuous reverse voltage Tmb ≤ 136˚C - 300 400 500 V
IO(AV) Average rectified output current square wave; δ = 0.5; - 30 A
(both diodes conducting)1 Tmb ≤ 94 ˚C
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 94 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current per diode. t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C
Tj Operating junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to per diode - - 2.4 K/W
heatsink both diodes conducting - - 1.4 K/W
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient

1 Neglecting switching and reverse current losses.

For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab.

October 1998 1 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 15 A; Tj = 150˚C - 0.95 1.12 V
IF = 15 A - 1.08 1.25 V
IF = 30 A - 1.15 1.36 V
IR Reverse current VR = VRRM - 10 50 µA
VR = VRRM; Tj = 100 ˚C - 0.3 0.8 mA
Qs Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/µs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.2 5.2 A
dIF/dt = 50 A/µs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V

PF / W BYV44 Tmb(max) / C
dI 30 88
I F Vo = 0.8900 V
F Rs = 0.0137 Ohms D = 1.0
dt
25 90

t 0.5
rr 20 102

time 0.2
15 114
0.1

10 tp tp 126
I D=
Q 10% 100% T
s
5 138
I t
I T
R
rrm 0 150
0 5 10 15 20 25
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square wave where IF(AV) =IF(RMS) x √D.

I PF / W BYV44 Tmb(max) / C
F 20 102
Vo = 0.89 a = 1.57
Rs = 0.0137
1.9

15 2.2 114
2.8

time 4
10 126
VF

5 138
V
fr
VF
0 150
0 5 10 15
time IF(AV) / A
Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).

October 1998 2 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

trr / ns Qs / nC
1000 1000

IF=20 A
IF = 20 A
100 100
1A

2A
10 10

Tj = 25 C
Tj = 100 C

1 1
1 10 100 1.0 10 100
dIF/dt (A/us) -dIF/dt (A/us)

Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode Fig.8. Maximum Qs at Tj = 25˚C; per diode

Irrm / A Transient thermal impedance, Zth j-mb (K/W)

10 10

1
IF= 20 A
1

IF=1A
0.1

0.1
0.01 PD tp tp
D=
T
Tj = 25 C
Tj = 100 C t
T
0.01 0.001
1 10 100 1us 10us 100us 1ms 10ms 100ms 1s 10s
-dIF/dt (A/us) pulse width, tp (s) BYV42E

Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per Fig.9. Transient thermal impedance per diode
diode Zth j-mb= f(tp)

IF / A BYV74
50
Tj = 25 C
Tj = 150 C
40

30

typ max
20

10

0
0 0.5 1 1.5 2
VF / V

Fig.7. Typical and maximum forward characteristic

IF = f(VF); parameter Tj

October 1998 3 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

October 1998 4 Rev 1.400

NXP Semiconductors

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