RHRP3060 30A, 600V Hyperfast Diodes

April 2005

RHRP3060
30A, 600V Hyperfast Diodes
Features Description
• Hyperfast with Soft Recovery ........................ <40ns The RHRP3060 are hypersast diodes with soft recovery charac-
teristics (trr < 40ns). They have half the recovery time of ultrafast
• Operating Temperature .................................. 175°C
diodes and are of silicon nitride passivated ion-implanted epi-
• Reverse Voltage Up To ..................................600V taxial planar construction.
• Avalanche Energy Rated These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
• Planar Construction
and other power switching applications. Their low stored charge
and hyperfast soft recovery minimize ringing and electrical
Applications noise in many power switching circuits, thus reducing power
• Switching Power Supplies loss in the switching transistors.

• Power Switching Circuits Formerly developmental type TA49063.

• General Purpose

Ordering Informations
Part Number Package Brand
RHRP3060 TO-220AC RHRP3060
Note: When opdering, use the entire part number.

Packaging Symbol

CATHODE A
JEDEC TO-220AC
ANODE

Absolute Maximum Ratings

Symbol Parameter RHRP3060 Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 120°C) 30 A
IFRM Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A
IFSM Nonrepetitive Peak Surge Current 325 A
(Halfwave, 1 Phase, 60Hz)
PD Maximum Power Dissipation 125 W
EAVL Avalanche Energy (See Figures 10 and 11) 20 mJ
TJ, TSTG Operating and Storage Temperature -65 to 175 °C

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

RHRP3060 Rev. C
 RHRP3060 30A, 600V Hyperfast Diodes
Electrical Characteristics TC = 25°C unless otherwise noted

RHRP3060
Symbol Test Conditions Units
Min. Typ. Max.
VF IF = 30A - - 2.1 V
IF = 30A, TC = 150°C - - 1.7 V
IR VR = 400V - - - µA
VR = 600V - - 250 µA
VR = 400V, TC = 150°C - - - mA
VR = 600V, TC = 150°C - - 1.0 mA
trr IF = 1A, dlF/dt = 200A/µs - - 40 ns
IF = 30A, dlF/dt = 200A/µs - - 45 ns
ta IF = 30A, dlF/dt = 200A/µs - 22 - ns
tb IF = 30A, dlF/dt = 200A/µs - 18 - ns
QRR IF = 30A, dlF/dt = 200A/µs - 100 - nC
CJ VR = 600V, IF = 0A - 85 - pF
RθJC - - 1.2 °C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%)
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.

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RHRP3060 Rev. C
 RHRP3060 30A, 600V Hyperfast Diodes
Typical Performance Characteristics
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Currnt vs Reverse Voltage

175°C

100°C
100°C

175°C

25°C

Figure 3. trr, ta and tb Curves vs Figure 4. trr, ta and tb Curves vs

Forward Current Forward Current

TC = 25°C, dlF/dt = 200A/µs TC = 100°C, dlF/dt = 200A/µs

trr
trr

ta ta

tb tb

Figure 5. trr, ta and tb Curves vs Figure 6. Current Derating Curve

Forward Current

TC = 175°C, dlF/dt = 200A/µs

trr
SQ.WAVE

ta

tb

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RHRP3060 Rev. C
 RHRP3060 30A, 600V Hyperfast Diodes
Typical Performance Characteristics (Continued)

Figure 7. Junction Capacitance vs

Reverse Voltage

Test Circuit and Waveforms

Figure 8. trr Test Circuit Figure 9. trr Waveforms and Definitions

VGE AMPLITUDE AND

RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF
dIF trr
IF
DUT CURRENT dt ta tb
RG SENSE
+
0

VGE VDD
t1 IGBT - 0.25 IRM
IRM
t2

Figure 10. Avalanche Energy Test Circuit Figure 11. Avalanche Current and Voltage
Waveforms
I = 1A
L = 40mH
R < 0.1Ω VAVL
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L R
IL IL
CURRENT +
I V
SENSE VDD
Q1
VDD
t0 t1 t2 t
DUT -

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RHRP3060 Rev. C
 RHRP3060 30A, 600V Hyperfast Diodes
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™ FAST® IntelliMAX™ POP™ SPM™
ActiveArray™ FASTr™ ISOPLANAR™ Power247™ Stealth™
Bottomless™ FPS™ LittleFET™ PowerEdge™ SuperFET™
CoolFET™ FRFET™ MICROCOUPLER™ PowerSaver™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ MicroFET™ PowerTrench® SuperSOT™-6
DOME™ GTO™ MicroPak™ QFET® SuperSOT™-8
EcoSPARK™ HiSeC™ MICROWIRE™ QS™ SyncFET™
E2CMOS™ I2C™ MSX™ QT Optoelectronics™ TinyLogic®
EnSigna™ i-Lo™ MSXPro™ Quiet Series™ TINYOPTO™
FACT™ ImpliedDisconnect™ OCX™ RapidConfigure™ TruTranslation™
FACT Quiet Series™ OCXPro™ RapidConnect™ UHC™
OPTOLOGIC® µSerDes™ UltraFET®
Across the board. Around the world.™
OPTOPLANAR™ SILENT SWITCHER® UniFET™
The Power Franchise®
PACMAN™ SMART START™ VCX™
Programmable Active Droop™

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or sustain life, or (c) whose failure to perform when properly used to cause the failure of the life support device or system, or to
in accordance with instructions for use provided in the labeling, affect its safety or effectiveness.
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I15

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RHRP3060 Rev. C
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