RHRP30120

Data Sheet November 2013

30 A, 1200 V, Hyperfast Diode Features

• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
The RHRP30120 is a hyperfast diode with soft recovery
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted • 1200 V Reverse Voltage and High Reliability
epitaxial planar construction. These devices are
• Avalanche Energy Rated
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and • RoHS Compliant
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing Applications
and electrical noise in many power switching circuits
reducing power loss in the switching transistors. • Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER PACKAGE BRAND
Packaging
JEDEC TO-220AC
RHRP30120 TO-220AC RHR30120
ANODE
NOTE: When ordering, use the entire part number. CATHODE
CATHODE
(FLANGE)
Symbol
K

Absolute Maximum Ratings TC = 2 5 oC

RHRP30120 UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 30 A
(TC = 78oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 60 A
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 300 A
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 30 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC

©2001 Fairchild Semiconductor Corporation

RHRP30120 Rev. C1 1 www.fairchildsemi.com
 RHRP30120

Electrical Specifications TC = 25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNIT

VF IF = 30 A - - 3.2 V
IF = 3 0 A , T C = 1 5 0 oC - - 2.6 V

IR VR = 1200 V - - 250 µA
VR = 1200 V, TC = 1 5 0 oC - - 1 mA

trr IF = 1 A , d i F/dt = 100 A/µs - - 65 ns

IF = 3 0 A , d i F/dt = 100 A/µs - - 85 ns

ta IF = 3 0 A , d i F/dt = 100 A/µs - 48 - ns

tb IF = 3 0 A , d i F/dt = 100 A/µs - 22 - ns

RθJC - - 1.2 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time (See Figure 6), summation of ta + t b.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R θJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.

Typical Performance Curves

200 500

100 100 175 oC

IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)

10

1.0 100 oC
175oC
10
100 oC 0.1

25oC 0.01
25 oC

1 0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 200 400 600 800 1000 1200
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

©2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

RHRP30120 Rev. C1
 RHRP30120

Typical Performance Curves (Continued)

100 40

IF(AV), AVERAGE FORWARD CURRENT (A)

75 30
DC
t, TIME (ns)

t rr
50 20
SQ. WAVE
ta

25 10

tb

0 0
1 10 30 25 50 75 100 125 150 175
IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE (oC)

FIGURE 3. trr, ta AND t b CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE

Test Circuits and Waveforms

VGE AMPLITUDE AND
RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF

DUT CURRENT dIF trr

RG SENSE IF
+ dt ta tb
VGE VDD 0
t1 IGBT -
0.25 IRM
t2
IRM

FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS

I MAX = 1.225A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
VAVL
Q1 = IGBT (BVCES > DUT VR(AVL))
L R

CURRENT +
VDD IL IL
SENSE
Q1 I V
VDD
DUT -
t0 t1 t2 t

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS

©2001 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

RHRP30120 Rev. C1
 RHRP30120 — Hyperfast Diode
Mechanical Dimensions

Figure 9. TO-220 2L - TO-220, MOLDED, 2LD

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©2001 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

RHRP30120 Rev. C1
 RHRP30120 — Hyperfast Diode
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Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

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Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2001 Fairchild Semiconductor Corporation

RHRP30120 Rev. C1 5 www.fairchildsemi.com