RHRP840, RHRP850,

S E M I C O N D U C T O R
RHRP860
April 1995 8A, 400V - 600V Hyperfast Diodes

Features Package
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns JEDEC TO-220AC
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175 C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
ANODE
• Avalanche Energy Rated
CATHODE
• Planar Construction CATHODE
(FLANGE)

Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Description Symbol
RHRP840, RHRP850 and RHRP860 (TA49059) are hyper-
fast diodes with soft recovery characteristics (tRR < 30ns).
They have half the recovery time of ultrafast diodes and are K
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY A

PART NUMBER PACKAGE BRAND

RHRP840 TO-220AC RHRP840
RHRP850 TO-220AC RHRP850
RHRP860 TO-220AC RHRP860
NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

RHRP840 RHRP850 RHRP860 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400 500 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 400 500 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 400 500 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 8 8 8 A
(TC = +150oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 16 16 16 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 100 100 100 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 75 W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 20 20 mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG , TJ -65 to +175 -65 to +175 -65 to +175 oC

Copyright © Harris Corporation 1995 File Number 3668.1

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 Specifications RHRP840, RHRP850, RHRP860

Electrical Specifications TC = +25oC, Unless Otherwise Specified

RHRP840 RHRP850 RHRP860

SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 8A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V
o
IF = 8A, TC = +150 C - - 1.7 - - 1.7 - - 1.7 V
IR VR = 400V, TC = +25 C o
- - 100 - - - - - - µA
VR = 500V, TC = +25 C o
- - - - - 100 - - - µA
VR = 600V, TC = +25oC - - - - - - - - 100 µA
IR VR = 400V, TC = +150oC - - 500 - - - - - - µA
VR = 500V, TC = +150oC - - - - - 500 - - - µA
VR = 600V, TC = +150oC - - - - - - - - 500 µA
tRR IF = 1A, dIF /dt = 100A/µs - - 30 - - 30 - - 30 ns
IF = 8A, dIF /dt = 100A/µs - - 35 - - 35 - - 35 ns
tA IF = 8A, dIF /dt = 100A/µs - 16 - - 16 - - 16 - ns
tB IF = 8A, dIF /dt = 100A/µs - 11 - - 11 - - 11 - ns
QRR IF = 8A, dIF /dt = 100A/µs - 26 - - 26 - - 26 - nC
CJ VR = 10V, IF = 0A - 25 - - 25 - - 25 - pF
RθJC - - 2 - - 2 - - 2 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB .
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figure 10 and Figure 11).
pw = Pulse width.
D = Duty cycle.

V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF /dt
L1 = SELF INDUCTANCE OF
+V3
R4 + LLOOP
Q2 t1 ≥ 5tA(MAX)
R1 t2 > tRR
dIF tRR
Q1 t3 > 0 IF
L1 t dt
tA tB
+V1 ≤ A(MIN)
R4 10 0
0
t2 L LOOP
0.25 IRM
R2
t1 IRM
Q4 DUT

t3
C1 R4 VR
0
Q3 VRM
-V2 R3 -V4

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

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 RHRP840, RHRP850, RHRP860

Typical Performance Curves

40 1000
+175oC

IR , REVERSE CURRENT (µA)

IF , FORWARD CURRENT (A)

100

10
10 +100oC

+175oC +100oC +25oC 1

0.1 +25oC
1

0.5 0.01
0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 600

VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE DROP VOLTAGE

TC = +25oC TC = +100oC
40 75

60
t, RECOVERY TIMES (ns)

t, RECOVERY TIMES (ns)

30
tRR
tRR
45
20
tA 30
tB
tB
10 tA
15

0 0
0.5 1 4 8 0.5 1 4 8

IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A)

FIGURE 5. TYPICAL tRR , tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR , tA AND tB CURVES vs FORWARD
CURRENT AT +25oC CURRENT AT +100oC

TC = +175oC
150 10
IF(AV) , AVERAGE FORWARD CURRENT (A)

125 8
t , RECOVERY TIMES (ns)

100 tRR DC
6
SQ. WAVE
75
tB
4
50
tA
2
25

0 0
0.5 1 4 8 125 135 145 155 165 175

IF , FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)

FIGURE 7. TYPICAL tRR , tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
CURRENT AT +175oC

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 RHRP840, RHRP850, RHRP860

Typical Performance Curves (Continued)

60

CJ , JUNCTION CAPACITANCE (pF)

50

40

30

20

10

0
0 50 100 150 200
VR , REVERSE VOLTAGE (V)

FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE

IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETS
R
L VAVL
Q1

+
IL
130Ω 1MΩ
I V
DUT
VDD
12V Q2
t0 t1 t2 t
CURRENT -
SENSE
130Ω

12V
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS

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