FFAF60UA60DN — Ultrafast ll Dual Diode

November 2014

FFAF60UA60DN
60 A, 600 V, UItrafast II Dual Diode
Features Description
• Ultrafast Recovery, Trr < 90ns (@ IF = 30 A) The FFAF60UA60DN is an ultrafast ll dual diode with low forward
voltage drop and rugged UIS capability. This device is intended
• Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
for use as freewheeling and clamping diodes in a variety of
• 600V Reverse Voltage and High Reliability switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
• Avalanche Energy Rated
industrial application as welder and UPS application.
• RoHS Compliant

Applications
• Boost Diode in PFC and SMPS
• Welder, UPS and Motor Control Application

Pin Assignments

1 2 3
1. Anode 2. Cathode 3. Anode

Absolute Maximum Ratings Per leg at TC = 25oC unless otherwise noted

Symbol Parameter Ratings Unit
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 45oC 30 A
Non-repetitive Peak Surge Current
IFSM 180 A
60Hz Single Half-Sine Wave
TJ, TSTG o
Operating and Storage Temperature Range -65 to +175 C

Thermal Characteristics Per leg at TC = 25oC unless otherwise noted

Symbol Parameter Ratings Unit
o
RJC Maximum Thermal Resistance, Junction to Case 2.4 C/W

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFAF60UA60DN F60UA60DN TO-3PF Tube N/A N/A 30

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FFAF60UA60DN Rev.C2
 FFAF60UA60DN — Ultrafast ll Dual Diode
Electrical Characteristics Per leg at TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Unit
IF = 30 A TC = 25oC - - 2.2
VFM1 V
IF = 30 A TC = 125oC - - 2.0
VR = 600 V TC = 25oC - - 100
IRM1 A
VR = 600 V TC = 125oC - - 150
trr - - 90 ns
Irr IF = 30 A, diF/dt = 200 A/s TC = 25oC - - 8 A
Qrr - - 360 nC
WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ
Notes:
1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%

Test Circuit and Waveforms

Figure 1. Diode Reverse Recovery Test Circuit & Waveform

Figure 2. Unclamped Inductive Switching Test Circuit & Waveform

©2009 Fairchild Semiconductor Corporation

2 www.fairchildsemi.com
FFAF60UA60DN Rev.C2
 FFAF60UA60DN — Ultrafast ll Dual Diode
Typical Performance Characteristics

Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current vs.
vs. Forward Current Reverse Voltage
100 10

o
TC = 125 C
o
TC = 125 C

Reverse Current , IR [A]

Forward Current, IF [A]

10 1
o
TC = 25 C TC = 75 C
o

o
TC = 75 C
1 0.1
o
TC = 25 C

0.1 0.01
0.0 0.5 1.0 1.5 2.0 100 200 300 400 500 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 5.Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time

vs. diF/dt
150
200 IF = 30A o
Typical Capacitance
TC = 125 C
Reverse Recovery Time, trr [ns]

at 0V = 205pF
120
Capacitances , Cj [pF]

150
o
90 TC = 75 C

100
60
o
TC = 25 C
50
30

0 0
0.1 1 10 100 100 200 300 400
Reverse Voltage, VR [V] diF/dt [A/s]

Figure 7. Typical Reverse Recovery Figure 8. Forward Current Derating Curve

Current vs. diF/dt
12 40
Average Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]

o
TC = 125 C
9 30

o
TC = 75 C

6 20

o
TC = 25 C

3 10

IF = 30A
0 0
100 200 300 400 25 50 75 100 125 150
o
diF/dt [A/s] Case temperature, TC [ C]

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

3
FFAF60UA60DN Rev.C2
 FFAF60UA60DN — Ultrafast ll Dual Diode
Package Dimensions

Figure 9. TO-3PF 3L - TO3PF, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF3PF-003.

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

4
FFAF60UA60DN Rev.C2
 FFAF60UA60DN — Ultrafast ll Dual Diode
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®
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®
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I71

©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FFAF60UA60DN Rev.C2