ABS202 THRU ABS210

Single Phase 2.0 AMP. Glass Passivated Bridge Rectifiers

VOLTAGE RANGE
Thin Mini-Dip 200 to 1000 Volts
CURRENT
2.0 Ampere

Features ABS
— Glass passivated junction
— Ideal for printed circuit board
— Reliable low cost construction utilizing

0.177(4.5)
0.169(4.3)
0.252(6.4)
0.236(6.0)

0.010(0.25)
0.006(0.15)
0.006(0.15)
0.002(0.05)
molded plastic technique
— High temperature soldering guaranteed:

0~10 O
0.059(1.5)

260℃ / 10 seconds / 0.375” ( 9.5mm ) 0.174(4.4)

0.008(0.2)

-----
lead length at 5 lbs., ( 2.3 kg ) tension 0.150(3.8)
DETAIL "A", SCALE=20/1

0.059(1.50) MAX.
— Small size, simple installation

0.056(1.42)
0.048(1.22)
A
0.006(0.15)
0.002(0.05)

Leads solderable per MIL-STD-202,

0.21(5.4)
0.193(4.9)

Method 208
— High surge current capability 0.033(0.85)
0.022(0.55)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol ABS202 ABS204 ABS206 ABS208 ABS210 Units
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B. I(AV) 2.0 A
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated IFSM 48 A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage VF 0.95 V
@ 1.0A
Maximum DC Reverse Current @ TA=25℃ IR 5 uA
at Rated DC Blocking Voltage
Typical Thermal resistance Junction to Lead RθJL 18 ℃/W
On aluminum substrate 57.5
RθJA
On Glass-Epoxy substrate 80
Operating Temperature Range TJ -55 to +150 ℃
Storage Temperature Range TSTG -55 to +150 ℃

m
m
 RATINGS AND CHARACTERISTIC CURVES (ABS202 THRU ABS210)

FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG.2- TYPICAL REVERSE CHARACTERISTICS

CURVE PER BRIDGE ELEMENT
3.2 100

2.8
AVERAGE FORWARD CURRENT. (A)

INSTANTANEOUS REVERSE CURRENT. ( A)

2.4 ALUMINA SUBSTRATE
SIN 50.8mm X 50.8mm 10
2.0 SOLDERING LAND 1mm X 1mm
Tj=100 0C
CONDUCTOR LAYER 20 mm
SUBSTRATE THICKNESS 0.64mm
1.6

1.2 1 Tj=75 0C

0.8

0.4
0.1
0 Tj=25 0C
0 20 40 60 80 100 120 140 160
O
AMBIENT TEMPERATURE. ( C)

0.01
FIG.3- MAXIMUM NON-REPETITIVE FORWARD 0 20 40 60 80 100 120 140
SURGE CURRENT PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
56
PEAK FORWARD SURGE CURRENT. (A)

48 FIG.4- TYPICAL JUNCTION CAPACITANCE

1000
40
600
JUNCTION CAPACITANCE.(pF)

32
IFSM
500
24
Tj=25 0C
10ms 10ms
1 Cycle 400
16 Ta=40 C
NON-REPETITIVE,
Single Half Sine-Wave
SINE(JEDEC
WAVE, Method) 300
8 Tj = 25OC BEFORE
SURGE CURRENT IS APPLIED
0 200
1 10 100
NUMBER OF CYCLES (CYCLE)
100

0
FIG.5- TYPICAL FORWARD CHARACTERISTICS 0.1 0.5 1 2 5 10 20 50 100 200 500 800
50 REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD CURRENT. (A)

10

0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)