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Electonics Lab Experiment No 8&9 NadineAlsadi

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Electonics Lab

Experiment 8 & 9
Using an ohmeter to test transistor diode
junctions & Transistor Base Biasing

Name: Nadine Alsadi Dr. Sana´ Salamh


ID: 201710630
Objectives/ Purpose:
In this experiment we are going to see the difference between the
NPN and PNP junction by using an multimeter. If the 3 terminals (E, B
& C) of the transitor are known, then its possible to determine if its
an NPN or PNP transistor.

How can we notice if its a NPN or PNP transistor?


Ans:
If the middle is giving us a positive voltage value and the Emitter and
collecter are values so its a NPN transistor.

How can we notice which one ist he Emitter?


Answ: the higher voltage value is the emitter.

Table 8.1
NPN transistor (Lab values)

Step Number Meter Leads


+ - Result

2 Base Emitter 0.617 V

3 Emitter Base Out of range

4 Base Collector 0.616 V

5 Collector Base Out of range

7 Collector Emitter O.C

7 Emitter Collector O.C

Conclusion:
We learned in this lab how to test NPN and PNP transistors using a multimeter,
and we connected each circuit in lab and see the measurements. Using the
simple test for diodes and transistors is very useful in many service and repair
scenarios. Being able to have a good idea of whether a diode or transistor is
functional is very useful. As transistor testers are not widely sold, being able to
use any multimeter to provide this capability is particularly useful. It is even
more convenient because the test is very easy to perform.
Experiment 9: Transistor base biasing

Objectives/ Purpose:

A BJT is comprised basically of three doped semiconductor


regions forming two p-n junctions connected back-to-back.
The three semiconductor regions are identified as: the Base
(B), the collector (C), and the emitter (E). The labeling codes
"NPN" and "PNP" identify the doping the three
semiconductor regions that make up a BJT: NPN implies n-
type doping of the collector and emitter and p-type doping of
the base; PNP implies the inverse. While the collector and
emitter are always of the same doping type, the doping
concentrations may be different in those two regions. The
operation of a BJT depends on both electron and hole
conduction. Depending on the bias of each of the two p-n
junctions, the BJT operates in one of four distinct regions
Table 9.1

Transistor 1
Parameter
Measured value Excepted value Multisim
value
5.13 mA 1.22*10^-4 A 121.666 µA
IB
21.2 µA 0.0088 A 8.852 mA
IC
Ic/Ib 72.75 72.75
βdc 4.13255

0.69 V 0.704 V 726.742 mV


VB
3.967 V 0.2 V 147.605 mV
VCE
Vcc=9
We can find the expected values by using this rules:

Table 9.2

Parameter Calculated Measured Multisim values


Values values

IC VCE IC VCE IC VCE

Cutoff 0 9V 0 9.08 V 9.237 nA 9V


VCC/RC
Saturation 9µA 0 8.62 A 0. 8.914 mA 86.034 V

10% 7.99 mA 1V 7.92 1.09 V 7.885 mA 1.115 V


Active mA
region
15% 6.08mA 2.33V 6.68 2.40 V 6.162 mA 2.838 V
mA

25% 4.79 mA 4.5 V -4.57 4.56 V 4.23 mA 4.77 V


mA
Cutoff

Saturation
Active region:
DC Load line

Conclusion:

In this lab we learned how to verify the voltages and currents in a base
biased circuit as well as to construct its dc load line.
We learned also: Transistor Biasing is the process of setting a
transistors DC operating voltage or current conditions to the correct
level so that any AC input signal can be amplified correctly by the
transistor. The steady state operation of a transistor depends a great
deal on its base current, collector voltage, and collector current values
and therefore, if the transistor is to operate correctly as a linear
amplifier, it must be properly biased around its operating point.

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