Chapter 4
Chapter 4
Chapter 4
The transistor models introduced in Chapter 3 will now be used to perform a small signal ac
analysis of a number of standard transistor network configurations. There are basically three
configurations for implementing single-stage BJT amplifiers: the common-emitter, the common-
base, and the common-collector configurations.
The Common-Emitter (CE) Amplifier
The CE configuration is the most widely used of all BJT amplifier circuits.
A large capacitor CE, usually in the F or tens of pF range, is connected between emitter and
ground to establish a signal ground (or an ac ground, as it is sometimes called) at the emitter.
This capacitor is required to provide a very low impedance to ground (ideally, zero impedance;
i.e., in effect, a short circuit) at all signal frequencies of interest. In this way, the emitter signal
current passes through CE to ground and thus bypasses the output resistance of the current
source / (and any other circuit component that might be connected to the emitter); hence CE is
called a bypass capacitor. Obviously, the lower the signal frequency, the less effective the bypass
capacitor becomes.
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
2
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
FIGURE 4.1 (a) A common-emitter amplifier using the structure of Fig. 4.1 (b) Equivalent
circuit obtained by replacing the transistor with its hybrid-model.
In order not to disturb the dc bias currents and voltages, the signal to be amplified shown as a
voltage source vsig with an internal resistance Rsig, is connected to the base through a large
capacitor CC1. Capacitor CC1, known as a coupling capacitor, is required to act as a perfect short
circuit at all signal frequencies of interest while blocking dc.
To determine the terminal characteristics of the CE amplifier, that is, its input resistance, voltage
gain, and output resistance, we replace the BJT with its hybrid- small-signal model. We observe
at the outset that this amplifier is unilateral and thus Rin = Ri( and Rout = Ro. Analysis of this
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
3
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
circuit is straightforward and proceeds in a step-by-step manner, from the signal source to the
amplifier load. At the amplifier input we have
Thus, we note that the input resistance of the CE amplifier will typically be a few kilohms, which
can be thought of as low to moderate. The fraction of source signal vsig that appears across the
input terminals of the amplifier proper can be found from
Replacing vby vi we can write for the voltage gain of the amplifier proper; that is, the voltage
gain from base to collector,
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
4
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
This equation simply says that the voltage gain from base to collector is found by multiplying gm
by the total resistance between collector and ground. The open-circuit voltage gain Avo can be
Obtained by setting RL =
From which we note that the effect of ro is simply to reduce the gain, usually only slightly since
typically ro >> Rc, resulting in
The output resistance Rout can be found from the equivalent circuit by looking back into the
output terminal while short-circuiting the source vsig. Since this will result in v= 0, we see that
Rout=Rc||ro
Thus ro reduces the output resistance of the amplifier, again usually only slightly since typically
r0 >> Rc and
By Av
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
5
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Which is the gain Av; in other words, when Rsig is small, the overall voltage gain is almost equal
to the gain of the CE circuit proper, which is independent of
Short-circuit current gain, Ais. This can be easily done by referring to the amplifier equivalent
circuit .When RL is short circuited, the current through it will be equal to
Exercise :
Example. Find the common-emitter amplifier shown in Fig. P5.130, Let VCC =9V, R1 =
27k, R2 = 15k, RE = 1.2k, and RC = 2.2k. The transistor has = 100 and VA = 100
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
6
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
V. Calculate the dc bias current IE. If the amplifier operates between a source for which
Rsig = 10 k and a load of 2k replace the transistor with its hybrid- model, and find
the value of Rin, the voltage gain and the current gain
v o i
o
v sig ii
DC Analysis
15 27
RB 9.64k
15 27 RB
VBB vBE
1.2k
IE
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
7
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
DC Value
VBB VBE
IE
RB
RE
1
3.21 0.7
IE 1.94 mA
9.64
1. 2
101
IC 0.99 1.94 1.92mA
VB VBE VE 0.7 1.94 1.2 2.33V
VC VCC RC I C 9 2.2 1.92 4.776V
IC = 1.92 mA
VT = 25 mV
= 100 ,
= 0.99
VA = 100 V
vo vi vo
vi
Ri
1.15 vo
-gm ro || RC || RL Av
vS Rsig Ri 10 1.15 vi vs vs vi
0.99 1.94
g m ro || RC || RL 8.13V / V
gm
IC
76.8mA / V Ri
VT 0.025 Av
r
100
1.3k
Rsig Ri
io vo Rsig Ri
gm 76.8
vo vS
ro
VA
52.1k io ii Ai 45.3A / A
IC
RL Rsig Rin ii vS RL
Ri RB || r 1.15k
Ro ro || RC 2.11k
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
8
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Input Resistance
Ri RB || r ~ r
Low to moderate typically a few kilohms
Ro ro || RC ~ RC
Output Resistance
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
9
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Which except for its positive sign is identical to the expression for Av for the CE amplifier.
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
10
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Fig 4.2 (a) common base amplifier (b) Equivalent circuit obtained by replacing the transistor
with its T model.
The open-circuit voltage gain Avo can be found from the above equation by setting RL =
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
11
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Avo = gmRc
Again this is identical to Avo for the CE amplifier except that the CB amplifier is noninverting.
The output resistance of the CB circuit can be found by inspection from the circuit in
Rout = Rc
One of the applications of the CB circuit is to amplify high-frequency signals that appear on a
coaxial cable. To prevent signal reflection on the cable, the CB amplifier is required to have an
input resistance equal to the characteristic resistance of the cable, which is usually in the range of
50 to 75 .
The overall voltage gain Gv of the CB amplifier can be obtained by multiplying the ratio
vi/vsigby Av
In summary, the CB amplifier exhibits a very low input resistance (re), a short-circuit current
gain that is nearly unity (), an open-circuit voltage gain that is positive and equal in magnitude
to that of the CE amplifier (gmRC), and like the CE amplifier, a relatively high output resistance
(RC). The CB amplifier has excellent high-frequency performance. A very significant application
of the CB circuit is as a unity-gain current amplifier or current buffer: It accepts an input signal
current at a low input resistance and delivers a nearly equal current at very high output resistance
at the collector (the output resistance excluding RC and neglecting ro is infinite).
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
12
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Example
For the circuit shown, Assume =100
(a) Find the input resistance Rin
(b) Find the voltage gain vo/vsig
Analysis
VT VT 25
re 75
gm IC IE I E 0.33
VT
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
13
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
vo
( R B ||R L ) 0.99(100k || 1.5k)
ie
vo
9V / V
vsig
Summary of common base amplifier
Very Low input resistance Rin=re
Short Circuit Current Gain is nearly unity
Open circuit Voltage Gain is equal to CE and is positive gm RC
Relatively high output resistance (Rc) same as CE
Excellent high frequency performance
As short circuit current gain is unity Current Buffer, it accept an input signal
current at a low input resistance and delivers equal current at a very high output
resistance
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
14
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
15
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
16
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Figure 4.3 (a) An emitter-follower circuit. (b) Small-signal equivalent circuit of the emitter
follower with the transistor replaced by its T model augmented with ro. (c) The circuit in (b)
redrawn to emphasize that ro is in parallel with RL.
Figure 4.4 (a) An equivalent circuit of the emitter follower obtained from the circuit in Fig.
4.3(c) by reflecting all resistances in the emitter to the base side, (b) The circuit in (a) after
application of Thevenin theorem to the input circuit composed of vsig Rsig and RB.
The total input resistance of the follower is
Rin = RB || Rib
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
17
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
The voltage gain is less than unity; however, for RB >> Rsig and (+ 1 )[re +
(ro || RL)] >> (Rsig ||RB), it becomes very close to unity. Thus the voltage at the emitter (vo)
Follows very closely the voltage at the input, which gives the circuit the name emitter follower.
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
18
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
19
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
Figure 4.5 (a) Capacftively coupled common-emitter amplifier, (b) Sketch of the magnitude of
the gain of the CE amplifier versus frequency. The graph delineates the three frequency bands
relevant to frequency response determination.
Figure 4.5(b) shows that the gain falls off at signal frequencies below and above the midland.
The gain is almost constant over a wide frequency band, called the midband. The value of the
midband gain AM corresponds to the overall voltage gain Gv.
The gain falloff in the low-frequency band is due to the fact that even though CC1, Cc2, and CE
are large capacitors (typically, in the F range), as the signal frequency is reduced their
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
20
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
impedances increase and they no longer behave as short circuits. On the other hand, the gain falls
off in the high-frequency band as a result of Cgs and Cgd, which though very small (in the
fraction of a pF to the pF range), their impedances at sufficiently high frequencies decrease; thus
they can no longer be considered as open circuits.
END of chapter 4
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
21
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016
22
APPLIED ELECTRONICS I (ECEG2111): CHAPTER 4: BJT SMALL SIGNAL AMPLIFIER
ADU, CET, Department of Electrical and Computer Engineering compiled by Tsegay A. December, 2016