Irf 4905 PBF

PD - 94816
IRF4905PbF
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
HEXFET Power MOSFET
VDSS = -55V
RDS(on) = 0.02
ID = -74A
Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-74
-52
-260
200
1.3
20
930
-38
20
-5.0
-55 to + 175
Units
A
W
W/C
V
mJ
A
mJ
V/ns
C
300 (1.6mm from case )

10 lbfin (1.1Nm)
Thermal Resistance
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
0.75
62
C/W
11/6/03
IRF4905PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
-2.0
21
Typ.
-0.05
18
99
61
96
LD
Internal Drain Inductance
4.5
LS
Internal Source Inductance
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3400
1400
640
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
V
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA
0.02
VGS = -10V, ID = -38A

-4.0
V
VDS = VGS, ID = -250A
S
VDS = -25V, ID = -38A
-25
VDS = -55V, VGS = 0V
A
-250
VDS = -44V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
180
ID = -38A
32
nC
VDS = -44V
86
VGS = -10V, See Fig. 6 and 13
VDD = -28V
ID = -38A
ns
RG = 2.5
RD = 0.72, See Fig. 10

Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
VGS = 0V
pF
VDS = -25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics

IS
ISM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-74
showing the
A
G
integral reverse
-260
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -38A, VGS = 0V
89 130
ns
TJ = 25C, IF = -38A
230 350
nC
di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD -38A, di/dt -270A/s, VDD V(BR)DSS,
Starting TJ = 25C, L = 1.3mH
Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
RG = 25, IAS = -38A. (See Figure 12)
TJ 175C
IRF4905PbF
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-ID , Drain-to-Source Current (A)
100
10
-4.5V
20s PULSE WIDTH

Tc = 25C
A
1
0.1
10
100
100
R DS(on) , Drain-to-Source On Resistance

(Normalized)
TJ = 25C
100
TJ = 175C
10
VDS = -25V
20s PULSE WIDTH
7
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
2.0
-VDS , Drain-to-Source Voltage (V)
1000
20s PULSE WIDTH

TC = 175C
1
0.1
Fig 1. Typical Output Characteristics
-4.5V
10
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
TOP
10
I D = -64A
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 4. Normalized On-Resistance

Vs. Temperature
IRF4905PbF
7000
5000
-V GS , Gate-to-Source Voltage (V)
6000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
4000
Coss
3000
2000
Crss
1000
0
1
10
100
I D = -38A
VDS = -44V
VDS = -28V
16
12
FOR TEST CIRCUIT

SEE FIGURE 13
80
120
160
200
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED

BY R DS(on)
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
100
TJ = 175C
TJ = 25C
10
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode

Forward Voltage
1.8
100
100s
1ms
10
10ms
TC = 25C
TJ = 175C
Single Pulse
1
1
10
Fig 8. Maximum Safe Operating Area
100
IRF4905PbF
80
RD
VDS
ID , Drain Current (A)
VGS
60
D.U.T.
RG
V DD
-10V
40
Pulse Width 1 s
Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
td(on)
tr
t d(off)
tf
VGS
25
50
75
100
125
150
175
10%
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs.

Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01
15V
Fig 12a. Unclamped Inductive Test Circuit
E AS , Single Pulse Avalanche Energy (mJ)
IRF4905PbF
2500
TOP
BOTTOM
2000
1500
1000
500
0
25
I AS
ID
-16A
-27A
-38A
50
75
100
125
150
175
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.
50K
QG
12V
-10V
QGS
.2F
.3F
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRF4905PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

-

RG
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS
+
-
V DD
Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
[ ISD ]
IRF4905PbF
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line

position indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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PD - 94816

HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier

Absolute Maximum Ratings

Continuous Drain Current, VGS @ -10V

300 (1.6mm from case )

Gate-to-Source Forward Leakage

Internal Drain Inductance

Internal Source Inductance

Drain-to-Source Leakage Current

VGS = -10V, ID = -38A 

RD = 0.72, See Fig. 10 

and center of die contact

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Min. Typ. Max. Units

Repetitive rating; pulse width limited by

ISD -38A, di/dt -270A/s, VDD V(BR)DSS,

Starting TJ = 25C, L = 1.3mH

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

RG = 25, IAS = -38A. (See Figure 12)

-ID , Drain-to-Source Current (A)

-ID , Drain-to-Source Current (A)

20s PULSE WIDTH

R DS(on) , Drain-to-Source On Resistance

-ID , Drain-to-Source Current (A)

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

-VDS , Drain-to-Source Voltage (V)

20s PULSE WIDTH

Fig 1. Typical Output Characteristics

-VDS , Drain-to-Source Voltage (V)

80 100 120 140 160 180

TJ , Junction Temperature (C)

Fig 4. Normalized On-Resistance

-V GS , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

-VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

OPERATION IN THIS AREA LIMITED

-I D , Drain Current (A)

-ISD , Reverse Drain Current (A)

-VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

ID , Drain Current (A)

Fig 10a. Switching Time Test Circuit

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC)

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 12a. Unclamped Inductive Test Circuit

VGS = -10V, ID = -38A

RD = 0.72, See Fig. 10