IRFH5215PbF

HEXFET Power MOSFET

VDS

150

RDS(on) max

58

Qg (typical)

21

nC

RG (typical)

2.3

27

(@VGS = 10V)

ID
(@Tc(Bottom) = 25C)

PQFN 5X6 mm

Applications

Primary Side Synchronous Rectification

Inverters for DC Motors
DC-DC Brick Applications
Boost Converters

Features and Benefits

Features
Low RDSon (< 58 m)
Low Thermal Resistance to PCB (<1.2C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5215TRPBF
IRFH5215TR2PBF

Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm

Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability

Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400

Note

EOL notice #259

Absolute Maximum Ratings

VDS
VGS
ID @ TA = 25C
ID @ TA = 70C
ID @ TC(Bottom) = 25C
ID @ TC(Bottom) = 100C
IDM
PD @TA = 25C
PD @ TC(Bottom) = 25C

Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation

TJ
TSTG

Linear Derating Factor

Operating Junction and
Storage Temperature Range

g
g

Max.
150
20
5.0
4.0
27
17
108
3.6
104

Units

0.029
-55 to + 150

W/C

Notes through are on page 8

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IRFH5215PbF
Static @ TJ = 25C (unless otherwise specified)

gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge

Min.
150

3.0

21

Typ.

0.19
45.5

-12

21
7.2
2.2
6.7
4.9
8.9
10

Max. Units
Conditions

V VGS = 0V, ID = 250uA

V/C Reference to 25C, ID = 1.0mA
58
m VGS = 10V, ID = 16A
5.0
V
VDS = VGS, ID = 100A
mV/C
20
VDS = 150V, VGS = 0V
A
VDS = 150V, VGS = 0V, TJ = 125C
250
100
VGS = 20V
nA
-100
VGS = -20V

S VDS = 50V, ID = 16A

32

VDS = 75V
VGS = 10V

nC
ID = 16A

nC VDS = 16V, VGS = 0V

RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss

Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

2.3
6.7
6.3
11
2.9
1350
120
30

BVDSS
VDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current

ns

pF

VDD = 75V, VGS = 10V

ID = 16A
RG=1.3
VGS = 0V
VDS = 50V
= 1.0MHz

Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current

EAS
IAR

Typ.

Max.
96
16

Units
mJ
A

Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

IS
ISM

Typ.

Max. Units

27

108

c

VSD
trr
Qrr
ton

Min.

Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25C, IS = 16A, VGS = 0V
TJ = 25C, IF = 16A, VDD = 75V
di/dt = 500A/s

1.3
V

40
60
ns

370
555
nC
Time is dominated by parasitic Inductance

e

Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)

f
f

Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient

Parameter

g
g

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Typ.

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Max.
1.2
15
35
22

Units
C/W

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IRFH5215PbF
1000

1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

TOP

Tj = 25C
ID, Drain-to-Source Current (A)

100

BOTTOM

10

60s PULSE WIDTH

Tj = 150C
ID, Drain-to-Source Current (A)

60s PULSE WIDTH

VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

TOP

100

0.1

BOTTOM

10

5.0V

5.0V
0.01

0.1
0.1

10

100

1000

0.1

V DS, Drain-to-Source Voltage (V)

100

1000

1000

2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)

Fig 2. Typical Output Characteristics

ID, Drain-to-Source Current (A)

Fig 1. Typical Output Characteristics

100
T J = 150C
10

T J = 25C

1
VDS = 50V
60s PULSE WIDTH

ID = 16A
VGS = 10V

2.0

1.5

1.0

0.5

0.0

10

12

14

16

-60 -40 -20 0

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

14.0

VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd

VGS, Gate-to-Source Voltage (V)

ID= 16A

C oss = C ds + C gd

10000

Ciss

1000

Coss
Crss

100

20 40 60 80 100 120 140 160

T J , Junction Temperature (C)

VGS, Gate-to-Source Voltage (V)

C, Capacitance (pF)

10

V DS, Drain-to-Source Voltage (V)

0.1

VDS= 120V
VDS= 75V

12.0

VDS= 30V

10.0
8.0
6.0
4.0
2.0
0.0

10
1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

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10

15

20

25

30

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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1000

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

100

TJ = 150C

10

T J = 25C
1

OPERATION IN THIS AREA

LIMITED BY R DS(on)
100
1msec
10msec

10

Tc = 25C
Tj = 150C
Single Pulse

VGS = 0V
1

0.1
0.2

0.4

0.6

0.8

1.0

1.2

10

100

1000

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

30
VGS(th) , Gate threshold Voltage (V)

6.0

25
ID, Drain Current (A)

100sec

20
15
10
5
0

5.0

4.0
ID = 100A
ID = 250A
ID = 1.0mA
ID = 10mA

3.0

2.0
25

50

75

100

125

150

-75 -50 -25

T C , Case Temperature (C)

25

50

75 100 125 150

T J , Temperature ( C )

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

Fig 10. Threshold Voltage vs. Temperature

Thermal Response ( Z thJC ) C/W

10

1
D = 0.50
0.20
0.10
0.05

0.1

0.02
0.01

0.01

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )

0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

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130

400

ID = 16A

120
110
TJ = 125C

100
90
80
70
60

TJ = 25C

50
40

EAS , Single Pulse Avalanche Energy (mJ)

RDS(on), Drain-to -Source On Resistance (m )

IRFH5215PbF
ID
TOP
2.0A
4.9A
BOTTOM 16A

350
300
250
200
150
100
50
0

6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

25

50

75

100

125

150

Starting T J , Junction Temperature (C)

VGS, Gate -to -Source Voltage (V)

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

V(BR)DSS
tp

15V

DRIVER

VDS

D.U.T

RG

+
V
- DD

IAS

20V

Fig 14a. Unclamped Inductive Test Circuit

VDS
VGS
RG

RD

Fig 14b. Unclamped Inductive Waveforms

VDS

90%
D.U.T.
+

-VDD

V10V
GS
Pulse Width 1 s
Duty Factor 0.1

Fig 15a. Switching Time Test Circuit

I AS

0.01

tp

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10%

VGS
td(on)

tr

td(off)

tf

Fig 15b. Switching Time Waveforms

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IRFH5215PbF
D.U.T

Driver Gate Drive

D.U.T. ISD Waveform

Reverse
Recovery
Current

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

V DD

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

Id

Vds
Vgs

L
DUT

1K

VCC
Vgs(th)

Qgs1 Qgs2

Fig 17. Gate Charge Test Circuit

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Qgd

Qgodr

Fig 18. Gate Charge Waveform

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IRFH5215PbF
PQFN 5x6 Outline "B" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL
RECTIFIER LOGO

DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)

PIN 1
IDENTIFIER

XXXX
XYWWX
XXXXX

PART NUMBER
(4 or 5 digits)

MARKING CODE
(Per Marking Spec)

LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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PQFN 5x6 Outline "B" Tape and Reel

Qualification information
Indus trial

Qualification level

(per JE DE C JE S D47F

Moisture Sensitivity Level

PQFN 5mm x 6mm

RoHS compliant

guidelines )
MS L1

(per JE DE C J-S T D-020D

Yes

Qualification standards can be found at International Rectifiers web site

http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.75mH, RG = 50, IAS = 16A.
Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

Revision History
Date

Comment

1/13/2014

Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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