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    Advanced Power Electronics Corp.: AP4525GEM

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    sontuyet82
    The document describes an N-channel and P-channel enhancement mode power MOSFET. Key specifications and characteristics are provided for both types including: maximum ratings, electrical characteristics such as threshold voltage and on-resistance, output and transfer characteristics, and thermal properties. The MOSFETs are provided in an SO-8 surface mount package and are intended for low voltage applications like DC/DC converters.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Advanced Power Electronics Corp.: AP4525GEM

    Uploaded by

    sontuyet82
    208 views7 pages
    The document describes an N-channel and P-channel enhancement mode power MOSFET. Key specifications and characteristics are provided for both types including: maximum ratings, electrical characteristics such as threshold voltage and on-resistance, output and transfer characteristics, and thermal properties. The MOSFETs are provided in an SO-8 surface mount package and are intended for low voltage applications like DC/DC converters.

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    4525 Gem

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    The document describes an N-channel and P-channel enhancement mode power MOSFET. Key specifications and characteristics are provided for both types including: maximum ratings, electrical characteristics such as threshold voltage and on-resistance, output and transfer characteristics, and thermal properties. The MOSFETs are provided in an SO-8 surface mount package and are intended for low voltage applications like DC/DC converters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    208 views7 pages

    Advanced Power Electronics Corp.: AP4525GEM

    Uploaded by

    sontuyet82
    The document describes an N-channel and P-channel enhancement mode power MOSFET. Key specifications and characteristics are provided for both types including: maximum ratings, electrical characteristics such as threshold voltage and on-resistance, output and transfer characteristics, and thermal properties. The MOSFETs are provided in an SO-8 surface mount package and are intended for low voltage applications like DC/DC converters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    AP4525GEM

    Pb Free Plating Product

    Advanced Power Electronics Corp.


    Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS Compliant
    SO-8
    S1 G1 D2 D1 D1 D2

    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

    N-CH BVDSS RDS(ON)


    G2 S2

    40V 28m 6A -40V 42m -5A

    ID P-CH BVDSS RDS(ON) ID

    Description
    The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

    D1 G1 G2

    D2

    S1

    S2

    Absolute Maximum Ratings


    Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
    1 3 3

    Rating N-channel 40 16 6.0 5.0 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -40 16 -5.0 -4.0 -30

    Units V V A A A W W/

    Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

    Thermal Data
    Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
    3

    Value Max. 62.5

    Unit /W

    Data and specifications subject to change without notice

    200725064-1/7

    AP4525GEM
    N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
    Symbol BVDSS
    BVDSS/Tj

    Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2

    Test Conditions VGS=0V, ID=250uA

    Min. 40 1 -

    Typ. 0.04 6 8 1.5 4 7 20 20 4 580 100 70 2

    Max. Units 28 32 3 1 25 30 13 930 3 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF

    Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA

    RDS(ON)

    VGS=10V, ID=6A VGS=4.5V, ID=4A

    VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg

    Gate Threshold Voltage Forward Transconductance


    Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC)
    o

    VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz

    Gate-Source Leakage Total Gate Charge


    2

    Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
    2

    Source-Drain Diode
    Symbol VSD trr Qrr Parameter Forward On Voltage
    2 2

    Test Conditions IS=1.1A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s

    Min. -

    Typ. 20 12

    Max. Units 1.8 V ns nC

    Reverse Recovery Time

    Reverse Recovery Charge

    2/7

    AP4525GEM
    P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
    Symbol BVDSS
    BVDSS/Tj

    Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
    Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
    o o

    Test Conditions VGS=0V, ID=-250uA


    2

    Min. -40 -0.8 -

    Typ. -0.02 5 9 2 5 8.5 15 27 25 770 165 115 6

    Max. Units 42 60 -2.5 -1 -25 30 24 1230 9 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF

    Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA

    RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg

    VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3,VGS=-10V RD=4 VGS=0V VDS=-20V f=1.0MHz f=1.0MHz

    Gate-Source Leakage Total Gate Charge


    2

    Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
    2

    Source-Drain Diode
    Symbol VSD trr Qrr Parameter Forward On Voltage
    2 2

    Test Conditions IS=-1.1A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s

    Min. -

    Typ. 20 16

    Max. Units -1.8 V ns nC

    Reverse Recovery Time

    Reverse Recovery Charge

    Notes:
    1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad.

    3/7

    AP4525GEM
    N-Channel
    30

    30

    T A = 25 o C ID , Drain Current (A)

    20

    ID , Drain Current (A)

    10V 7.0V 5.0V 4.5V V G =3.0V

    T A = 150 o C

    10V 7.0V 5.0V 4.5V V G =3.0V

    20

    10

    10

    0 0 1 2 3

    0 0 1 2 3 4

    V DS , Drain-to-Source Voltage (V)

    V DS , Drain-to-Source Voltage (V)

    Fig 1. Typical Output Characteristics

    Fig 2. Typical Output Characteristics

    120

    ID=4A
    100

    T A =25 o C Normalized RDS(ON)

    ID=6A V G =10V
    1.6

    RDS(ON) (m )

    80

    60

    1.2

    40

    20
    2 4 6 8 10

    0.8 25 50 75 100 125 150

    V GS , Gate-to-Source Voltage (V)

    T j , Junction Temperature ( o C)

    Fig 3. On-Resistance v.s. Gate Voltage

    Fig 4. Normalized On-Resistance v.s. Junction Temperature


    1.6

    10

    Normalized VGS(th) (V)

    1.2

    IS(A)

    T j =150 o C
    4

    T j =25 o C

    0.8

    0 0 0.2 0.4 0.6 0.8 1 1.2

    0.4 -50 0 50 100 150

    V SD , Source-to-Drain Voltage (V)

    T j , Junction Temperature ( C)

    Fig 5. Forward Characteristic of

    Reverse Diode

    Fig 6. Gate Threshold Voltage v.s. Junction Temperature


    4/7

    AP4525GEM
    N-Channel
    f=1.0MHz
    12 1000

    VGS , Gate to Source Voltage (V)

    I D =6A V DS =20V
    8

    C iss

    C (pF)

    100

    C oss C rss

    0 0 5 10 15 20

    10 1 5 9 13 17 21 25 29

    Q G , Total Gate Charge (nC)

    V DS , Drain-to-Source Voltage (V)

    Fig 7. Gate Charge Characteristics

    Fig 8. Typical Capacitance Characteristics

    100

    Normalized Thermal Response (Rthja)

    Duty factor=0.5

    10

    100us ID (A) 1ms


    1

    0.2

    0.1

    0.1
    0.05

    10ms 100ms
    0.1

    PDM

    t
    0.02

    T A =25 o C Single Pulse

    T
    0.01

    1s DC

    Duty factor = t/T Peak Tj = PDM x Rthja + Ta


    Single Pulse

    Rthja =135o C/W

    0.01 0.1 1 10 100

    0.01

    0.001

    0.01

    0.1

    10

    100

    V DS , Drain-to-Source Voltage (V)

    t , Pulse Width (s)

    Fig 9. Maximum Safe Operating Area

    Fig 10. Effective Transient Thermal Impedance

    50

    VG
    40

    V DS =5V T j =25 o C T j =150 o C

    ID , Drain Current (A)

    QG 4.5V QGS QGD

    30

    20

    10

    Charge
    0 0 2 4 6

    V GS , Gate-to-Source Voltage (V)

    Fig 11. Transfer Characteristics

    Fig 12. Gate Charge Waveform

    5/7

    AP4525GEM
    P-Channel
    30 30

    T A = 25 o C -ID , Drain Current (A)

    -10V -7.0V -5.0V -4.5V -ID , Drain Current (A)


    20

    T A = 150 C

    -10V -7.0V -5.0V -4.5V

    20

    V G = - 3.0V

    V G = - 3.0V

    10

    10

    0 0 1 2 3 4 5

    0 0 1 2 3 4 5

    -V DS , Drain-to-Source Voltage (V)

    -V DS , Drain-to-Source Voltage (V)

    Fig 1. Typical Output Characteristics

    Fig 2. Typical Output Characteristics

    120

    1.6

    I D = -3 A RDS(ON) (m) T A = 25 o C Normalized RDS(ON)


    90 1.4

    I D = -5A V G = -10V

    1.2

    60

    1.0

    30
    2 4 6 8 10

    0.8 25 50 75 100 125 150

    -V GS ,Gate-to-Source Voltage (V)

    T j , Junction Temperature ( C)

    Fig 3. On-Resistance v.s. Gate Voltage

    Fig 4. Normalized On-Resistance v.s. Junction Temperature


    1.6

    10

    Normalized -VGS(th) (V)


    1.2

    1.2

    -IS(A)

    T j =150 o C
    4

    T j =25 o C

    0.8

    0 0 0.2 0.4 0.6 0.8 1

    0.4 -50 0 50 100 150

    -V SD , Source-to-Drain Voltage (V)

    T j , Junction Temperature ( C)

    Fig 5. Forward Characteristic of

    Reverse Diode

    Fig 6. Gate Threshold Voltage v.s. Junction Temperature


    6/7

    AP4525GEM
    P-Channel
    12 10000

    f=1.0MHz

    -VGS , Gate to Source Voltage (V)

    I D = -5 A V DS = - 2 0 V
    8 1000

    C iss C (pF)

    100

    C oss C rss

    0 0 4 8 12 16 20

    10 1 5 9 13 17 21 25 29

    Q G , Total Gate Charge (nC)

    -V DS , Drain-to-Source Voltage (V)

    Fig 7. Gate Charge Characteristics

    Fig 8. Typical Capacitance Characteristics

    100

    Normalized Thermal Response (Rthja)

    Duty factor=0.5

    10

    100us 1ms

    0.2

    -ID (A)

    0.1

    10ms 100ms

    0.1

    0.05

    PDM

    t
    0.02

    0.1

    T c =25 o C Single Pulse

    1s DC

    T
    Duty factor = t/T Peak Tj = PDM x Rthja + T a
    Single Pulse

    0.01

    Rthja=135 oC/W

    0.01 0.1 1 10 100

    0.01

    0.001

    0.01

    0.1

    10

    100

    -V DS , Drain-to-Source Voltage (V)

    t , Pulse Width (s)

    Fig 9. Maximum Safe Operating Area

    Fig 10. Effective Transient Thermal Impedance

    30

    V DS = -5V -ID , Drain Current (A)

    T j =25 C

    T j =150 C

    VG QG

    20

    -4.5V QGS
    10

    QGD

    Charge
    0 0 2 4 6

    -V GS , Gate-to-Source Voltage (V)

    Fig 11. Transfer Characteristics

    Fig 12. Gate Charge Waveform

    7/7

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