AP15N03GH/J

Pb Free Plating Product

Advanced Power Electronics Corp.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

BVDSS RDS(ON) ID

30V 80m 15A

Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03GJ) is available for low-profile applications.

D S

TO-252(H)

GD

TO-251(J)

Absolute Maximum Ratings

Rating 30 20 15 9 50 28 0.22 -55 to 150 -55 to 150

Units V V A A A W W/

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit /W /W

Data & specifications subject to change without notice

200227032

AP15N03GH/J
Electrical Characteristics@T j=25 oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj

Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o

Test Conditions VGS=0V, ID=250uA VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.4,VGS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHz

Min. 30 1 ` -

Typ. 0.037

Max. Units 80 100 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

16 4.6 1.1 3 4.9 22.5 12.2 3.3 160 107 32

Gate-Source Leakage Total Gate Charge

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )

Test Conditions VD=VG=0V , VS=1.3V

Min. -

Typ. -

Max. Units 15 50 1.3 A A V

Pulsed Source Current ( Body Diode )

Forward On Voltage

Tj=25, IS=15A, VGS=0V

Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.

AP15N03GH/J

50

40

T C =25 C V G =10V VG ID , Drain Current (A) =8.0V

T C =150 C V G =10V V G =8.0V

30

ID , Drain Current (A)

V G =6.0V

V G =6.0V

20

10 10

V =4.0V
G

V G =4.0V

0 0 1 2 3 4 5 6 7

0 0 1 2 3 4 5 6 7

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

RDS(ON) (m )

90

1.8

I D =8A
80

I D =8A
1.6

T C =25 o

70

Normalized R DS(ON)
2 3 4 5 6 7 8 9 10 11

1.4

1.2

60

1.0

50 0.8

40

0.6 -50 0 50 100 150

V GS (V)

T j , Junction Temperature (o C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

AP15N03GH/J

20

40

15

30

ID , Drain Current (A)

10

0 25 50 75 100 125 150

PD (W)

20

10

0 0 50 100 150

T c , Case Temperature ( C)

Tc

Case Temperature (

C)

Fig 5. Maximum Drain Current v.s.

Fig 6. Typical Power Dissipation

Case Temperature

100

DUTY=0.5

10us

Normalized Thermal Response (R thjc)

0.2

ID (A)

0.1 0.1 0.05

10

100us

0.02

PDM

1ms

t
0.01 SINGLE PULSE

T c =25 C

10ms

Duty factor = t/T Peak Tj = P DM

x Rthjc + TC

Single Pulse
1 1 10

DC
0.01

100

0.00001

0.0001

0.001

0.01

0.1

V DS (V)

t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area

Fig 8. Effective Transient Thermal Impedance

AP15N03GH/J

16

f=1.0MHz
1000

I D =8A VGS , Gate to Source Voltage (V) V DS =16V V DS =20V V DS =24V C (pF)

12

Ciss

10

100

Crss

0 0 1 2 3 4 5 6 7 8 9 10
10 1 6 11 16 21 26 31

Q G , Total Gate Charge (nC)

V DS (V)

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

100

IS (A)

10

T j =150o C T j =25 C
o

VGS(th) (V)
1 0 -50

0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

50

100

150

V SD (V)

T j , Junction Temperature(

C)

Fig 11. Forward Characteristic of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s. Junction Temperature

AP15N03GH/J

VDS
RD

90%

VDS

TO THE OSCILLOSCOPE 0.5x RATED VDS

RG

10%
+ 10 V S VGS

VGS td(on) tr td(off) tf

Fig 13. Switching Time Circuit

Fig 14. Switching Time Waveform

VG
VDS TO THE OSCILLOSCOPE

QG 5V QGD

0.8 x RATED VDS

QGS

S
+

VGS

1~ 3 mA I
G

Charge

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform

AP15N03GH / J Pb producto gratuito Revestimiento avanzada de energa N-canal en modo mejorado Electronics Corp. MOSFET

carga de puerta de baja D BVDSS 30V simple requisito de unidad de RDS (on) 80m Cambio rpido

Descripcin G ID 15A S

El paquete A-252 es universalmente preferido para todas las aplicaciones comerciales e industriales de montaje de superficie y adecuado para aplicaciones de baja tensin, tales como convertidores CC / CC. La versin de orificio pasante (AP15N03GJ) est disponible para aplicaciones de bajo perfil. GDS

A-252 (H)

Los valores mximos absolutos G D S A-251 (J) Smbolo de unidades de los parmetros de calificacin VDS drenaje-fuente de voltaje de 30 V VGS puerta-fuente de voltaje de 20 V ID TC = 25 Corriente continua de drenaje, VGS @ 10V 15 A

ID TC = 100 Corriente continua de drenaje, VGS @ 10V 9 A IDM 1 Drenaje pulsada de corriente 50 A PD TC = 25 Potencia de disipacin total de 28 W Factor de correccin lineal 0,22 W / Rango de temperatura de almacenamiento TSTG -55 a 150 Junction TJ Rango de temperatura de -55 a 150

Los datos trmicos

Datos y especificaciones estn sujetos a cambios sin previo aviso 200227032

AP15N03GH / J

Caractersticas elctricas @ Tj = 25 C (a menos que se especifique lo contrario)

Fuente-Drain Diodo Smbolo de condiciones de prueba parmetro min. Typ. Max. Unidades La fuente de corriente continua (Diodo Cuerpo) VD = VG = 0 V, VS = 1.3V - 15 A ISM Fuente Pulsada de corriente (Diodo Cuerpo) 1 - 50 A VSD 2 Remitir tensin Tj = 25 , ES = 15A, VGS = 0 V - 1,3 V

Notas: 1.Pulse anchura limitada por el rea de operacin segura. 2.Pulse anchura <ciclo de 300us, deber <2%. AP15N03GH / J

50 T C = 25 C

V G = 10V V G = 8,0 V 40 T C = 150 C

30

V G = 10V V G = 8,0 V

30 V G = 6,0 V

V G = 6,0 V

20

10 V 10 G = 4,0 V

V G = 4,0 V

0 01234567 V DS, de drenaje a la fuente de voltaje (V) 0 01234567 V DS, de drenaje a la fuente de voltaje (V)

Fig. 1. Caractersticas tpicas de salida de la figura 2. Caractersticas tpicas de salida

90 I D = 8A 80 T C = 25 C 1.8

1.6

I D = 8A

1.4 70 1.2 60 1.0

50 0.8

40 2 3 4 5 6 7 8 9 10 11 0.6

-50 0 50 100 150 o V GS (V) T j, temperatura de la unin (C)

La figura 3. En Resistencia v.s. Puerta de voltaje Fig. 4. Normalizado En Resistencia v.s. Temperaturas de la conexin

AP15N03GH / J

20 40

15 30

10 20

5 10

0 25 50 75 100 125 150 o 0 0 50 100 150 o T C, la temperatura de la caja (C) T C, la temperatura de la caja (C)

La figura 5. Mximo Consumo de corriente v.s. La figura 6. La disipacin de energa tpico Caso de temperatura

100 1

TRABAJO = 0,5

10us 0.2

10 100us

0.1 0.1 0,05

1ms

0,02 0,01

Pulso simple

PDM t T

Tc = 25 C

10 ms

Factor de servicio = t / T Pico Tj = x PDM Rthjc + TC Pulso nico 1

Corriente continua 0,01

1 10 100 V DS (V) 0,00001 0,0001 0,001 0,01 0,1 1 t, ancho de pulso (s)

La figura 7. rea mxima de operacin segura la figura 8. A partir de impedancia trmica transitoria

AP15N03GH / J

16 1000 f = 1.0MHz

I D = 8A 12 V DS = 16V V DS = 20V 10 V DS = 24

8 100 6

0 0 1 2 3 4 5 6 7 8 9 10 Q G, puerta de carga total (NC)

10

1 6 11 16 21 26 31 V DS (V)

Fig. 9. Caractersticas Puerta de carga Fig. 10. Caractersticas tpicas de capacitancia

100 3

10 2 T j = 150 C T j = 25 C

11

0.1

0,1 0,3 0,5 0,7 0,9 1,1 1,3 1,5 0 -50 0 50 100 150 o V SD (V) T j, temperatura de la unin (C)

Fig. 11. Delantero Tpico de la figura 12. Tensin umbral de la puerta v.s. Diodo inverso temperatura de la unin

AP15N03GH / J

VDS RD 90%

VDS D En el osciloscopio

RG G

+S 10 V -

VGS 0.5x NOMINAL VDS

VGS 10%

td (a) tr td (off) tf

Fig. 13. Tiempo de conmutacin de circuito Fig. 14. El cambio de forma de onda de tiempo

VG

VDS DG

En el osciloscopio 0,8 x NOMINAL VDS

QG 5V QGS Gambito de Dama

S + 1 ~ 3 mA Yo G

VGS

Yo D

Carga Q

Fig. 15. Puerta de carga del circuito Fig. 16. Puerta de carga de forma de onda