PD - 91343B

IRFP140N
HEXFET Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
D

VDSS = 100V
G S

RDS(on) = 0.052 ID = 33A

TO-247AC

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10VU Continuous Drain Current, VGS @ 10VU Pulsed Drain Current QU Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy RU Avalanche CurrentQ Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt SU Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.

Max.
33 23 110 140 0.91 20 300 16 14 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Min.

Typ.
0.24

Max.
1.1 40

Units
C/W

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1
10/5/98

IRFP140N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. 100 2.0 11

Typ. Max. Units Conditions V VGS = 0V, ID = 250A 0.11 V/C Reference to 25C, ID = 1mAU 0.052 VGS = 10V, ID = 16A T 4.0 V VDS = VGS, ID = 250A S VDS = 50V, ID = 16AU 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 94 ID = 16A 15 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 TU 8.2 VDD = 50V 39 ID = 16A ns 44 RG = 5.1 33 RD = 3.0, See Fig. 10 TU Between lead, 5.0 6mm (0.25in.) nH from package 13 and center of die contact 1400 VGS = 0V 330 pF VDS = 25V 170 = 1.0MHz, See Fig. 5U

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Q rr

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) QU Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge

Min. Typ. Max. Units 170 1.1 33 A 110 1.3 250 1.6 V ns C

Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V T TJ = 25C, IF = 16A di/dt = 100A/s TU

G S

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

S ISD 16A, di/dt 210A/s, VDD V(BR)DSS,

TJ 175C

R VDD = 25V, starting TJ = 25C, L = 2.0mH

RG = 25, IAS = 16A. (See Figure 12)

T Pulse width 300s; duty cycle 2%. U Uses IRF540N data and test conditions.

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IRFP140N
1000

1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTO M 4.5V TOP

I , D rain-to-S ourc e C urren t (A ) D

I , D rain-to-Source Current (A ) D

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

100

100

10

10

4.5 V

4.5V

1 0.1 1

20 s P U LS E W ID TH TC = 2 5C
10

1 0.1 1

2 0 s P U L S E W ID TH T C = 17 5C
10 100

100

V D S , D rain-to-S ourc e Voltage (V)

V DS , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

R D S (on) , Drain-to-S ource O n Resistance (N orm alized)

I D = 2 7A

I D , D ra in -to-S ourc e C urrent (A)

2.5

100

2.0

TJ = 2 5 C TJ = 1 75 C

1.5

10

1.0

0.5

1 4 5 6 7

V DS = 5 0V 2 0 s P U L S E W ID TH
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

V G S = 10 V

100 120 140 160 180

V G S , G ate-to -So urce Voltag e (V)

T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRFP140N
2400

2000

1600

1200

C oss

V G S , G ate-to-S ource V oltage (V )

V GS C iss C rs s C iss C o ss

= = = =

0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d

20

I D = 16 A

16

V D S = 80 V V D S = 50 V V D S = 20 V

C , Capacitance (pF)

12

800

C rss
400

0 1 10 100

0 0 20 40

FO R TE S T C IR C U IT S E E FIG U R E 1 3
60 80 100

V D S , D rain-to-S ourc e V oltage (V )

Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

I S D , Reverse D rain C urrent (A)

O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n)

I D , D rain Current (A )

100 10 s

100

100 s 10 1m s

TJ = 1 75 C T J = 2 5C

10 0.4 0.8 1.2 1.6

V G S = 0V

1 1

T C = 25 C T J = 17 5C S ing le P u lse
10

10m s

A
100 1000

2.0

V S D , S ourc e-to-D rain V oltage (V )

V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRFP140N
35

VDS VGS

RD

30

D.U.T.
+

RG

I D , Drain Current (A)

- VDD

25

10V
20
Pulse Width 1 s Duty Factor 0.1 %

15

Fig 10a. Switching Time Test Circuit

VDS 90%

10

0 25 50 75 100 125 150 175

TC , Case Temperature ( C)

10% VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Case Temperature

10

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 P DM t1 t2

0.01 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP140N
L VDS D.U.T. RG + V - DD
10 V

700

E A S , S ingle P ulse A valanche E nergy (m J)

TO P
600

B O TTO M
500

ID 6 .6A 1 1A 16 A

IAS tp
0.01

400

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp VDD VDS

300

200

100

V D D = 25 V
25 50 75 100 125 150

A
175

S tarting T J , J unc tion T em perature (C )

IAS

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F

.3F

10 V
QGS VG QGD
VGS
3mA

D.U.T.

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFP140N
Peak Diode Recovery dv/dt Test Circuit
D.U.T

S
+

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

R
-

Q
RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS

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IRFP140N
Package Outline
TO-247AC Outline Dimensions are shown in millimeters (inches)
1 5.90 (.62 6) 1 5.30 (.60 2) -B3.65 (.1 43) 3.55 (.1 40) 0.25 (.0 10) M -A 5 .50 (.217) 20 .30 (.800) 19 .70 (.775) 1 2 3 -C 14.8 0 (.5 83) 14.2 0 (.5 59) 4.3 0 (.1 70) 3.7 0 (.1 45)
L EA D A S SIG N M E N TS 1 2 3 4 G A TE D R AIN S O UR C E D R AIN

-D D B M 5 .30 (.209 ) 4 .70 (.185 ) 2.5 0 (.08 9) 1.5 0 (.05 9) 4

2X

5.50 (.21 7) 4.50 (.17 7)

N O TES : 1 DIM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 1 98 2. 2 CO N TR O LL IN G DIM EN S IO N : IN CH . 3 CO N F O RM S TO JED E C O U TLINE TO -2 47 -A C .

2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.2 15) 2X

1.4 0 (.0 56) 3 X 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.133 ) 3 .00 (.118 ) C A S

0.80 (.03 1) 3X 0.40 (.01 6) 2.60 (.1 02) 2.20 (.0 87)

Part Marking Information

TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LO T CO DE 3A1Q
A

IN TE R N A TIO N A L R E C T IF IE R LO G O ASSEM BLY LOT CODE

PAR T NU MBER IR F P E 3 0 3A 1Q 9302 D ATE C O DE (Y Y W W ) YY = YEAR W W W EEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/98

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/