IRGR4045DPBF
IRGR4045DPBF
IRGR4045DPBF
E
Benefits G
High Efficiency in a Wide Range of Applications D-Pak
Suitable for a Wide Range of Switching Frequencies due IRGR4045DPbF
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability G C E
Excellent Current Sharing in Parallel Operation Gate Colletor Emitter
Low EMI
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October 10, 2012
IRGR4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions R ef . F i g
Etotal Total Switching Loss — 178 229 E nergy los s es include tail and diode revers e recovery
Etotal Total Switching Loss — 329 — E nergy los s es include tail and diode revers e recovery WF 1,WF 2
tf Fall time — 32 —
Cies Input Capacitance — 350 — VGE = 0V 23
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 500V, Vp =600V CT 2
Irr Peak Reverse Recovery Current — 12 — A VGE = 15V, Rg = 47, L=1mH, LS=150nH WF 3
Notes:
VCC = 80% (VCES ), VGE = 15V, L = 1.0mH, RG = 47
Pulse width limited by max. junction temperature.
R is measured at T J approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
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IRGR4045DPbF
14 80
12 70
60
10
50
8
Ptot (W)
IC (A)
40
6
30
4
20
2 10
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 100
10μsec
10 100μsec 10
IC (A)
IC A)
DC
1 1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 0
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
20 20
Top V = 18V
GE
15 V = 15V
15 Top V = 18V
GE GE
VGE = 12V V = 15V
GE
V = 12V
V = 10V GE
GE V = 10V
ICE (A)
ICE (A)
5 5
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs TJ = 25°C; tp = 80μs
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IRGR4045DPbF
20 20
Top V = 18V
GE
V = 15V
GE 18
V = 12V
GE
V
GE
= 10V 16
15 Bottom V
GE
= 8.0V
-40°C
14 25°C
175°C
12
ICE (A)
IF (A)
10 10
8
6
5
4
2
0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80μs tp = 80μs
10 10
8 8
VCE (V)
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
10 20
18
T J = 25°C
IC, Collector-to-Emitter Current (A)
8 16 T J = 175°C
14
ICE = 3.0A
6 ICE = 6.0A 12
VCE (V)
ICE = 12A 10
4 8
6
2 4
2
0 0
5 10 15 20 4 6 8 10 12 14 16
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IRGR4045DPbF
400 1000
350
tdOFF
300
250
tF
200 EOFF tdON
10
150
tR
100 EON
50 1
0 2 4 6 8 10 12 14 2 4 6 8 10 12 14
IC (A) IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. TJ = 175°C; L=1mH; VCE= 400V
RG= 47; VGE= 15V
220 1000
200
EOFF
180 tdOFF
Swiching Time (ns)
100
160
Energy (μJ)
tF
140 EON
tdON
120
10
100 tR
80
60 1
0 25 50 75 100 125 0 25 50 75 100 125
Rg () RG ()
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
30 22
20
25
RG = 10 18
20
16
IRR (A)
IRR (A)
15 RG = 22 14
12
10 RG = 47
10
RG = 100
5
8
0 6
2 4 6 8 10 12 14 0 25 50 75 100 125
IF (A) RG (
Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C TJ = 175°C; IF = 6.0A
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IRGR4045DPbF
20 1200
18
1000
12A
16
10
22
800
QRR (nC)
14
IRR (A)
47
12 600 6.0A
10 100
400
8 3.0A
6 200
0 200 400 600 800 1000 1200 0 500 1000 1500
Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V; TJ = 175°C
ICE= 6.0A; TJ = 175°C
350 20 50
300
Tsc
RG = 10 15 40
250 Isc
Energy (μJ)
Current (A)
Time (μs)
RG = 22
200 10 30
RG = 47
150
RG = 100 5 20
100
50 0 10
2 4 6 8 10 12 14 8 10 12 14 16 18
IF (A) VGE (V)
Fig. 21 - Typical Diode ERR vs. IF Fig. 22- Typ. VGE vs. Short Circuit Time
TJ = 175°C VCC=400V, TC =25°C
1000 16
Cies V CES = 400V
14
VGE, Gate-to-Emitter Voltage (V)
V CES = 300V
12
100
Capacitance (pF)
10
8
Coes
6
10
Cres 4
1 0
0 100 200 300 400 500 0 2 4 6 8 10 12 14
VCE (V) Q G, Total Gate Charge (nC)
Fig. 23- Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 6.0A, L=600μH
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IRGR4045DPbF
10
0.20
0.10 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.1 0.05 J C 0.0301 0.000004
J
0.02 1 0.7200 0.000067
2 3 4
1 2 3 4
0.01 0.7005 0.000898
Ci= iRi 0.4479 0.005416
SINGLE PULSE Ci iRi
0.01 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
Thermal Response ( Z thJC )
0.20
1
0.10
0.05 R1 R2 R3 R4 Ri (°C/W) i (sec)
R1 R2 R3 R4
J C 0.2056 0.000019
J
0.02
1.4132 0.000095
1 2 3 4
1 2 3
0.1 0.01 4 3.3583 0.001204
Ci= iRi 1.8245 0.009127
Ci iRi
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRGR4045DPbF
L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K
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IRGR4045DPbF
600 12 600 30
500 10 500 tr 25
TEST
CURRENT
400 8 400 20
tf 90% test
300 6 300 15
VCE (V)
current
VCE (V)
90% ICE
200 4 200 10
10% test
5% ICE current
100 2 100 5
5% VCE
5% VCE
0 0 0 0
Eoff Loss
Eon Loss
-100 -2 -100 -5
-0.2 0 0.2 0.4 0.6 0.8 1 4.3 4.5 4.7
time(µs) time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4
100 15 500 80
450 VCE 70
0 QRR 10
400 60
t RR
-100 5 350 50
-200 0
300 40
Vce (V)
VF (V)
10% 250 30
-300 Peak
Peak
-5
ICE
IRR
IRR 200 20
-400 -10 150 10
100 0
-500 -15
50 -10
-600 -20 0 -20
-0.05 0.05 0.15 0.25 -2 -1 0 1 2 3 4 5 6 7 8
time (µS) Time (uS)
WF.3- Typ. Diode Recovery Waveform WF.4- Typ. Short Circuit Waveform
@ TJ = 175°C using CT.4 @ TJ = 25°C using CT.3
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IRGR4045DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR4045DPbF
TR TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2012
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