FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT

September 2013

FGPF15N60UNDF
600 V, 15 A
Short Circuit Rated IGBT
Features General Description
• Short Circuit Rated 10us Using advanced NPT IGBT technology, Fairchild’s the NPT
• High Current Capability IGBTs offer the optimum performance for low-power inverter-
• High Input Impedance driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
• Fast Switching
motor control and home appliances.
• RoHS Compliant

Applications
• Sewing Machine, CNC, Home Appliances, Motor Control

G
G C E
TO-220F
(Retractable) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC 30 A
IC
Collector Current @ TC = 100oC 15 A
ICM (1) Pulsed Collector Current o 45 A
@ TC = 25 C
Diode Forward Current @ TC = 25oC 15 A
IF
o
Diode Forward Current @ TC = 100 C 7.5 A
Maximum Power Dissipation @ TC = 25oC 42 W
PD
Maximum Power Dissipation @ TC = 100oC 17 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 3.0 oC/W

oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 4.9
o
RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 62.5 C/W

Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGPF15N60UNDF FGPF15N60UNDF TO-220F - - 50ea

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±10 μA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 15 mA, VCE = VGE 5.5 6.8 8.5 V
IC = 15 A, VGE = 15 V - 2.2 2.7 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 15 A, VGE = 15 V,
- 2.7 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 619 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 80 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 24 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 9.3 - ns
tr Rise Time - 9.8 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 15 A, - 54.8 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 9.9 12.8 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 0.37 - mJ
Eoff Turn-Off Switching Loss - 0.067 - mJ
Ets Total Switching Loss - 0.44 - mJ
td(on) Turn-On Delay Time - 8.9 - ns
tr Rise Time - 9.9 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 15 A, - 56.6 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 13.2 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 0.54 - mJ
Eoff Turn-Off Switching Loss - 0.11 - mJ
Ets Total Switching Loss - 0.65 - mJ
VCC = 350 V,
Tsc Short Circuit Withstand Time RG = 100 Ω, VGE = 15 V, 10 - - μs
TC = 150oC

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Qg Total Gate Charge - 43 - nC

VCE = 400 V, IC = 15 A,
Qge Gate to Emitter Charge - 6 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 26 - nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 1.6 2.2
VFM Diode Forward Voltage IF = 15 A V
TC= 125oC - 1.5 -
TC = 25oC - 82.4
trr Diode Reverse Recovery Time ns
TC= 125oC - 142 -
IF =15 A, dIF/dt = 200 A/μs
TC = 25oC - 213 -
Qrr Diode Reverse Recovery Charge nC
o
TC= 125 C - 541 -

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

80 80
o o
TC = 25 C 20V 17V TC = 125 C 20V 17V
70 70
15V 15V
Collector Current, IC [A]

Collector Current, IC [A]

60 60

50 50
VGE = 12V

40 40 VGE = 12V

30 30

20 20

10 10

0 0
0.0 1.5 3.0 4.5 6.0 7.5 9.0 0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
80 80
Common Emitter
Common Emitter 70 VCE = 20V
70
VGE = 15V o
TC = 25 C
o
TC = 25 C 60
Collector Current, IC [A]

Collector Current, IC [A]

60 TC = 125 C
o
o
TC = 125 C
50 50

40 40

30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 0 3 6 9 12 15
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.5
20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

VGE = 15V o
Collector-Emitter Voltage, VCE [V]

4.0 TC = 25 C
30A 16
3.5

3.0 12

15A
2.5
8
2.0
15A
IC = 7.5A 4 30A
1.5
IC = 7.5A
1.0
25 50 75 100 125 0
o 4 8 12 16 20
Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics
20 3000
Common Emitter
o
Collector-Emitter Voltage, VCE [V]

TC = 25 C Cies
1000
16
Coes

Capacitance [pF]
12
Cres

100
8

15A
30A Common Emitter
4 VGE = 0V, f = 1MHz
IC = 7.5A o
TC = 25 C

0 10
4 8 12 16 20 1 10 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

15 100
200V
10μs
Gate-Emitter Voltage, VGE [V]

12 400V
Collector Current, Ic [A]

VCC = 100V 10
100μs
9
1ms
1
10 ms
6
Single Nonrepetitive DC
0.1 Pulse TC = 25oC
3
Common Emitter Curves must be derated
o linearly with increase
TC = 25 C in temperature
0 0.01
0 5 10 15 20 25 30 35 40 45 50 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
50 1000
Common Emitter
40 VCC = 400V, VGE = 15V
IC = 15A
30 o
TC = 25 C
Switching Time [ns]
Switching Time [ns]

TC = 125 C
o td(off)
20 100
tr

Common Emitter
td(on) VCC = 400V, VGE = 15V
10
IC = 15A
o
tf
TC = 25 C
10
o
TC = 125 C
5
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Gate Resistance, RG [Ω] Gate Resistance, RG [Ω]

©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
50 300
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
100 TC = 125 C
o
Switching Time [ns]

Switching Time [ns]

td(off)
10
td(on)

Common Emitter tf
tr VGE = 15V, RG = 10Ω
o
TC = 25 C
10
o
TC = 125 C

1 5
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss vs. Figure 16. Switching Loss vs

Gate Resistance Collector Current
1000 3000

Eon Eon
1000
Switching Loss [uJ]
Switching Loss [μJ]

Eoff Eoff
100
Common Emitter
100
VCC = 400V, VGE = 15V Common Emitter
IC = 15A VGE = 15V, RG = 10Ω
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
10
10
0 10 20 30 40 50 60 0 5 10 15 20 25 30 35
Gate Resistance, RG [Ω] Collector Current, IC [A]
Figure 17. Turn off Switching Figure 18. Forward Characteristics
SOA Characteristics
100
30
Collector Current, IC [A]

Forward Current, IF [A]

10 o
o
TJ = 75 C
TJ = 125 C
10 TJ = 25 C
o

Safe Operating Area

o
VGE = 15V, TC = 125 C
1 1
1 10 100 1000
0 1 2 3
Collector-Emitter Voltage, VCE [V] Forward Voltage, VF [V]

©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics

Figure 19. Reverse Current Figure 20. Stored Charge

100 0.7
o
TC = 25 C
o
TJ = 125 C 0.6 TC = 125oC

Stored Recovery charge, Qrr [nC]

10 200A/μs
Reverse Current , IR [μA]

0.5

1
o
0.4
TJ = 75 C

0.3 diF/dt = 100A/μs

0.1

0.2 200A/μs
o
0.01 TJ = 25 C
0.1 diF/dt = 100A/μs

1E-3 0.0
50 200 400 600 0 2 4 6 8 10 12 14 16 18 20
Reverse Voltage, VR [V] Forward Current, IF [A]

Figure 21. Reverse Recovery Time

200
o
TC = 25 C
diF/dt = 100A/μs
Reverse Recovery Time, trr [ns]

o
TC = 125 C
150
200A/μs

diF/dt = 100A/μs
100
200A/μs

50

0
0 2 4 6 8 10 12 14 16 18 20
Forward Current, IF [A]

Figure 22.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

5 0.5
0.5
0.2
Thermal Response [Zthjc]

1 0.2
0.1 0.1
0.1
0.05
0.05 PDM
0.02
t1
0.1 0.01
0.02 t2
Duty
PDM Factor, D = t1/t2
single
0.01 pulse
Peak Tj =tPdm x Zthjc + TC
1
0.01
0.01 single pulse t2
1E-5 1E-4 1E-3 0.01 0.1 Duty Factor,1D = t1/t2 10
Peak Tj = Pdm x Zthjc + TC
Rectangular Pulse Duration [sec]
0.005
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Mechanical Dimensions

Figure 23. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimensions in Millimeters

©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
 FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
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Rev. I66

©2012 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGPF15N60UNDF Rev. C2
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FGPF15N60UNDF