GB15B60KD
GB15B60KD
IRGB15B60KD
IRGS15B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
www.DataSheet4U.com • Low Diode VF. IC = 15A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA. G
• Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
E
n-channel VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
www.irf.com 1
8/18/04
IRG/B/S/SL15B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 15A, VGE = 15V 5, 6,7
––– 2.05 2.50 V IC = 15A, VGE = 15V TJ = 125°C 9, 10,11
––– 2.10 2.60 IC = 15A, VGE = 15V TJ = 150°C
www.DataSheet4U.com VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9, 10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance ––– 10.6 ––– S VCE = 50V, IC = 20A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 5.0 150 µA VGE = 0V, VCE = 600V
––– 500 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.20 1.45 IC = 15A 8
––– 1.20 1.45 V IC = 15A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
35 240
30
200
25
160
www.DataSheet4U.com
20
Ptot (W)
IC (A)
120
15
80
10
8
5 40
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 100
10 µs
10 10
IC (A)
IC A)
100 µs
1 1
1ms
DC
0.1 0
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)
ICE (A)
www.DataSheet4U.com
50 50
40 40
30 30
20 20
10 10
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 300µs TJ = 25°C; tp = 300µs
100 60
IF (A)
50 30
40
20
30
20
10
10
0 0
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE (V) VF (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 300µs tp = 80µs
4 www.irf.com
IRG/B/S/SL15B60KD
20 20
18 18
16 16
14 14
12 ICE = 5.0A 12 ICE = 5.0A
VCE (V)
VCE (V)
www.DataSheet4U.com
10 ICE = 15A 10 ICE = 15A
ICE = 30A ICE = 30A
8 8
6 6
4 4
2 2
0 0
4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 160
18 140 T J = 25°C
16 T J = 150°C
120
14
100
12 ICE = 5.0A
VCE (V)
ICE (A)
10 ICE = 15A 80
ICE = 30A
8 60
6
40
4 T J = 150°C
20 T J = 25°C
2
0 0
4 6 8 10 12 14 16 18 20 0 5 10 15 20
VGE (V) VGE (V)
1600
1400
tdOFF
1000
www.DataSheet4U.com EON 100
800
600
tdON
400
tF
200
0 tR
10
0 10 20 30 40 50
0 10 20 30 40 50
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V RG= 22Ω; VGE= 15V
900 1000
tdOFF
800
EOFF
700
Swiching Time (ns)
600 EON
Energy (µJ)
500
100
400 tdON
300 tR
tF
200
100
0 10
0 50 100 150 0 50 100 150
R G (Ω) R G (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 600V
ICE= 15A; VGE= 15V ICE= 15A; VGE= 15V
6 www.irf.com
IRG/B/S/SL15B60KD
35 40
RG = 10 Ω
35
30
30
RG = 22 Ω
25
25
IRR (A)
IRR (A)
RG = 47 Ω
www.DataSheet4U.com 20 20
RG = 68 Ω
15
15
RG = 100 Ω
10
10
5
5 0
0 10 20 30 40 50 0 20 40 60 80 100 120
IF (A) RG (Ω)
Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 15A
35 3000
10Ω 40A
30
22Ω
2500 47Ω 30A
68 Ω
25
2000 100 Ω
15A
Q RR (µC)
20
IRR (A)
1500
15
10A
1000
10
500
5
0
0
0 500 1000 1500
0 500 1000 1500
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 15A; TJ = 150°C
www.irf.com 7
IRG/B/S/SL15B60KD
1000
900 10Ω
800
600
47 Ω
www.DataSheet4U.com 500
100 Ω
400
300
200
100
0
0 10 20 30 40
IF (A)
10000 16
14
300V
12
400V
Cies
Capacitance (pF)
1000 10
VGE (V)
6
100
Coes 4
Cres 2
0
10
0 20 40 60
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 15A; L = 600µH
8 www.irf.com
IRG/B/S/SL15B60KD
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
Ri (°C/W) τi (sec)
R1 R2 R3
R1 R2 R3
www.DataSheet4U.com 0.05 τJ τC
τJ τ
0.231 0.000157
τ1 τ2 τ3
0.01 τ1 τ2 τ3 0.175 0.000849
0.02
0.01 Ci= τi/Ri 0.201 0.011943
Ci= i/Ri
10
Thermal Response ( Z thJC )
1 D = 0.50
0.20
0.10 R1 R2
R1 R2 Ri (°C/W) τi (sec)
0.1 0.05 τJ τC
τJ τ 1.164 0.000939
τ1 τ2
0.01 τ1 τ2 0.9645 0.035846
0.02
Ci= τi/Ri
Ci= i/Ri
0.01
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
www.irf.com 9
IRG/B/S/SL15B60KD
L
L
VCC 80 V +
DUT DUT
0 - 480V
Rg
www.DataSheet4U.com 1K
diode clamp /
DUT
Driver L
- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg
VCC
R=
ICM
DUT VCC
Rg
tF
500 25
400 40
400 20
9 0 % IC E
300 30
90% tes t current
www.DataSheet4U.com 300 15
V CE (V)
V CE (V)
ICE (A)
ICE (A)
5 % IC E
200 20
200 10 tes t current
5% V CE 100 10
tR 10% tes t current
100 5
5% V C E
0 0
0 0
E o ff L o s s Eon Los s
-1 0 0 -5 -100 -10
-0 .5 0 .0 0.5 1.0 1 .5 -0.2 -0.1 0.0 0.1
t (µ S ) t (µS )
0 10 400 V CE 200
tR R
-1 0 0 0 300 150
IC E
VCE (V)
VCE (V)
ICE (A)
10 % ICE (A)
-2 0 0 Pe a k -1 0 200 100
IR R
Pe a k
IR R
-3 0 0 -2 0 100 50
-4 0 0 -3 0 0 0
-5 0 0 -4 0 -1 0 0 -5 0
-0 . 0 6 0 .0 4 0 .1 4 -1 0 0 10 20 30
t (µ S ) t (µ S )
E XAMPL E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C
12 www.irf.com
IRG/B/S/SL15B60KD
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
www.DataSheet4U.com
OR
PAR T NUMB E R
INT E RNAT IONAL
RE CT IF IE R F 530S
LOGO
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
AS S E MB LY PRODUCT (OPT IONAL)
L OT CODE YE AR 0 = 2000
WE E K 02
A = AS S E MB LY S IT E CODE
www.irf.com 13
IRG/B/S/SL15B60KD
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
www.DataSheet4U.com
OR
PART NUMBE R
INT E R NAT IONAL
RE CT IF IE R
L OGO
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
AS S E MB L Y PR ODU CT (OPT IONAL )
L OT CODE YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
14 www.irf.com
IRG/B/S/SL15B60KD
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)
www.DataSheet4U.com
FEED DIRECTION 1.85 (.073) 11.60 (.457)
1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
www.irf.com 15