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    Irgph40m Irf

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    สุทธิชัย การด่วน

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    Irgph40m Irf

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    สุทธิชัย การด่วน
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    IRGPH40M-IRF

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    Irgph40m Irf

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    สุทธิชัย การด่วน

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    Previous Datasheet Index Next Data Sheet

    Preliminary Data Sheet PD - 9.1029

    IRGPH40M
    INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated
    Fast IGBT
    Features C
    • Short circuit rated - 10µs @ 125°C, V GE = 15V
    • Switching-loss rating includes all "tail" losses
    VCES = 1200V
    • Optimized for medium operating frequency (1 to
    10kHz) VCE(sat) ≤ 3.4V
    G

    @VGE = 15V, I C = 18A


    E
    n-channel
    Description
    Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
    higher usable current densities than comparable bipolar transistors, while at
    the same time having simpler gate-drive requirements of the familiar power
    MOSFET. They provide substantial benefits to a host of high-voltage, high-
    current applications.

    These new short circuit rated devices are especially suited for motor control
    and other applications requiring short circuit withstand capability.
    TO-247AC
    Absolute Maximum Ratings
    Parameter Max. Units
    VCES Collector-to-Emitter Voltage 1200 V
    IC @ T C = 25°C Continuous Collector Current 31
    IC @ T C = 100°C Continuous Collector Current 18 A
    ICM Pulsed Collector Current 62
    ILM Clamped Inductive Load Current 62
    tsc Short Circuit Withstand Time 10 µs
    VGE Gate-to-Emitter Voltage ±20 V
    EARV Reverse Voltage Avalanche Energy 15 mJ
    PD @ T C = 25°C Maximum Power Dissipation 160 W
    PD @ T C = 100°C Maximum Power Dissipation 65
    TJ Operating Junction and -55 to +150
    TSTG Storage Temperature Range °C
    Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
    Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

    Thermal Resistance
    Parameter Min. Typ. Max. Units
    RθJC Junction-to-Case — — 0.77
    RθCS Case-to-Sink, flat, greased surface — 0.24 — °C/W
    RθJA Junction-to-Ambient, typical socket mount — — 40
    Wt Weight — 6 (0.21) — g (oz)

    Revision 1
    C-469

    To Order
    Previous Datasheet Index Next Data Sheet

    IRGPH40M
    Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
    Parameter Min. Typ. Max. Units Conditions
    V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, I C = 250µA
    V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A
    ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, I C = 1.0mA
    VCE(on) Collector-to-Emitter Saturation Voltage — 2.3 3.4 IC = 18A
    — 3.0 — V IC = 31A V GE = 15V
    — 2.8 — IC = 18A, T J = 150°C
    VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
    ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
    gfe Forward Transconductance 4.0 10 — S VCE = 100V, I C = 18A
    ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, V CE = 1200V
    — — 3500 VGE = 0V, V CE = 1200V, T J = 150°C
    IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

    Switching Characteristics @ TJ = 25°C (unless otherwise specified)


    Parameter Min. Typ. Max. Units Conditions
    Qg Total Gate Charge (turn-on) — 50 75 IC = 18A
    Qge Gate - Emitter Charge (turn-on) — 11 21 nC VCC = 400V
    Qgc Gate - Collector Charge (turn-on) — 15 30 VGE = 15V
    td(on) Turn-On Delay Time — 30 — TJ = 25°C
    tr Rise Time — 21 — ns IC = 18A, V CC = 960V
    td(off) Turn-Off Delay Time — 400 890 VGE = 15V, R G = 10Ω
    tf Fall Time — 390 740 Energy losses include "tail"
    Eon Turn-On Switching Loss — 1.1 —
    Eoff Turn-Off Switching Loss — 6.3 — mJ
    Ets Total Switching Loss — 7.4 14
    tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, T J = 125°C
    VGE = 15V, R G = 10Ω, VCPK < 1000V
    td(on) Turn-On Delay Time — 28 — TJ = 150°C,
    tr Rise Time — 24 — ns IC = 18A, V CC = 960V
    td(off) Turn-Off Delay Time — 600 — VGE = 15V, R G = 10Ω
    tf Fall Time — 870 — Energy losses include "tail"
    Ets Total Switching Loss — 15 — mJ
    LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
    Cies Input Capacitance — 1360 — VGE = 0V
    Coes Output Capacitance — 100 — pF VCC = 30V
    Cres Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz

    Notes:
    Repetitive rating; V GE=20V, pulse width Repetitive rating; pulse width limited Pulse width 5.0µs,
    limited by max. junction temperature. by maximum junction temperature. single shot.

    VCC=80%(V CES), VGE=20V, L=10µH, Pulse width ≤ 80µs; duty factor ≤ 0.1%.
    R G= 10Ω

    Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC

    C-470

    To Order

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