PD 91453B

IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating VCES = 600V

frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V
G
parameter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 12A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-cha nn el
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
www.DataSheet4U.com • Designed to be a "drop-in" replacement for equivalent
TO-220AB
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current Q 92 A
ILM Clamped Inductive Load Current R 92
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 100
W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ------ ------ 1.2
RθJC Junction-to-Case - Diode ------ ------ 2.5 °C/W
RθCS Case-to-Sink, flat, greased surface ------ 0.50 ------
RθJA Junction-to-Ambient, typical socket mount ----- ----- 80
Wt Weight ------ 2 (0.07) ------ g (oz)
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IRG4BC30UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.95 2.1 IC = 12A VGE = 15V
---- 2.52 ---- V IC = 23A See Fig. 2, 5
---- 2.09 ---- IC = 12A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 3.1 8.6 ---- S VCE = 100V, IC = 12A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
---- 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 50 75 IC = 12A
Qge Gate - Emitter Charge (turn-on) ---- 8.1 12 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 18 27 VGE = 15V
td(on) Turn-On Delay Time ---- 40 ---- TJ = 25°C
tr Rise Time ---- 21 ---- ns IC = 12A, VCC = 480V
td(off) Turn-Off Delay Time ---- 91 140 VGE = 15V, RG = 23Ω
tf Fall Time ---- 80 130 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.38 ---- diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.16 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 0.54 0.9
td(on) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 22 ---- ns IC = 12A, VCC = 480V
td(off) Turn-Off Delay Time ---- 120 ---- VGE = 15V, RG = 23Ω
tf Fall Time ---- 180 ---- Energy losses include "tail" and
Ets Total Switching Loss ---- 0.89 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 1100 ---- VGE = 0V
Coes Output Capacitance ---- 73 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
t rr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
di (rec)M/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.
During tb ---- 120 ---- TJ = 125°C 17

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 IRG4BC30UD
16

D uty c yc le : 5 0%
T J = 12 5° C
T s in k = 90 °C
G a te d rive a s s pe c ified
12 T urn -o n losse s in clud e
Load Current ( A )

effects of re verse re co very

Pow e r D is sipatio n = 21 W

6 0 % o f ra te d
8 vo l ta g e

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , C o lle cto r-to -E m itte r C u rre n t (A )
I C , C olle cto r-to -E m itte r C u rre n t (A )

TJ = 2 5 ° C

T J = 1 5 0 °C T J = 1 5 0 °C
10 10

T J = 2 5 °C

1 1

VG E = 1 5 V V CC = 10V
2 0 µ s P U L S E W ID T H A 5 µ s P U L S E W ID T H A
0.1 0.1
0.1 1 10 5 6 7 8 9 10 11 12

V C E , C o lle cto r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC30UD
M a xim u m D C C o lle c to r C u rre n t (A

25 3.0
V GE = 15V VGE = 15V

V C E , C ollector-to-Em itter Volta ge (V)

8 0 µ s P U L S E W ID T H IC = 2 4 A

20

2.5
15

IC = 1 2 A
10
2.0

5
I C = 6 .0 A

0
A 1.5 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , C a s e Te m p e ra tu re (°C ) T J , Ju n c tio n T e m p e ra tu re (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage

Case Temperature vs. Junction Temperature

10
Therm al Response (Z thJ C )

1
D = 0.5 0

0.20
PD M
0.10
0 .1
0 .05 t
1
0 .0 2 t2
0 .0 1 S IN G L E PU LS E
(T H E R M AL RE S PO N SE ) N o te s :
1 . D u ty f ac t or D = t / t
1 2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10

t 1 , R ectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC30UD
2000 20
V GE = 0V , f = 1MHz VCE = 400V

V G E , G a te -to -E m itte r V o lta g e (V )

C ie s = C g e + C g c , C ce S H O R TE D IC = 12A
C re s = C gc
1600 C oes = C ce + C g c 16
C, C apa cita nc e (pF )

C ie s

1200 12

800
C oes 8

400
C re s 4

0
A 0 A
1 10 100 0 10 20 30 40 50

V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

10
0.60 R G = 23Ω
V C C = 480V
V G E = 15V V G E = 15V
V C C = 480V
Total Switchig Losses (mJ)

T J = 25°C
Total Switchig Losses (mJ)

0.58 I C = 12A

I C = 24A

0.56

1 I C = 12A

0.54
I C = 6.0A

0.52

A 0.1 A
0.50
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

R G , Gate Resistance ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC30UD
2.0 1000
RG = 23 Ω VGGE E= 2 0V
TJ = 150°C T J = 12 5 °C
V CC = 480V
Total Switchig Losses (mJ)

I C , C ollector-to-E m itter C urrent (A )

1.6 V GE = 15V
100

1.2 S A FE O P E R A TIN G A R E A
10

0.8

1
0.4

0.0 A 0 .1
0 10 20 30 1 10 100 1000
I C , Collector-to-Emitter Current (A ) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Instan tan eou s Fo rwa rd C urre nt - I F (A )

TJ = 15 0°C

10 TJ = 12 5°C

TJ = 2 5°C

1
0.4 0.8 1.2 1.6 2.0 2.4

Fo rwa rd V oltage D rop - V FM (V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4BC30UD
160 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

120

I F = 24 A
I F = 2 4A

I IR R M - (A )
t rr - (ns)

I F = 1 2A
I F = 1 2A
80 10
I F = 6 .0 A
I F = 6 .0A

40

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
d i(re c )M /d t - (A /µ s)

400 1000
IF = 6.0 A
Q R R - (n C )

I F = 2 4A
I F = 12 A
I F = 1 2A
200 100

I F = 2 4A
I F = 6.0 A

0 10
100 1000 100 1000
d i f /d t - (A /µ s) d i f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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IRG4BC30UD

90% Vge
+Vge

Same ty pe
device as Vce
D .U.T.

9 0 % Ic
10% Vce
Ic Ic
430µF 5 % Ic
80%
of Vce D .U .T.
td (o ff) tf

t1 + 5 µ S
Eoff =
∫ V c e ic d t
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O L T A G E D .U .T .
Ic
trr
Q rr =
∫ tx
id d t

1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
E o n = V ce ie d t t4
t1

D IO D E R E V E R S E
E re c =
∫ V d id d t
t3
t1 t2
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4BC30UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4BC30UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-220AB

1 0 .5 4 (.41 5 ) 3.78 (.149) -B - N O TE S :

2 .8 7 (.1 1 3 ) 1 0 .2 9 (.40 5 ) 4.69 (.185) 1 D IM E N S IO N S & T O L E R A N C IN G
3.54 (.139)
2 .6 2 (.1 0 3 ) 4.20 (.165) P E R A N S I Y 14 .5 M , 1 9 8 2 .
-A- 1.32 (.052)
1.22 (.048) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
6.47 (.255 )
M ILL IM E T E R S (IN C H E S ).
4 6.10 (.240 )
4 C O N F O R M S T O JE D E C O U T L IN E
1 5 .2 4 (.6 0 0 ) T O -2 2 0 A B .
1 4 .8 4 (.5 8 4 )
1.15 (.045)
M IN LEAD A S S IG N M E N T S
1 2 3 1- GA TE
3.96 (.160) 2- C O L LE C T O R
3X 3- E M IT T E R
3.55 (.140)
4- C O L LE C T O R
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4.06 (.160 )
3.55 (.140 )

0.93 (.037) 0.55 (.022)

3X 3X
1 .4 0 (.0 5 5 ) 0.69 (.027) 0.46 (.018)
3 X 1 .1 5 (.0 4 5 )
0 .3 6 (.01 4 ) M B A M
2.92 (.115)
2 .5 4 (.1 0 0) 2.64 (.104)
2X

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e ns io ns in M illim e ters a nd (In c he s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00

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