Ap9918h Ap9918j
Ap9918h Ap9918j
Ap9918h Ap9918j
G
D
S TO-251(J)
Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 45 A
1
ISM Pulsed Source Current ( Body Diode ) - - 140 A
2
VSD Forward On Voltage Tj=25℃, IS=45A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
120 80
o V G =4.5V
T C =25 C T C =150 o C V G =4.5V
V G =4.0V
V G =4.0V 60 V G =3.5V
80
V G =3.5V
V G =3.0V
40
V G =3.0V
40 V G =2.5V
V G =2.5V 20
0 0
0 1 2 3 4 0 1 2 3 4
1.8
26
I D = 18 A I D =18A
24
o 1.6
T C =25 C V G =4.5V
22
1.4
Normalized R DS(ON)
20
RDS(ON) (mΩ )
18 1.2
16
1.0
14
0.8
12
10 0.6
1 2 3 4 5 6 -50 0 50 100 150
50 60
50
40
ID , Drain Current (A)
40
30
PD (W)
30
20
20
10
10
0 0
25 50 75 100 125 150 0 50 100 150
1
1000
DUTY=0.5
Normalized Thermal Response (R thjc)
0.2
100
10us 0.1
ID (A)
0.1 0.05
100us 0.02
PDM
SINGLE PULSE
10 0.01 t
1ms T
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
12 10000 f=1.0MHz
I D =18A
10
V DS =10V
VGS , Gate to Source Voltage (V)
V DS =15V
8 V DS =20V 1000
Ciss
C (pF)
6
Coss
4 100
Crss
0 10
0 5 10 15 20 25 30 35 1 5 9 13 17 21 25 29
V DS (V)
Q G , Total Gate Charge (nC)
1.6
100
1.4
10
1.2
T j =150 o C
T j =25 o C 1
VGS(th) (V)
IF (A)
0.8
0.6
0.1
0.4
0.01 0.2
0 0.4 0.8 1.2 1.6 -50 0 50 100 150
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
VDS
RD 90%
VDS TO THE
D OSCILLOSCOPE
10%
+ S
5v
VGS
VGS
-
td(on) tr td(off) tf
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
VG
VDS
TO THE
QG
D OSCILLOSCOPE
5V
RATED VDS
G QGS QGD
S VGS
+
-
I I
G D
Charge Q
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform