Mosfet FS10KM-5
Mosfet FS10KM-5
Mosfet FS10KM-5
Som
HIGH-SPEED SWITCHING USE
6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
➀ ➁ ➂
2.6 ± 0.2
➁
➀ GATE
➀ ➁ DRAIN
● 10V DRIVE ➂ SOURCE
● VDSS ............................................................................... 250V
● rDS (ON) (MAX) ............................................................. 0.52Ω ➂
● ID ......................................................................................... 10A TO-220FN
APPLICATION
CS Switch for CRT Display monitor
Sep.1998
MITSUBISHI Nch POWER MOSFET
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 250 — — V
IGSS Gate-source leakage current VGS = ±20V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 250V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2.0 3.0 4.0 V
rDS (ON) Drain-source on-state resistance ID = 5A, VGS = 10V — 0.40 0.52 Ω
VDS (ON) Drain-source on-state voltage ID = 5A, VGS = 10V — 2.00 2.60 V
yfs Forward transfer admittance ID = 5A, VDS = 10V — 9.0 — S
Ciss Input capacitance — 950 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 90 — pF
Crss Reverse transfer capacitance — 25 — pF
td (on) Turn-on delay time — 20 — ns
tr Rise time — 25 — ns
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 150 — ns
tf Fall time — 40 — ns
VSD Source-drain voltage IS = 5A, VGS = 0V — 0.95 — V
Rth (ch-c) Thermal resistance Channel to case — — 3.91 °C/W
Sep.1998