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    4N65F

    Uploaded by

    Arun Kumar
    This document provides specifications for the 4N65(F,B,H,G,D) 4A MOSFET. It lists key features such as supporting 4A of continuous drain current at 650V. It provides maximum ratings for parameters like drain-source voltage, gate-source voltage, and pulsed drain current. Electrical characteristics are given like gate threshold voltage, on-state resistance, input/output capacitances, and switching times. Thermal characteristics like junction-to-case thermal resistance and maximum power dissipation are also specified.

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    4N65F

    Uploaded by

    Arun Kumar
    155 views2 pages
    This document provides specifications for the 4N65(F,B,H,G,D) 4A MOSFET. It lists key features such as supporting 4A of continuous drain current at 650V. It provides maximum ratings for parameters like drain-source voltage, gate-source voltage, and pulsed drain current. Electrical characteristics are given like gate threshold voltage, on-state resistance, input/output capacitances, and switching times. Thermal characteristics like junction-to-case thermal resistance and maximum power dissipation are also specified.

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    This document provides specifications for the 4N65(F,B,H,G,D) 4A MOSFET. It lists key features such as supporting 4A of continuous drain current at 650V. It provides maximum ratings for parameters like drain-source voltage, gate-source voltage, and pulsed drain current. Electrical characteristics are given like gate threshold voltage, on-state resistance, input/output capacitances, and switching times. Thermal characteristics like junction-to-case thermal resistance and maximum power dissipation are also specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    155 views2 pages

    4N65F

    Uploaded by

    Arun Kumar
    This document provides specifications for the 4N65(F,B,H,G,D) 4A MOSFET. It lists key features such as supporting 4A of continuous drain current at 650V. It provides maximum ratings for parameters like drain-source voltage, gate-source voltage, and pulsed drain current. Electrical characteristics are given like gate threshold voltage, on-state resistance, input/output capacitances, and switching times. Thermal characteristics like junction-to-case thermal resistance and maximum power dissipation are also specified.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    4N65(F,B,H,G,D)

    4A mps,650 Volts N-CHANNEL MOSFET


    FEATURE
     4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A
     Low gate charge
     Low Ciss
     Fast switching
     100% avalanche tested TO-220AB ITO-220AB TO-262
     Improved dv/dt capability 4N65 4N65F 4N65H

    TO-263 TO-252 TO-251


    4N65B 4N65G 4N65D

    Absolute Maximum Ratings(TC=25℃,unless otherwise noted)


    Parameter Symbol 4N65 UNIT

    Drain-Source Voltage VDSS 600


    V
    Gate-Source Voltage VGSS ±30
    Continuous Drain Current ID 4
    A
    Pulsed Drain Current(Note1) IDM 16
    Single Pulse Avalanche Energy (Note 2) EAS 300 mJ
    Avalanche Current(Note1) IAR 4 A
    Repetitive Avalanche Energy (Note1) EAR 30 mJ
    Reverse Diode dV/dt (Note 3) dv/dt 4.5 V/ns
    Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃
    Maximum lead temperature for soldering purposes,
    TL 260 ℃
    1/8"from case for 5 seconds
    10 lbf·in
    Mounting Torque 6-32 or M3 screw
    1.1 N·m

    Thermal Characteristics
    TO-262 TO-251 Units
    Parameter Symbol ITO-220 TO-220
    TO-263 TO-252
    Maximum Junction-to-Case RthJC 2.2 1.8 1.8 5.7 ℃/W
    Maximum Power Dissipation TC=25℃ PD 57 70 70 22 W

    - 页码 - Rev. 14-1
    http:// www.perfectway.cn
    Electrical Characteristics (Tc=25℃,unless otherwise noted)
    Parameter Symbol Test Conditions Mix Typ Max Units
    Off Characteristics
    Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 650 － － V
    Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃，
    － 0.6 － V/℃
    /ΔTJ ID=250uA
    Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V － － 1 uA
    Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － － 10 uA
    Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － － -10 uA
    On Characteristics
    Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 － 4 V
    Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2A － 2.2 2.5 Ω
    Dynamic Characteristics
    Input Capacitance Ciss VDS=25V,VGS=0V, － 520 670 pF
    Output Capacitance Coss f=1.0MHZ － 70 90 pF
    Reverse Transfer Capacitance Crss － 8 11 pF

    Switching Characteristics

    Turn-On Delay Time td(on) VDD=300V,ID=4A, － 13 35 ns


    Turn-On Rise Time tr RG=25Ω － 45 100 ns
    Turn-Off Delay Time td(off) (Note4,5) － 25 60 ns
    Turn-Off Fall Time tf － 35 80 ns
    Total Gate Charge Qg VDS=520V,ID=4A, － 15 20 nC
    Gate-Source Charge Qgs VGS=10V, (Note4,5) － 3.4 － nC
    Gate-Drain Charge Qgd － 7.1 － nC
    Drain-Source Body Diode Charcteristics and Maximum Ratings
    Continuous Diode Forward Current IS － － 4 A
    Pulsed Diode Forward Current ISM － － 16 A
    Diode Forward Voltage VSD IS=4A,VGS=0V － － 1.5 V
    Reverse Recovery Time trr VGS=0V,IS=4A, － 250 － ns
    Reverse Recovery Charge Qrr dIF/dt=100A/us, (Note4) － 1.5 － uC
    Notes
    1. Repetitive Rating:pulse width limited by maximum junction temperature.
    2. VDD=50V,starling,L=36mH,Rg=25Ω,IAS=4A , TJ=25℃.
    3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
    4. Pulse width≤300us;duty cycle≤2%.
    5. Repetitive rating; pulse width limited by maximum junction temperature.

    - 页码 - Rev. 14-1
    http:// www.perfectway.cn

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