Unisonic Technologies Co., LTD: 10 Amps, 600/650 Volts N-Channel Power Mosfet
Unisonic Technologies Co., LTD: 10 Amps, 600/650 Volts N-Channel Power Mosfet
Unisonic Technologies Co., LTD: 10 Amps, 600/650 Volts N-Channel Power Mosfet
, LTD
10N60 Power MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* 10A, 600V, RDS(ON) =0.73Ω@VGS =10V
* Low gate charge ( typical 44 nC) *Pb-free plating product number: 10N60L
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
10N60-x-TA3-T 10N60L-x-TA3-T TO-220 G D S Tube
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Copyright © 2007 Unisonic Technologies Co., Ltd QW-R502-119.A
10N60 Power MOSFET
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction-to-Ambient θJA 62.5 °C/W
Junction-to-Case θJC 0.8 °C/W
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V
Maximum Continuous Drain-Source Diode
IS 10 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 38 A
Forward Current
Reverse Recovery Time tRR VGS = 0 V, IS = 10A, 420 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/µs (Note 4) 4.2 µC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤200A/µs, VDD ≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
D.U.T. +
VDS
- L
RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IRM
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V D.U.T.
tp
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
QW-R502-119.A
6 of 9
Power MOSFET
10N60 Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage,
(Normalized)
Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature
102 10
Operation in this Area is United by RDM
10μs
8
100μs
Drain Current, ID (A)
Drain Current, ID (A)
101 1ms
10ms 6
100ms
DC
4
100
Notes:
1.TC=25℃ 2
2.TJ=150℃
3.Single Pulse
10-1 0 0
10 101 102 103 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (℃)
D=0.5
0.2 NOTES:
-1 1.ZθJC(t)=2.5D/W Max
10 0.1 2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
0.05
0.02
PDW
0.01
Single pulse
t1
10-2 t2
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.