80N06 Utc

UNISONIC TECHNOLOGIES CO.
, LTD
80N06 Preliminary Power MOSFET
80A, 60V N-CHANNEL

POWER MOSFET
 DESCRIPTION
The UTC 80N06 is an N-channel MOSFET using UTC
advanced technology.
The UTC 80N06 is suitable for power supply (secondary
synchronous rectification), industrial and primary switch etc.
 FEATURES
* RDS(ON) < 8.5mΩ @ VGS = 10 V, ID = 40 A
 SYMBOL
2.Drain
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
80N06L-TA3-T 80N06G-TA3-T TO-220 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
 MARKING
www.unisonic.com.tw 1 of 5
Copyright © 2016 Unisonic Technologies Co., Ltd QW-R209-168.b
 ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current Continuous ID 80 A
Pulsed Drain Current Pulsed (Note 2) IDM 320 A
Avalanche Current (Note 3) IAR 58 A
Avalanche energy Single Pulsed (Note 3) EAS 168 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/nS
Power Dissipation PD 200 W
Junction Temperature TJ +150 °C
Storage Temperature Range TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=58A, VDD=50V, RG=25Ω, Starting TJ = 25°C.
4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 0.625 °C/W
 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 60 V
Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1 µA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A 8.5 mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 3500 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 370 pF
Reverse Transfer Capacitance CRSS 295 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG 308 nC
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge QGS 12 nC
ID=100µA (Note 1, 2)
Gate to Drain Charge QGD 45 nC
Turn-on Delay Time (Note 1) tD(ON) 45 ns
Rise Time tR VDS=30V, VGS=10V, ID=0.5A, 76 ns
Turn-off Delay Time tD(OFF) RG=25Ω (Note 1, 2) 155 ns
Fall-Time tF 473 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 80 A
Maximum Body-Diode Pulsed Current ISM 320 A
Drain-Source Diode Forward Voltage (Note 1) VSD IS=80A, VGS=0V 1.2 V
Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, 90 ns
Reverse Recovery Charge Qrr dIF/dt=100A/μs 110 nC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 2 of 5

www.unisonic.com.tw QW-R209-168.b
 TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms

 TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON) tD(OFF)
tR tF
Switching Test Circuit Switching Waveforms
VGS
QG
10V
QGS QGD
Charge
Gate Charge Test Circuit Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp Time
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.


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UNISONIC TECHNOLOGIES CO.

80A, 60V N-CHANNEL

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

UNISONIC TECHNOLOGIES CO., LTD 2 of 5

 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 3 of 5

 TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 4 of 5

UNISONIC TECHNOLOGIES CO., LTD 5 of 5

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