2 SK 3476

2SK3476
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: D = 60% (min)
Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 5 3 20 150 45~150 Unit V V A W C C
Note 1: Tc = 25C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC 2-5N1A
Marking
2 Type name
JEITA TOSHIBA
UC
F **
Dot
Lo No. 1. Gate 2. Source (heat sink) 3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
2002-01-09
2SK3476
Electrical Characteristics (Ta = 25C)
Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 1 A VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, VDS = 6.0 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, VDS = 10 V, PO = 7 W, VGS = adjust, Pi = adjust, f = 520 MHz, VSWR LOAD 20:1 all phase Min 0.55 7 60 11.4 5 Typ. 1.05 18 1 53 49 Max 5 5 1.55 Unit mA mA V mV S pF pF W % dB W
Load mismatch
No degradation
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, VDS = 7.2 V, Iidle = 500 mA, Pi = 500 mW)
C11 C9 Pi ZG = 50 W C1 C2 C3 C12 L1 C13 C14 L2 C6 C15 C7 C8 C4 R1 C5 C10 PO ZL = 50 W
R2 VGS
VDS L1: f0.6 mm enamel wire, 5.8ID, 4T L2: f0.6 mm enamel wire, 5.8ID, 8T R1: 2.2 W R2: 1.5 kW
C1: 15 pF C2: 11 pF C3: 9 pF C4: 30 pF C5: 30 pF C6: 11 pF C7: 8 pF C8: 9 pF C9: 2200 pF C10: 2200 pF C11: 2200 pF C12: 10000 pF C13: 10 mF C14: 10000 pF C15: 10 mF
2002-01-09
2SK3476
PO Pi
12 f = 520 MHz 10 VDS = 7.2 V Tc = 25C 700 mA 20 f = 520 MHz Iidle = 500 mA Tc = 25C
PO Pi
9.6 V
(W)
8 Iidle = 300 mA 6
PO
Output power
Output power
PO
10 7.2 V VDS = 6.0 V 5 800 1000 0 0
500 mA
0 0
200
400
600
(W)
15
200
400
600
800
1000
Input power Pi
(mW)
Input power Pi
(mW)
hD Pi
100 f = 520 MHz VDS = 7.2 V Tc = 25C 700 mA 60 500 mA Iidle = 300 mA 40 100 f = 520 MHz Iidle = 500 mA Tc = 25C VDS = 6.0 V 60 7.2 V 40 9.6 V
hD Pi
(%)
Drain efficiency DD
20
Drain efficiency DD
600 800 1000
(%)
80
80
20
0 0
200
400
0 0
200
400
600
800
1000
Input power Pi
(mW)
Input power Pi
(mW)
PO Pi
12 f = 520 MHz 10 VDS = 7.2 V Iidle = 500 mA 80 100 f = 520 MHz VDS = 7.2 V Iidle = 500 mA
hD Pi
(W)
Drain efficiency DD
(%)
-20C
PO
60C 6 Tc = 100C 25C
60
-20C 60C
Output power
40
Tc = 100C
25C
20
0 0
200
400
600
800
1000
0 0
200
400
600
800
1000
Input power Pi
(mW)
Input power Pi
(mW)
Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.
2002-01-09
2SK3476
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.
2002-01-09
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

2 SK 3476

Uploaded by

Copyright:

Available Formats

2 SK 3476

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

2 SK 3476

Uploaded by

Copyright:

Available Formats

2SK3476

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Maximum Ratings (Ta = 25C)

Lo No. 1. Gate 2. Source (heat sink) 3. Drain

Output Power Test Fixture

60C 6 Tc = 100C 25C

RESTRICTIONS ON PRODUCT USE

You might also like