2 SC2236, NPN

2SC2236
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
Unit: mm Complementary to 2SA966 and 3-watt output applications.
Absolute Maximum Ratings (Ta = 25C)

Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 5 1.5 0.15 900 150 55 to 150 Unit V V V A A mW C C
Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-92MOD temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5J1A operating temperature/current/voltage, etc.) are within the Weight: 0.36 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2006-11-09
2SC2236
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 2 V, IC = 500 mA IC = 1.5 A, IB = 0.03 A VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 500 mA VCB = 10 V, IE = 0, f = 1 MHz Min 30 5 100 Typ. 120 Max 100 100 320 2.0 1.0 30 V V MHz pF Unit nA nA V V
Note: hFE classification O: 100 to 200, Y: 160 to 320
Marking
C2236
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2006-11-09
2SC2236
IC VCE
1600 1400
hFE IC
1000
DC current gain hFE
10 8
Common emitter Ta = 25C
500 300 100 50 30 10 1
Ta = 100C 25 25 Common emitter VCE = 2 V 3 10 30 100 300 1000 3000
(mA)
1200 6 1000 800 600 400 200 0 0 IB = 1 mA 0 2 4 6 8 10 12 14 16 18 4 3 2
Collector current IC
(mA)
Collector-emitter voltage
VCE (V)
VCE (sat) IC
5 1600 Common emitter IC/IB = 50 1400
IC VBE
Common emitter VCE = 2 V
Collector-emitter saturation voltage VCE (sat) (V)
3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 Ta = 25C 25
(mA) Collector current IC
1200 1000 Ta = 100C 800 600 400 200 0 0 25 25
10
30
100
300
1000
3000
(mA)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Base-emitter voltage
VBE (V)
Safe Operating Area

5
PC Ta
1000
IC max (pulsed)* IC max (continuous) 100 ms*
10 ms* 1 ms*
(mW)
(A)
1 1 s* 0.5 0.3 DC operation Ta = 25C
800
Collector power dissipation
600
400
PC
0.1 *: Single nonrepetitive pulse 0.05 Ta = 25C Curves must be derated linearly VCEO max 10 30
200
0 0
20
40
60
80
100
120
140
160
with increase in temperature. 0.02 0.3 1 3
Ambient temperature Ta (C)
Collector-emitter voltage
VCE (V)
2006-11-09
2SC2236
RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
2006-11-09

2 SC2236, NPN

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2SC2236

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Absolute Maximum Ratings (Ta = 25C)

Note: hFE classification O: 100 to 200, Y: 160 to 320

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

DC current gain hFE

Common emitter Ta = 25C

500 300 100 50 30 10 1

Ta = 100C 25 25 Common emitter VCE = 2 V 3 10 30 100 300 1000 3000

1200 6 1000 800 600 400 200 0 0 IB = 1 mA 0 2 4 6 8 10 12 14 16 18 4 3 2

Collector-emitter saturation voltage VCE (sat) (V)

3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 Ta = 25C 25

(mA) Collector current IC

1200 1000 Ta = 100C 800 600 400 200 0 0 25 25

Safe Operating Area

IC max (pulsed)* IC max (continuous) 100 ms*

1 1 s* 0.5 0.3 DC operation Ta = 25C

Collector power dissipation

with increase in temperature. 0.02 0.3 1 3

Ambient temperature Ta (C)

RESTRICTIONS ON PRODUCT USE

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