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    Chenmko Enterprise Co.,Ltd: P-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    negrea_c8079
    This document provides specifications for a P-channel enhancement mode field effect transistor (FET) from Chenmko Enterprise Co., Ltd. Key specifications include: - Voltage rating of 30V - Continuous drain current rating of 5.3A - Small flat SO-8 package suitable for high density applications - Features include low on-resistance, high saturation current capability, and reliability - Intended applications include servo motor control, power MOSFET gate drivers, and other switching applications

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Chenmko Enterprise Co.,Ltd: P-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    negrea_c8079
    294 views3 pages
    This document provides specifications for a P-channel enhancement mode field effect transistor (FET) from Chenmko Enterprise Co., Ltd. Key specifications include: - Voltage rating of 30V - Continuous drain current rating of 5.3A - Small flat SO-8 package suitable for high density applications - Features include low on-resistance, high saturation current capability, and reliability - Intended applications include servo motor control, power MOSFET gate drivers, and other switching applications

    Original Description:

    power mosfet

    Original Title

    9435 Smd Power MOSFET

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    © Attribution Non-Commercial (BY-NC)

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    This document provides specifications for a P-channel enhancement mode field effect transistor (FET) from Chenmko Enterprise Co., Ltd. Key specifications include: - Voltage rating of 30V - Continuous drain current rating of 5.3A - Small flat SO-8 package suitable for high density applications - Features include low on-resistance, high saturation current capability, and reliability - Intended applications include servo motor control, power MOSFET gate drivers, and other switching applications

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    294 views3 pages

    Chenmko Enterprise Co.,Ltd: P-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    negrea_c8079
    This document provides specifications for a P-channel enhancement mode field effect transistor (FET) from Chenmko Enterprise Co., Ltd. Key specifications include: - Voltage rating of 30V - Continuous drain current rating of 5.3A - Small flat SO-8 package suitable for high density applications - Features include low on-resistance, high saturation current capability, and reliability - Intended applications include servo motor control, power MOSFET gate drivers, and other switching applications

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    CHENMKO ENTERPRISE CO.

    ,LTD
    SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor
    VOLTAGE 30 Volts
    APPLICATION
    * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

    CHM9435AJPT

    CURRENT 5.3 Ampere

    FEATURE
    * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability.
    1

    SO-8
    4.06 (0.160) 3.70 (0.146)
    8

    CONSTRUCTION
    * P-Channel Enhancement

    5.00 (0.197) 4.69 (0.185)


    4 5

    .51 (0.020) .10 (0.012) 1.27 (0.05)BSC

    MARKING
    * 9435A

    1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)

    .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)

    CIRCUIT

    D D

    S S

    Dimensions in millimeters

    SO-8

    Absolute Maximum Ratings


    Symbol Parameter

    TA = 25C unless otherwise noted

    CHM9435AJPT

    Units

    VDSS VGSS

    Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous

    -30

    V V

    20
    -5.3

    ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
    (Note 3)

    A -20 2500 -55 to 150 -55 to 150 mW C C

    Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting

    Thermal characteristics
    RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W
    2005-02

    RATING CHARACTERISTIC CURVES ( CHM9435AJPT )


    Electrical Characteristics T
    Symbol Parameter
    A

    = 25C unless otherwise noted

    Conditions

    Min

    Typ

    Max

    Units

    OFF CHARACTERISTICS

    BVDSS IDSS I GSSF I GSSR

    Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage

    VGS = 0 V, ID = -250 A VDS = -24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V

    -30 -1 +100 -100

    V A nA nA

    ON CHARACTERISTICS

    (Note 2)

    VGS(th) RDS(ON) g FS

    Gate Threshold Voltage Static Drain-Source On-Resistance

    VDS = VGS, ID = -250 A VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A

    -1 44 74 4 7.0

    -3 50 90

    V m S

    Forward Transconductance

    VDS = -15V, ID = -5.3A

    SWITCHING CHARACTERISTICS (Note 4)

    Qg Q gs Q tr t off tf
    gd

    Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time

    VDS=-15V, ID=-5.3A VGS=-10V V DD= -15V I D = -1.0A , VGS = -10 V RGEN= 6

    22.5 2.0 6.0 19 9 74 36

    29 nC

    t on

    26 13 105 50 nS

    DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

    IS V SD

    Drain-Source Diode Forward Current

    (Note 1)

    -1.9 -1.3

    A V

    Drain-Source Diode Forward Voltage I S = -5.3A , VGS = 0 V (Note 2)

    RATING CHARACTERISTIC CURVES ( CHM9435AJPT )


    Typical Electrical Characteristics

    Figure 1. Output Characteristics


    25

    Figure 2. Transfer Characteristics


    20

    V G S =- 1 0 V
    I D , DRAIN CURRENT (A)
    -9.0V -8.0V -7.0V

    I D , DRAIN CURRENT (A)

    20

    VG S =- 6 . 0 V

    16

    15

    TJ=-55C
    12

    10

    VG S =- 5 . 0 V VG S =- 4 . 0 V VG S =- 3 . 0 V
    0 0.5 2.0 2.5 1.0 1.5 V DS , DRAIN- TO- SOURCE VOLTAGE (V) 3.0

    TJ=125C
    0 0 0.5 VGS

    TJ=25C
    2.5 3.0

    2.0 1.0 1.5 , GATE-TO-SOURCE VOLTAGE (V)

    Figure 3. Gate Charge


    10 2.2 VDS=-15V ID=-5.3A 8

    Figure 4. On-Resistance Variation with Temperature


    VGS=-10V ID=-5.3A

    VGS , GATE TO SOURCE VOLTAGE (V)

    DRAIN-SOURCE ON-RESISTANCE

    1. 9

    R DS(on) , NO RMALIZED

    1. 6

    1. 3

    1. 0

    0. 7

    0 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24

    0. 4 -100

    -50

    0 50 100 TJ , JUNCTION T EMPERATURE (C)

    150

    200

    Figure 5. Gate Threshold Variation with Temperature


    1. 3 1. 2 VDS=VGS ID=250uA

    Vth , NORMALIZED GATE-SOURCE

    THRESHOLD VOLTAGE

    1. 1 1.0 0.9 0. 8

    0. 7 0. 6 -50

    -25

    0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)

    125

    150

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