NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor

May 1996
NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.

Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
______________________________________________________________________________
Absolute Maximum Ratings
T C = 25C unless otherwise noted
Symbol
Parameter
NDP6051
VDSS
Drain-Source Voltage
50
VDGR
Drain-Gate Voltage (RGS < 1 M)
50
VGSS
Gate-Source Voltage - Continuous
20
- Nonrepetitive (tP < 50 s)

ID
Drain Current
NDB6051
40
- Continuous
48
- Pulsed
144
PD
Total Power Dissipation @ TC = 25C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds
Derate above 25C
1997 Fairchild Semiconductor Corporation
Units
100
0.67
W/C
-65 to 175
275
NDP6051 Rev. C1
Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol
Parameter
Conditions
Min
Typ
Max
Units
300
mJ
48
250
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W DSS
Single Pulse Drain-Source Avalanche

Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 48 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
TJ = 125C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A

TJ = 125C
RDS(ON)
Static Drain-Source On-Resistance
2.8
1.4
2.2
3.6
0.018
0.022
0.03
0.04
VGS = 10 V, ID = 24 A
TJ = 125C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V, ID = 24 A
60
14
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1220
pF
520
pF
190
pF
SWITCHING CHARACTERISTICS (Note 1)

tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
VDD = 30 V, ID = 48 A,
VGS = 10 V, RGEN = 7.5
10
20
nS
132
250
nS
Turn - Off Delay Time
28
55
nS
tf
Turn - Off Fall Time
80
150
nS
Qg
Total Gate Charge
37
53
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 24 V,
ID = 48 A, VGS = 10V
8
22
NDP6051 Rev. C1
Electrical Characteristics (TC = 25C unless otherwise noted)

Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS

IS
Maximum Continuos Drain-Source Diode Forward Current
48
ISM
Maximum Pulsed Drain-Source Diode Forward Current
144
VSD
Drain-Source Diode Forward Voltage
0.9
1.3
0.8
1.2
VGS = 0 V, IS = 24 A (Note 1)
TJ = 125C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/s
35
140
ns
THERMAL CHARACTERISTICS
RJC
Thermal Resistance, Junction-to-Case
1.5
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP6051 Rev. C1
Typical Electrical Characteristics
VGS = 12V
2.5
10
9.0
80
60
R DS(on) , NORMALIZED
8.0
7.0
40
6.0
20
5.0
1
V
DS
2
3
4
, DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE CURRENT (A)
100
7.0
1.5
8.0
10
40
60
, DRAIN CURRENT (A)
80
100
2.5
I D = 24A
R DS(on) , NORMALIZED
V GS = 10V
1.5
1.25
1
0.75
-25
25
50
75
100
125
T , JUNCTION TEMPERATURE (C)
150
R DS(ON) , NORMALIZED
20
TJ = 125C
1.75
1.5
1.25
25C
-55C
0.75
0.5
175
VGS = 10V
2.25
20
40
60
ID , DRAIN CURRENT (A)
80
100
Figure 4. On-Resistance Variation with Drain

Current and Temperature.
Figure 3. On-Resistance Variation

with Temperature.
1.2
T = -55C
J
V DS = 10V
50
25C
V GS(th), NORMALIZED
125C
40
30
20
10
0
2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
GATE-SOURCE THRESHOLD VOLTAGE
60
I D , DRAIN CURRENT (A)
12
Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.
0.5
-50
Figure 1. On-Region Characteristics.
1.75
9.0
0.5
VGS = 6.0V
V DS = V GS
I D = 250A
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
25
50
75
100
125
T , JUNCTION TEMPERATURE (C)
150
175
Figure 6. Gate Threshold Variation With

Temperature.
NDP6051 Rev. C1
Typical Electrical Characteristics (continued)

50
20
I D = 250A
I , REVERSE DRAIN CURRENT (A)
1.1
1.05
0.95
V GS = 0V
5
2
1
TJ = 125C
25C
0.1
-55C
0.01
0.001
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
0.9
-50
-25
0
T
25
50
75
100
125
, JUNCTION TEMPERATURE (C)
150
175
0.0001
0.2
0.4
0.6
0.8
1
1.2
V , BODY DIODE FORWARD VOLTAGE (V)
1.4
SD
Figure 7. Breakdown Voltage Variation with

Temperature.
Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.
20
CAPACITANCE (pF)
2000
V GS, GATE-SOURCE VOLTAGE (V)
3000
Ciss
VDS = 12V
24V
48V
I D = 48A
15
1000
Coss
10
500
Crss
300
f = 1 MHz
V GS = 0V
200
100
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
20
40
Q g , GATE CHARGE (nC)
60
80
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
VDD
t on
RL
V IN
t d(on)
VGS
R GEN
DUT
tr
V OUT
t off
t d(off)
tf
90%
90%
VOUT
10%
10%
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP6051 Rev. C1
Typical Electrical Characteristics (continued)

300
gFS, TRANSCONDUCTANCE (SIEMENS)
30
TJ = -55C
V DS=10V
100
I D , DRAIN CURRENT (A)
24
25C
18
125C
12
(O
DS
N)
Lim
it
100
50
1ms
20
10m
10
100
VGS = 10V
SINGLE PULSE
o
RJC = 1.5 C/W
T C = 25C
5
2
DC
s
ms
1
0
0.5
0
10
20
I D, DRAIN CURRENT (A)
30
40
Figure 13. Transconductance Variation with Drain

Current and Temperature.
3
5
10
20
30
VDS , DRAIN-SOURCE VOLTAGE (V))
50
70
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
0.3
R JC (t) = r(t) * RJC

R
JC = 1.5 C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
0.01
0.01
0.02
0.05
t2
TJ - T C = P * R
JC (t)
Duty Cycle, D = t 1 /t2
Single Pulse
0.1
0.2
0.5
2
5
t1 ,TIME (m s)
10
20
50
100
200
500
1000
Figure 15. Transient Thermal Response Curve.
NDP6051 Rev. C1

NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor

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NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor

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May 1996

These N-Channel enhancement mode power field effect

48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.

Absolute Maximum Ratings

T C = 25C unless otherwise noted

Drain-Gate Voltage (RGS < 1 M)

Gate-Source Voltage - Continuous

- Nonrepetitive (tP < 50 s)

Total Power Dissipation @ TC = 25C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

Derate above 25C

1997 Fairchild Semiconductor Corporation

Electrical Characteristics (TC = 25C unless otherwise noted)

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

Single Pulse Drain-Source Avalanche

Maximum Drain-Source Avalanche Current

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Static Drain-Source On-Resistance

On-State Drain Current

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 1)

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

Electrical Characteristics (TC = 25C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Maximum Continuos Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Current

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Typical Electrical Characteristics

, DRAIN-SOURCE CURRENT (A)

Figure 4. On-Resistance Variation with Drain

Figure 3. On-Resistance Variation

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

GATE-SOURCE THRESHOLD VOLTAGE

I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with Gate

Figure 1. On-Region Characteristics.

Figure 6. Gate Threshold Variation With

Typical Electrical Characteristics (continued)

I , REVERSE DRAIN CURRENT (A)

Figure 7. Breakdown Voltage Variation with

Figure 8. Body Diode Forward Voltage

V GS, GATE-SOURCE VOLTAGE (V)