2SA1767 BED Discon

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1767
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1473A Features
Unit: mm
5.00.2 4.00.2
High collector-emitter voltage (Base open) VCEO
Absolute Maximum Ratings Ta = 25C

Parameter Symbol VCBO VCEO IC VEBO ICP PC Tj Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
Peak collector current
Collector power dissipation Junction temperature Storage temperature
Electrical Characteristics Ta = 25C 3C

Parameter Symbol VCEO VEBO hFE fT Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio
*
Collector-emitter saturation voltage
/D
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q
M ai nt en an
Collector output capacitance (Common base, input open circuited)
Pl ea
Publication date: January 2003
ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n.
0.70.1
0.70.2
M Di ain sc te on na tin nc ue e/ d
Rating 300 300 5 70 750 150 Unit V V
0.45+0.15 0.1 2.5+0.6 0.2
12.90.5
5.10.2
0.45+0.15 0.1
2.5+0.6 0.2
100
mA C
mW C
Tstg
55 to +150
Conditions
Min 5 30
2.30.2
mA
2 3
1: Emitter 2: Collector 3: Base TO-92-B1 Package
Typ
Max
Unit V
IC = 100 A, IB = 0 IE = 1 A, IC = 0
300
nt in
VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 1 mA
150
co
is
VCE(sat) Cob
0.6
VCB = 10 V, IE = 10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
50 7
MHz pF
ce
60 to 150
SJC00030BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1767
PC Ta
1 000
100
IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 60 0.7 mA 0.6 mA 40 0.5 mA 0.4 mA 20 0.3 mA 0.2 mA 0.1 mA 120
IC VBE
VCE = 10 V 25C Ta = 75C 25C
Collector power dissipation PC (mW)
800
Collector current IC (mA)
80
100
80
600
60
400
40
200
20
20
40
60
80 100 120 140 160
10
12
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 300
hFE IC
VCE = 10 V 120
fT I E
VCB = 10 V Ta = 25C
Forward current transfer ratio hFE
10
200 Ta = 75C 150 25C 100 25C
Transition frequency fT (MHz)

10 100
250
100
80
1 25C Ta = 75C 25C
60
40
0.1
50
20
0.01 0.1
10
100
0 0.1
0 0.1
10
100
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
20 10 000 IE = 0 f = 1 MHz Ta = 25C 1 000
ICEO Ta
VCE = 120 V
16
12
ICEO (Ta) ICEO (Ta = 25C)

10 100
100
10 4
0 1
40
80
120
160
200
240
Collector-base voltage VCB (V)
Ambient temperature Ta (C)
SJC00030BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

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This product complies with the RoHS Directive (EU 2002/95/EC).

High collector-emitter voltage (Base open) VCEO

Absolute Maximum Ratings Ta = 25C

Peak collector current

Collector power dissipation Junction temperature Storage temperature

Electrical Characteristics Ta = 25C 3C

Collector-emitter saturation voltage

Collector output capacitance (Common base, input open circuited)

Publication date: January 2003

1: Emitter 2: Collector 3: Base TO-92-B1 Package

VCB = 10 V, IE = 10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz

This product complies with the RoHS Directive (EU 2002/95/EC).

Collector power dissipation PC (mW)

Collector current IC (mA)

Collector current IC (mA)

80 100 120 140 160

Ambient temperature Ta (C)

Collector-emitter voltage VCE (V)

Base-emitter voltage VBE (V)

Forward current transfer ratio hFE

200 Ta = 75C 150 25C 100 25C

Transition frequency fT (MHz)

1 25C Ta = 75C 25C

Collector current IC (mA)

Collector current IC (mA)

Emitter current IE (mA)

ICEO (Ta) ICEO (Ta = 25C)

Collector-base voltage VCB (V)

Ambient temperature Ta (C)

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