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    GT60M303

    Uploaded by

    roozbehxox
    The document describes the GT60M303 insulated gate bipolar transistor (IGBT) silicon chip from Toshiba. It is intended for high power switching applications and has features such as a fast switching time of 0.25 microseconds and low saturation voltage of 2.1 volts. The document provides information on the chip's maximum ratings, equivalent circuit, electrical characteristics, and restrictions on product use.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    GT60M303

    Uploaded by

    roozbehxox
    139 views6 pages
    The document describes the GT60M303 insulated gate bipolar transistor (IGBT) silicon chip from Toshiba. It is intended for high power switching applications and has features such as a fast switching time of 0.25 microseconds and low saturation voltage of 2.1 volts. The document provides information on the chip's maximum ratings, equivalent circuit, electrical characteristics, and restrictions on product use.

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    The document describes the GT60M303 insulated gate bipolar transistor (IGBT) silicon chip from Toshiba. It is intended for high power switching applications and has features such as a fast switching time of 0.25 microseconds and low saturation voltage of 2.1 volts. The document provides information on the chip's maximum ratings, equivalent circuit, electrical characteristics, and restrictions on product use.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    139 views6 pages

    GT60M303

    Uploaded by

    roozbehxox
    The document describes the GT60M303 insulated gate bipolar transistor (IGBT) silicon chip from Toshiba. It is intended for high power switching applications and has features such as a fast switching time of 0.25 microseconds and low saturation voltage of 2.1 volts. The document provides information on the chip's maximum ratings, equivalent circuit, electrical characteristics, and restrictions on product use.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    GT60M303

    TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

    GT60M303
    HIGH POWER SWITCHING APPLICATIONS
    Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) Unit: mm

    ABSOLUTE MAXIMUM RATINGS (Ta = 25C)


    CHARACTERISTIC CollectorEmitter Voltage GateEmitter Voltage Collector Current EmitterCollector Foward Current Collector Power Dissipation (Tc = 25C) Junction Temperature Storage Temperature Range Screw Torque DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IECF IECFP PC Tj Tstg RATING 900 25 60 120 15 120 170 150 55~150 0.8 UNIT V V A

    A W C C Nm

    JEDEC JEITA TOSHIBA

    2-21F2C

    Weight: 9.75 g (typ.)

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    EQUIVALENT CIRCUIT

    MARKING

    Part No. (or abbreviation code) TOSHIBA

    GT60M303
    Lot No.

    JAPAN
    A line indicates lead (Pb)-free package or lead (Pb)-free finish.

    2006-11-01

    GT60M303
    ELECTRICAL CHARACTERISTICS (Ta = 25C)
    CHARACTERISTIC Gate Leakage Current Collector Cutoff Current GateEmitter Cutoff Voltage CollectorEmitter Saturation Voltage CollectorEmitter Saturation Voltage Input Capacitance Rise Time Switching Time TurnOn Time Fall Time TurnOff Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance SYMBOL IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton tf toff VECF trr Rth (jc) Rth (jc) IEC = 15A, VGE = 0 IF = 15A, VGE = 0 di / dt = 20A / s IGBT Diode TEST CONDITION VGE = 25V, VCE = 0 VCE = 900V, VGE = 0 IC = 60mA, VCE = 5V IC = 10A, VGE = 15V IC = 60A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz MIN 3.0 TYP. 1.6 2.1 3800 0.35 0.46 0.25 0.60 1.5 0.7 MAX 500 1.0 6.0 2.2 2.7 0.60 0.75 0.40 0.70 2.0 2.5 0.74 4.0 V s C / W C / W s UNIT nA mA V V V pF

    2006-11-01

    GT60M303

    2006-11-01

    GT60M303

    2006-11-01

    GT60M303

    2006-11-01

    GT60M303

    RESTRICTIONS ON PRODUCT USE


    The information contained herein is subject to change without notice.

    20070701-EN

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

    2006-11-01

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