Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 74 views

    For Low Noise Audio Amplifier Applications and Recommended For The First Stages of MC Head Amplifiers

    Uploaded by

    lu1agp
    This transistor is a very low noise PNP epitaxial silicon transistor recommended for use in low noise audio amplifiers and the first stage of magnetic cartridge head amplifiers. It has an extremely low equivalent input noise voltage of just 0.6nV/Hz1/2, low pulse noise, and low 1/f noise. Its maximum ratings and electrical characteristics are provided including a typical DC current gain of 200-400 and collector-emitter saturation voltage of -0.6V.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    For Low Noise Audio Amplifier Applications and Recommended For The First Stages of MC Head Amplifiers

    Uploaded by

    lu1agp
    74 views4 pages
    This transistor is a very low noise PNP epitaxial silicon transistor recommended for use in low noise audio amplifiers and the first stage of magnetic cartridge head amplifiers. It has an extremely low equivalent input noise voltage of just 0.6nV/Hz1/2, low pulse noise, and low 1/f noise. Its maximum ratings and electrical characteristics are provided including a typical DC current gain of 200-400 and collector-emitter saturation voltage of -0.6V.

    Original Title

    2SA1316

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This transistor is a very low noise PNP epitaxial silicon transistor recommended for use in low noise audio amplifiers and the first stage of magnetic cartridge head amplifiers. It has an extremely low equivalent input noise voltage of just 0.6nV/Hz1/2, low pulse noise, and low 1/f noise. Its maximum ratings and electrical characteristics are provided including a typical DC current gain of 200-400 and collector-emitter saturation voltage of -0.6V.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views4 pages

    For Low Noise Audio Amplifier Applications and Recommended For The First Stages of MC Head Amplifiers

    Uploaded by

    lu1agp
    This transistor is a very low noise PNP epitaxial silicon transistor recommended for use in low noise audio amplifiers and the first stage of magnetic cartridge head amplifiers. It has an extremely low equivalent input noise voltage of just 0.6nV/Hz1/2, low pulse noise, and low 1/f noise. Its maximum ratings and electrical characteristics are provided including a typical DC current gain of 200-400 and collector-emitter saturation voltage of -0.6V.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2SA1316

    TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

    2SA1316
    For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers
    Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb = 2.0 (typ.) Complementary to 2SC3329 Unit: mm

    Maximum Ratings (Ta = 25C)


    Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -80 -80 -5 -100 -20 400 125 -55~125 Unit V V V mA mA mW C C

    JEDEC JEITA TOSHIBA

    TO-92 SC-43 2-5F1B

    Weight: 0.21 g (typ.)

    Electrical Characteristics (Ta = 25C)


    Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (Note) VCE (sat) VBE rbb fT Cob Test Condition VCB = -80 V, IE = 0 VEB = -5 V, IC = 0 IC = -1 mA, IB = 0 VCE = -6 V, IC = -2 mA IC = -10 mA, IB = -1 mA VCE = -6 V, IC = -2 mA VCE = -6 V, IC = -1 mA, f = 100 MHz VCE = -6 V, IC = -1 mA, f = 100 MHz VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 mA f = 10 Hz, RG = 10 kW Noise figure NF VCE = -6 V, IC = -0.1 mA f = 1 kHz, RG = 10 kW VCE = -6 V, IC = -0.1 mA f = 1 kHz, RG = 100 W Min -80 200 Typ. -0.6 2.0 50 6.2 1 Max -0.1 -0.1 700 -0.1 6 V V W MHz pF Unit mA mA V

    0.5

    dB

    2.5

    Note: hFE classification

    GR: 200~400, BL: 350~700

    2003-03-24

    2SA1316

    2003-03-24

    2SA1316

    2003-03-24

    2SA1316

    RESTRICTIONS ON PRODUCT USE

    000707EAA

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

    2003-03-24

    You might also like