300w tp9383 PDF

AN1037 Solid State Power Amplifier 300W FM 88-1 08 MHz
INTRODUCTION High efficiency multikilowat FM transmitters with full solid state amplifiers are possible today. The power amplifier of these transmitters should be made by multiparalleling of a basic building block amplifier. This building block should have a high output power and a high gain, a good collector efficiency, broadband (88-108 MHz) frequency response and a simple, reproducible and reliable circuit design. This application note describes an FM budding block amplifier that meets the requirements mentioned above and that can be successfully incorporated to a number of amplifier architectures. The amplifier has been developed with a pair of TP 9383 transstors in push-pull configuration. TP 9383 is a double diffused silicon epitaxial transistor that makes use of gold metallization and diffused ballast resistors for long operationg life and ruggedness Its base specifications are
VC(. 28 V
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75 K. at 108 MHz and 150W output power G

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150W
DESIGN CONSIDERATIONS When designing an FM amprifier the total effceo?v m

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he toe f,rst goal
Overall efficiency is the combination of good colie?t eHo erizy and high gain To get a good collector efficiency the transistors must be operated in class C and the load impedance should match the transistors output impedance at the operation puAer eve! Clase C iraplifiers are non-linear units. The harmonic content of the output signal of tfiis type of amphf.ers can nemry high and their power wasted with an important reduction in the efficiency
253
This fact made advantageous the use of balanced amplifiers. In such circuit arrangement all the even harmonic are largely suppressed and the waste of power minimized. Push-pull amplifiers have also the additional advantages of connecting in series for RF operation the input and output impedance of the 2 transistors. That makes considerably easier to match the input and output impedances of the transistor pair. However, as the impedance transformation is lower, the RF power losses are smaller and the gain and efficiency higher. Another important consideration in the design of an FM amplifier is the ruggedness of the amplifier. FM transmitters are often operated 24 hours per day and sometimes remotly controlled and in difficult access sites. The operating point of the transistors should be chosen in a conservative way and the heat properly evacuated. A thermo switch should he incorporated to the system. The amplifier must also be able to withstand output VSWR Although all transmitters use to incorporate VSWR protection in their interlocky systems, the amplifier must be designed with the capability of supporting VSWR of 3.1 as a minimum. This point can be very determinent when considering that on a high efficiency circuit the collector voltage swing can be close to 3 times the collector supply voltage. CIRCUIT DESCRIPTION Circuit schematic is given in the Figure 1 At the amplifier input there is a two section balun. The first section. L 1, consists of a short lenght (= ,./20) of 50 (2 coaxial semirigid cable. The outer conductor of the coaxial cable is grounded at the input side and floats at the output. The second section of the balun consists of two identical coaxial cables, L2 and L3, of the same length that L1 but with 25 (2 characteristic impedance. The ends of these two coaxials are interconnected in series at the input side (thus offering 50 (2 impedance to L1) and in parallel at the output of the section. The combined balanced impedance will be therefore 1 2.5 (~ at the output of the balun. The input impedance of the transistor pair Q1 and Q2 is transformed to 12.5 (2 (2 x 6.25) with the LC network represented in the schematic. If this balun is well charged by 2 ~ 6.25 (2 it is well capable of muttioctave operation. However in this case the LC network that transform the impedances of the transistor pair has been optimized only between 88 and 108 MHz. A similar balun circuit is used at the output of the amplifier. The main difference with the input balun is that the coaxial cables are also used in the collect biasing circuit. Care has been taken with the decoupling of the collect bias in order to avoid low frequency oscillations. The collect impedance is higher than the base impedance and therefore the LC output transforming network is very simp le, only L8, L9 and C7.
88-108 MHz; 300 W 28 V Figure 1. FM Broadband Power Amplifier
254
COMPONENTS LIST C 02 C3, C 120 + 80 pF Chip capacitor ATO 100 B 220 pF Chip capacitor ATC 100 8 -- 470 pF Chip capacitor ATO 100 B 4, C5, C 100 pF Chip capacitor ATO 100 B 07 27 pF Chip capacitor ATC 100 B Cs 04, Cio. Cii, C14 1 000 pF Disc capacitor 10 nF 012, 015 013, Cjl~, Ciii - 0,1 ~iF -- 1 000 ~F/63 V Electrolytic
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L2, L3 L4 L5 L6, L7 L~, L9 L10, L11 L12 L13 R1. R2 R3

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50 (2 coaxial cable 0 3,2 mm (Teflon) L 110 mm 25(2 coaxial cable ~ 3,2mm (Teflon) L = 110mm Hair pin copper foil 18 x 3 mm 0,3 mm thickness Line on substrate 15 ~ 5 mm Line on substrate 10 < 5 mm 25 (2 coaxial cable ~ 5 mm (Teflon) L 110 mm 50 (1 coaxial cable o 5 mm (Teflon) L = 110 mm 15 turns z 8 mm 1,4 mm wire 22 (2 1/2 W 47 (2 2 W TP 9383
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300 W PUSH-PULL FM TP 9383
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35W rt r Figure 2. Component Layout ~ 20W ~. .,-T. - 7111

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Figure 3. Output Power versus Input Power and Frequency
Figure 4. Gain and Efficiency versus Frequency
255
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AN1037 Solid State Power Amplifier 300W FM 88-1 08 MHz

75 K. at 108 MHz and 150W output power G

DESIGN CONSIDERATIONS When designing an FM amprifier the total effceo?v m

he toe f,rst goal

88-108 MHz; 300 W 28 V Figure 1. FM Broadband Power Amplifier

L2, L3 L4 L5 L6, L7 L~, L9 L10, L11 L12 L13 R1. R2 R3

300 W PUSH-PULL FM TP 9383

35W rt r Figure 2. Component Layout ~ 20W ~. .,-T. - 7111

-~ ~ -. ~ 2tV ~---i VCE rn~zzzm

Figure 3. Output Power versus Input Power and Frequency

Figure 4. Gain and Efficiency versus Frequency

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