5STR 03T2040

TS - TP/273/08b Apr-12 1 of 8

5STR 03T2040
Old part no. TP 907FC-320-20
Reverse Conducting Thyristor
Properties Key Parameters
Integrated freewheeling diode
V
DRM
= 2 000 V
Optimized for low dynamic losses
I
TAVm
= 360 A
I
TSM
= 5 000 A
V
TO
= 1.550 V
Applications r
T
= 1.010 mO
Traction
t
q
= 40 s

Types
V
DRM

5STR 03T2040 2 000 V
Conditions:
T
j
= -40 125 C, half sine waveform,
f = 50 Hz

Mechanical Data
F
m
Mounting force 13 3 kN
m Weight 0.20 kg
D
S
Surface
creepage
distance
13 mm
D
a
Air strike
distance
8 mm





Fig. 1 Case

ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 2 of 8

Maximum Ratings - Thyristor Maximum Limits Unit
V
DRM


Repetitive peak off-state voltage

T
j
= -40 125 C
2 000
V

I
TRMS
RMS on-state current

T
c
= 70 C, half sine waveform, f = 50 Hz
566 A
I
TAVm
Average on-state current

T
c
= 70 C, half sine waveform, f = 50 Hz
360

A
I
TSM
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
t
p
= 10 ms
t
p
= 8.3 ms
5 000
5 300
A
I
2
t Limiting load integral
half sine pulse, V
R
= 0 V
t
p
= 10 ms
t
p
= 8.3 ms
125 000
118 000
A
2
s
(di
T
/dt)
cr
Critical rate of rise of on-state current
I
T
= 1 000 A, V
D
= 0.67 V
DRM
,
half sine waveform, f = 50 Hz
400 A/s
(dv
D
/dt)
cr
Critical rate of rise of off-state voltage
V
D
= 0.67 V
DRM

1 000 V/s
P
AV
Maximum average gate power losses 5 W
I
GTM
Peak gate current 25 A
V
GTM
Peak gate voltage 15 V
V
RGTM
Reverse peak gate voltage 2 V
T
jmin
- T
jmax
Operating temperature range -40 125 C
T
stgmin
-
T
stgmax

Storage temperature range -40 125 C
Unless otherwise specified T
j
= 125 C

Maximum Ratings - Diode Maximum Limits Unit
V
RRM
Repetitive peak reverse voltage
T
j
= -40 125 C
2 000
V

I
FRMS
RMS forward current

T
c
= 70 C, half sine waveform, f = 50 Hz
351 A
I
FAVm
Average forward current

T
c
= 70 C, half sine waveform, f = 50 Hz
223

A
I
FSM
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
t
p
= 10 ms
t
p
= 8.3 ms
3 500
3 800
A
I
2
t Limiting load integral
half sine pulse, V
R
= 0 V
t
p
= 10 ms
t
p
= 8.3 ms
61 000
58 000
A
2
s
Unless otherwise specified T
j
= 125 C




5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 3 of 8

Characteristics Thyristor Value Unit
min. typ. max.
V
TM
Maximum peak on-state voltage
I
TM
= 1 000 A
2.610

V
V
T0
Threshold voltage 1.550 V
r
T
Slope resistance
I
T1
= 500 A, I
T2
= 1 500 A
1.010 mO
I
DM
Peak off-state current
V
D
= V
DRM

70 mA
t
gd
Delay time
T
j
= 25 C, V
D
= 100 V, I
TM
= 320 A, t
r
= 0.5 s, I
GT
= 2 A
1 s
t
gt
Switch-on time
the same conditions as at t
gd

4 s
t
q
Turn-off time
I
T
= 320 A, di
T
/dt = -50 A/s,
V
D
= 0.67 V
DRM
, dv
D
/dt = 50 V/s
40 s
I
H
Holding current T
j
= 25 C
T
j
= 125 C
100 mA
I
L
Latching current T
j
= 25 C
T
j
= 125 C
500 mA
V
GT
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
T
j
= - 40 C
T
j
= 25 C
T
j
= 125 C


0.25
4.5
2.5
2.0
V
I
GT


Gate trigger current
V
D
= 12V, I
T
= 4 A
T
j
= - 40 C
T
j
= 25 C
T
j
= 125 C


10
1000
400
250
mA
Unless otherwise specified T
j
= 125 C















5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 4 of 8

Characteristics Diode Value Unit
min. typ. max.
V
FM
Maximum forward voltage
I
FM
= 1 000 A
3.420 V
V
T0
Threshold voltage
I
F1
= 310 A, I
F2
= 940 A
1.340 V
r
T
Forward slope resistance 2.100 mO
Q
rr
Reverse recovery charge
I
FM
= 200 A, di
F
/dt = -50 A/s, V
D
= 100 V
250 C
I
rrM
Maximum reverse recovery current
the same conditions as at Q
rr

150 A
t
rr
Reverse recovery time
the same conditions as at Q
rr

4 s
Unless otherwise specified T
j
= 125 C

Thermal Parameters - Thyristor Value Unit
R
thjc
Thermal resistance junction to case
double side cooling
55 K/kW

anode side cooling 91

cathode side cooling 140
R
thch
Thermal resistance case to heatsink
double side cooling
10 K/kW

single side cooling 20

Thermal Parameters - Diode Value Unit
R
thjc
Thermal resistance junction to case
double side cooling
88 K/kW

anode side cooling 190

cathode side cooling 165

5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 5 of 8

Transient Thermal Impedance - Thyristor
Correction for periodic
waveforms - Thyristor
180 sine: add 7.4 K/kW
180 rectangular: add 8.4 K/kW
120 rectangular: add 13.8 K/kW
60 rectangular: add 23.8 K/kW


Analytical function for transient
thermal impedance

=
=
5
1
)) / exp( 1 (
i
i i thjc
t R Z t


Conditions:
F
m
= 13 3 kN, Double side cooled

i 1 2 3 4 5
t
i
( s ) 1.62 0.111 0.0236 0.00322 0.307e-3
R
i
( K/kW ) 3.77 36.70 9.64 3.54 1.38

0
10
20
30
40
50
60
0,001 0,01 0,1 1 10 100
Square wave pulse duration t
d
( s )
T
r
a
n
s
i
e
n
t

t
h
e
r
m
a
l

i
m
p
e
d
a
n
c
e

j
u
n
c
t
i
o
n

t
o

c
a
s
e

Z
t
h
j
c

(

K
/
k
W

)

Fig. 2 Dependence transient thermal impedance junction
to case on square pulse - Thyristor
Diode
Correction for periodic
waveforms - Diode
180 sine: add 10.7 K/kW
180 rectangular: add 11.1 K/kW
120 rectangular: add 18.2 K/kW
60 rectangular: add 31.9 K/kW

i 1 2 3 4 5
t
i
( s ) 0.401 0.108 0.0267 0.0034 0.584e-3
R
i
( K/kW ) 23.00 41.00 17.20 3.47 2.50


0
10
20
30
40
50
60
70
80
90
0,001 0,01 0,1 1 10 100
Square wave pulse duration t
d
( s )
T
r
a
n
s
i
e
n
t

t
h
e
r
m
a
l

i
m
p
e
d
a
n
c
e

j
u
n
c
t
i
o
n

t
o

c
a
s
e

Z
t
h
j
c

(

K
/
k
W

)

Fig. 3 Dependence transient thermal impedance junction
to case on square pulse - Diode


5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 6 of 8

0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
V
T
( V )
I
T

(

A

)
125 C T
j
= 25 C


Fig. 4 Maximum on-state characteristics Fig. 5 Surge on-state current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax


0,1
1
10
100
0,1 1 10 100
I
FGM
( A )
t
g
d

(

s

)

10
20
30
40
50
60
70
80
90
100
20 40 60 80 100 120 140
T
j
( C )
%
min.
max.
average

Fig. 6 Delay time vs. forward gate current,
T
j
= 25 C, V
D
= 100 V, I
TM
= I
TAVm
,
t
r
s 0.5 s, t
p
=1 ms
Fig. 7 Relative value of turn-off time
vs. junction temperature

5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 7 of 8

0
200
400
600
800
1000
0 100 200 300 400 500
I
TAV
( A )
P
T

(

W

)
= 30 60 90 120 180
DC

0
200
400
600
800
1000
0 100 200 300 400 500
I
TAV
( A )
P
T

(

W

)
= 30 60 90 120 180
270
DC

Fig. 8 On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 9 On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f

60
70
80
90
100
110
120
130
0 100 200 300 400 500
I
TAV
( A )
T
C

(

C

)
180 60 90 120 = 30
DC

60
70
80
90
100
110
120
130
0 100 200 300 400 500
I
TAV
( A )
T
C

(

C

)
180
DC
270 120 90 60 = 30

Fig. 10 Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 11 Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f



5STR 03T2040
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/273/08b Apr-12 8 of 8

0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
V
F
( V )
I
F

(

A

)125 C T
j
= 25 C


Fig. 12 Maximum forward voltage drop
characteristics of the diode
Fig. 13 Surge on-state current vs. pulse length
of the diode. Half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax


Notes: