MCC162 16io1

MCC162-16io1
Thyristor Module
VRRM
= 2x 1600 V
I TAV
181 A
VT
1.03 V
Phase leg
Part number
MCC162-16io1
Backside: isolated
Features / Advantages:
Applications:
Package: Y4
Thyristor for line frequency

Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Line rectifying 50/60 Hz

Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Isolation Voltage: 3600 V~

Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
MCC162-16io1
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25C
1600
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
VR/D = 1600 V
TVJ = 25C
300
TVJ = 125C
10
mA
I T = 150 A
TVJ = 25C
1.09
1.25
1.03
TVJ = 125 C
I T = 150 A
I T = 300 A
I TAV
average forward current
TC = 85 C
I T(RMS)
RMS forward current
180 sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
RthCH
thermal resistance case to heatsink

total power dissipation
I TSM
max. forward surge current
It
value for fusing
VR/D = 1600 V
I T = 300 A
Ptot
max. Unit
1700
V
1.25
T VJ = 125 C
181
300
TVJ = 125 C
0.88
1.15
0.155 K/W
0.07
K/W
TC = 25C
645
t = 10 ms; (50 Hz), sine
TVJ = 45C
6.00
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
6.48
kA
t = 10 ms; (50 Hz), sine
TVJ = 125 C
5.10
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
5.51
kA
t = 10 ms; (50 Hz), sine
TVJ = 45C
180.0 kAs
t = 8,3 ms; (60 Hz), sine
VR = 0 V
174.7 kAs
t = 10 ms; (50 Hz), sine
TVJ = 125 C
130.1 kAs
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25C
PGM
max. gate power dissipation
t P = 30 s
T C = 125 C
126.3 kAs
273
t P = 500 s
pF
120
60
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 125 C; f = 50 Hz
repetitive, IT = 540 A
t P = 200 s; di G /dt = 0.5 A/s;
(dv/dt)cr
critical rate of rise of voltage
V = VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 C
TVJ = -40 C
2.6
I GT
gate trigger current
VD = 6 V
TVJ = 25 C
150
mA
TVJ = -40 C
200
mA
VGD
gate non-trigger voltage
TVJ = 125C
0.2
I GD
gate non-trigger current
10
mA
IL
latching current
TVJ = 25 C
300
mA
IG =
0.5 A; V = VDRM
150 A/s
non-repet., I T = 180 A
500 A/s
1000 V/s
TVJ = 125C
R GK = ; method 1 (linear voltage rise)
VD = VDRM
tp =
30 s
IG =
0.5 A; di G /dt =
2.5
0.5 A/s
IH
holding current
VD = 6 V R GK =
TVJ = 25 C
200
mA
t gd
gate controlled delay time
VD = VDRM
TVJ = 25 C
tq
turn-off time
IG =
0.5 A; di G /dt =
0.5 A/s
VR = 100 V; I T = 300 A; V = VDRM TVJ =100 C

di/dt = 10 A/s dv/dt =
150
20 V/s t p = 200 s
20160408b
MCC162-16io1
Package
Ratings
Y4
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
300
Unit
A
-40
125
-40
100
125
150
Weight
MD
mounting torque
MT
terminal torque
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
terminal to terminal
14.0
terminal to backside
16.0
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
2.25
2.75
Nm
4.5
5.5
Nm
10.0
mm
16.0
mm
3600
3000
Circuit
Date Code +
Prod. Index
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Ordering
Standard
Ordering Number
MCC162-16io1
Equivalent Circuits for Simulation

I
V0
R0
Marking on Product
MCC162-16io1
* on die level
Delivery Mode
Box
Code No.
429619
T VJ = 125 C
Thyristor
V 0 max
threshold voltage
0.88
R0 max
slope resistance *
0.8
Quantity
6
20160408b
MCC162-16io1
Outlines Y4
M6
2.8 / 0.8
Dim.
MIN
[mm]
MIN
[mm]
MIN
[inch]
MIN
[inch]
30.0
30.6
1.181
1.205
h
i
3 C
A (3:1)
64.0
65.0
2.520
2.559
6.5
7.0
0.256
0.275
4.9
5.1
0.193
0.201
28.6
29.2
1.126
1.150
7.3
7.7
0.287
0.303
93.5
94.5
3.681
3.720
79.5
80.5
3.130
3.169
4.8
5.2
0.189
0.205
33.4
34.0
1.315
1.339
B-B (1:1)
16.7
17.3
0.657
0.681
22.7
23.3
0.894
0.917
22.7
23.3
0.894
0.917
14.0
15.0
0.551
0.591
B
n
typ. 0.010
10
11
typ. 0.25
typ. 10.5
typ. 0.413
22.8
23.3
0.898
0.917
1.8
2.4
0.071
0.041
C-C (1:1)
b
e
DCB
n
20160408b
MCC162-16io1
Thyristor
106
5000
320
4000
ITSM
DC
180 sin
120
60
30
280
50 Hz
80% VRRM
TVJ = 45C
TVJ = 125C
240
I2dt
3000
[A]
105
2000
ITAVM
TVJ = 45C
160
[A]
TVJ = 125C
[A2s]
200
120
80
1000
40
104
0
0.001
0.01
0.1
0
1
10
75 100 125 150
Fig. 2 I t versus time (1-10 ms)
Fig. 3 Max. forward current

at case temperature
400
100
RthKA K/W
360
tp = 30 s
tp = 500 s
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
320
280
Ptot 240
PGM = 120 W
60 W
10 P = 8 W
GAV
VG
DC
180 sin
120
60
30
160
1
125C
120
[V]
80
40
0
0
50
100 150 200 250
25
50
ITAVM [A]
75
100
125
0.1
0.01
150
Ta [C]
IGT (TVJ = -40C)

IGT (TVJ = 0C)
IGT (TVJ = 25C)
25C
200
[W]
50
TC [C]
Fig. 1 Surge overload current ITSM,

IFSM: Crest value, t: duration
25
t [ms]
t [s]
IGD
0.1
10
IG [A]
Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)
Fig. 5 Gate trigger characteristics
100
1400
0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3
1200
Circuit
B6
3xMCC162 or
1000
Ptot
[W]
TVJ = 25C
RthKA K/W
3x MCD162
800
10
tgd
[s]
600
limit
typ.
400
200
0
0
100
200
300
400
500 0
25
IdAVM [A]
50
75
100
125
T a [C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature
150
0.1
0.01
0.1
10
IG [A]
Fig. 7 Gate trigger delay time
20160408b
MCC162-16io1
Thyristor
1600
1200
Ptot
RthKA K/W
Circuit
W3
3xMCC162 or
3xMCD162
0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3
800
[W]
400
0
0
100
200
300
400
25
50
IRMS [A]
75
100
125
150
Ta [C]
Fig. 8 Three phase AC-controller: Power dissipation versus

RMS output current and ambient temperature
0.24
RthJC for various conduction angles d:
d
RthJC [K/W]
DC
0.155
180
0.167
120
0.176
60
0.197
30
0.227
0.16
ZthJC
30
60
120
180
DC
[K/W]
0.08
0.00
10-3
10-2
10-1
100
Constants for ZthJC calculation:
101
102
i Rthi [K/W]
1 0.0072
2 0.0188
3 0.1290
ti [s]
0.001
0.080
0.200
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
0.3
RthJK for various conduction angles d:
d
RthJK [K/W]
DC
0.225
180
0.237
120
0.246
60
0.267
30
0.297
0.2
30
60
120
180
DC
ZthJK
[K/W] 0.1
0.0
10-3
Constants for ZthJK calculation:

i Rthi [K/W]
1 0.0072
2 0.0188
3 0.1290
4 0.0700
10-2
10-1
100
101
ti [s]
0.001
0.080
0.200
1.000
102
t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
20160408b

MCC162 16io1

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MCC162-16io1

Thyristor for line frequency

Line rectifying 50/60 Hz

Isolation Voltage: 3600 V~

Terms Conditions of usage:

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

reverse current, drain current

forward voltage drop

average forward current

RMS forward current

thermal resistance junction to case

for power loss calculation only

thermal resistance case to heatsink

max. forward surge current

value for fusing

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

max. gate power dissipation

average gate power dissipation

critical rate of rise of current

critical rate of rise of voltage

gate trigger voltage

gate trigger current

gate non-trigger voltage

gate non-trigger current

R GK = ; method 1 (linear voltage rise)

gate controlled delay time

VR = 100 V; I T = 300 A; V = VDRM TVJ =100 C

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

virtual junction temperature

creepage distance on surface | striking distance through air

50/60 Hz, RMS; IISOL 1 mA

Equivalent Circuits for Simulation

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

75 100 125 150

Fig. 2 I t versus time (1-10 ms)

Fig. 3 Max. forward current

100 150 200 250

IGT (TVJ = -40C)

Fig. 1 Surge overload current ITSM,

Fig. 4 Power dissipation vs. on-state current & ambient temperature