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Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 8M x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and Self Refresh 8192 refresh cycles / 64ms Precharge & active power down Power supplies: VDD & VDDQ = 2.5V 5% Interface: SSTL_2 I/O Interface Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb and Halogen free

EM6AB160TSA
Advanced (Rev. 1.3 May / 2009) Table 1.Ordering Information
Clock Data Rate Package Frequency EM6AB160TSA-5G 200MHz 400Mbps/pin TSOPII Part Number
TS : indicates TSOPII package A: indicates Generation Code G: indicates Pb and Halogen free

32M x 16 bit DDR Synchronous DRAM (SDRAM)

Figure 1. Pin Assignment (Top View)

VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM CK CK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS

Overview
The EM6AB160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internally configured as a quad 8M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK .d Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM6AB160 provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a selftimed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, EM6AB160 features programmable DLL option. By having a programmable mode register and extended mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth, result in a device particularly well suited to high performance main memory and graphics applications.

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.

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Figure 2. Block Diagram

EM6AB160TSA

CK CK CKE

DLL CLOCK BUFFER

Row Decoder Row Decoder Row Decoder Row Decoder

CS RAS CAS WE

COMMAND DECODER

CONTROL SIGNAL GENERATOR

8M x 16 CELL ARRAY (BANK #0) Column Decoder

A10/AP

COLUMN COUNTER

MODE REGISTER

8M x 16 CELL ARRAY (BANK #1) Column Decoder

A0 A9 A11 A12 BA0 BA1 LDQS UDQS DQ0 DQ15 ~ ~

ADDRESS BUFFER

REFRESH COUNTER

8M x 16 CELL ARRAY (BANK #2) Column Decoder

DATA STROBE BUFFER

DQ Buffer

8M x 16 CELL ARRAY (BANK #3) Column Decoder

LDM UDM

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Pin Descriptions Table 2. Pin Details of EM6AB160
Symbol CK, CK Type Input Description

EM6AB160TSA

Differential Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK . Input and output data is referenced to the crossing of CK and CK (both directions of the crossing) Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes low synchronously with clock, the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains low. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. Bank Activate: BA0 and BA1 define to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. Address Inputs: A0-A12 are sampled during the BankActivate command (row address A0-A12) and Read/Write command (column address A0-A9 with A10 defining Auto Precharge). Chip Select: CS enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS is sampled HIGH. CS provides for external bank selection on systems with multiple banks. It is considered part of the command code. Row Address Strobe: The RAS signal defines the operation commands in conjunction with the CAS and WE signals and is latched at the positive edges of CK. When RAS and CS are asserted "LOW" and CAS is asserted "HIGH," either the BankActivate command or the Precharge command is selected by the WE signal. When the WE is asserted "HIGH," the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE is asserted "LOW," the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. Column Address Strobe: The CAS signal defines the operation commands in conjunction with the RAS and WE signals and is latched at the positive edges of CK. When RAS is held "HIGH" and CS is asserted "LOW," the column access is started by asserting CAS "LOW." Then, the Read or Write command is selected by asserting WE "HIGH" or LOW. Write Enable: The WE signal defines the operation commands in conjunction with the RAS and CAS signals and is latched at the positive edges of CK. The WE input is used to select the BankActivate or Precharge command and Read or Write command. Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data and DQM. LDQS is for DQ0~7, UDQS is for DQ8~15. Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. LDM masks DQ0-DQ7, UDM masks DQ8-DQ15. Data I/O: The DQ0-DQ15 input and output data are synchronized with the positive edges of CK and CK . The I/Os are byte-maskable during Writes. Power Supply: 2.5V 5% .

CKE

Input

BA0, BA1 A0-A12

Input Input

CS

Input

RAS

Input

CAS

Input

WE

Input

LDQS, UDQS LDM, UDM DQ0 - DQ15 VDD

Input / Output Input

Input / Output Supply

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VSS VDDQ VSSQ VREF NC Supply Supply Supply Supply Ground

EM6AB160TSA

DQ Power: 2.5V 5% . Provide isolated power to DQs for improved noise immunity. DQ Ground: Provide isolated ground to DQs for improved noise immunity. Reference Voltage for Inputs: +0.5*VDDQ No Connect: These pins should be left unconnected.

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Operation Mode
Table 3 shows the truth table for the operation commands.

EM6AB160TSA

Table 3. Truth Table (Note (1), (2))

Command
BankActivate BankPrecharge PrechargeAll Write Write and AutoPrecharge Read Read and Autoprecharge Mode Register Set Extended MRS No-Operation Burst Stop Device Deselect AutoRefresh SelfRefresh Entry SelfRefresh Exit

State

CKEn-1 CKEn UDM LDM BA0,1 A10 A0-9, 11-12 CS RAS CAS

WE

Idle(3) Any Any Active(3) Active(3) Active(3) Active(3) Idle Idle Any Active(4) Any Idle Idle Idle
(SelfRefresh)

H H H H H H H H H H H H H H L H L H L H

X X X X X X X X X X X X H L H L H L H X

X X X X X X X X X X X X X X X X X X X L

X X X X X X X X X X X X X X X X X X X L

V V X V V V V

Row address L H L H L H X X
Column address (A0 ~ A9) Column address (A0 ~ A9)

L L L L L L L L L

L L L H H H H L L H H X L L X H X H X H X V X H X X

H H H L L L L L L H H X L L X H X H X H X V X H X X

H L L L L H H L L H L X H H X H X H X H X V X H X X

OP code OP code X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X

L L H L L H L H L H L H L H L X

Precharge Power Down Mode Entry Precharge Power Down Mode Exit Active Power Down Mode Entry Active Power Down Mode Exit Data Input Mask Disable Data Input Mask Enable(5)

Idle Any
(PowerDown)

Active Any
(PowerDown)

Active

Active H X H H X X X X Note: 1. V=Valid data, X=Don't Care, L=Low level, H=High level 2. CKEn signal is input level when commands are provided. CKEn-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BA signal. 4. Device state is 2, 4, and 8 burst operation. 5. LDM and UDM can be enabled respectively.

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Mode Register Set (MRS)

EM6AB160TSA

The Mode Register stores the data for controlling various operating modes of a DDR SDRAM. It programs CAS Latency, Burst Type, and Burst Length to make the DDR SDRAM useful for a variety of applications. The default value of the Mode Register is not defined; therefore the Mode Register must be written by the user. Values stored in the register will be retained until the register is reprogrammed. The Mode Register is written by asserting Low on CS , RAS , CAS , WE , BA1 and BA0 (the device should have all banks idle with no bursts in progress prior to writing into the mode register, and CKE should be High). The state of address pins A0~A12 and BA0, BA1 in the same cycle in which CS , RAS , CAS and WE are asserted Low is written into the Mode Register. A minimum of two clock cycles, tMRD, are required to complete the write operation in the Mode Register. The Mode Register is divided into various fields depending on functionality. The Burst Length uses A0~A2, Burst Type uses A3, and CAS Latency (read latency from column address) uses A4~A6. A logic 0 should be programmed to all the undefined addresses to ensure future compatibility. Reserved states should not be used to avoid unknown device operation or incompatibility with future versions. Refer to the table for specific codes for various burst lengths, burst types and CAS latencies.

Table 4. Mode Register Bitmap

BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field

RFU must be set to 0

T.M.

CAS Latency

BT

Burst Length

Mode Register

A8 0 1 X

A7 Test Mode 0 Normal mode 0 DLL Reset 1 Test mode

BA0 Mode 0 MRS 1 EMRS

A6 0 0 0 0 1 1 1 1

A5 0 0 1 1 0 0 1 1

A4 CAS Latency 0 Reserved 1 Reserved 0 2 1 3 0 Reserved 1 Reserved 0 2.5 1 Reserved

A3 Burst Type 0 Sequential 1 Interleave

A2 0 0 0 0 1 1 1 1

A1 0 0 1 1 0 0 1 1

A0 Burst Length 0 Reserved 1 2 0 4 1 8 0 Reserved 1 Reserved 0 Reserved 1 Reserved

Burst Length Field (A2~A0) This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2, 4, 8.

Table 5. Burst Length

A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 Burst Length Reserved 2 4 8 Reserved Reserved Reserved Reserved

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Table 6. Addressing Mode
A3 0 1

EM6AB160TSA

Addressing Mode Select Field (A3) The Addressing Mode can be one of two modes, either Interleave Mode or Sequential Mode. Both Sequential Mode and Interleave Mode support burst length of 2, 4 and 8.

Addressing Mode Sequential Interleave

Burst Definition, Addressing Sequence of Sequential and Interleave Mode

Table 7. Burst Address ordering

Burst Length 2 A2 X X X X X X 0 0 0 0 1 1 1 1 Start Address A1 A0 X 0 X 1 0 0 0 1 1 0 1 1 0 0 0 1 1 0 1 1 0 0 0 1 1 0 1 1 Sequential 0, 1 1, 0 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 7, 0, 1, 2, 3, 4, 5, 6 Interleave 0, 1 1, 0 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0

CAS Latency Field (A6~A4) This field specifies the number of clock cycles from the assertion of the Read command to the first read data. The minimum whole value of CAS Latency depends on the frequency of CK. The minimum whole value satisfying the following formula must be programmed into this field. tCAC(min) CAS Latency X tCK

Table 8. CAS Latency

A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 clocks 3 clocks Reserved Reserved 2.5 clocks Reserved

Test Mode field (A8~A7) These two bits are used to enter the test mode and must be programmed to "00" in normal operation.

Table 9. Test Mode

A8 0 1 A7 0 0 Test Mode Normal mode DLL Reset

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( BA0, BA1)

EM6AB160TSA

Table 10. MRS/EMRS

BA1 RFU RFU BA0 0 1 A12 ~ A0 MRS Cycle Extended Functions (EMRS)

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Extended Mode Register Set (EMRS)

EM6AB160TSA

The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver strength. The default value of the extended mode register is not defined, therefore must be written after power up for proper operation. The Extened Mode Register is written by asserting Low on CS , RAS , CAS , WE , BA1 and BA0 (the device should have all banks idle with no bursts in progress prior to writing into the mode register, and CKE should be High). The state of A0 ~ A12, BA0 and BA1 is written in the mode register in the same cycle as CS , RAS , CAS , and WE going low. The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register. A1 is used for setting driver strength to normal, or weak. Two clock cycles are required to complete the write operation in the extended mode register. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for specific codes.

Table 11. Extended Mode Register Bitmap

BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field

RFU must be set to 0

DS0 DLL Extend Mode Register

BA0 0 1

Mode MRS EMRS

A1 0 1

Drive Strength Full Weak

A0 0 1

DLL Enable Disable

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Table 12.Absolute Maximum Rating
Symbol Item Rating

EM6AB160TSA
Unit

VIN, VOUT VDD, VDDQ TA TSTG TSOLDER PD

Input, Output Voltage Power Supply Voltage Ambient Temperature Storage Temperature Soldering Temperature Power Dissipation

- 0.5~ VDDQ + 0.5 - 1~3.6 0~70 - 55~150 260 1.5

V V C C C W

IOUT Short Circuit Output Current 50 mA Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Note2: These voltages are relative to Vss

Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 C)

Parameter Symbol Min. Max. Unit Note

Power Supply Voltage Power Supply Voltage (for I/O Buffer) Input Reference Voltage Input High Voltage (DC) Input Low Voltage (DC) Termination Voltage Input Voltage Level, CLK and CLK inputs Input Different Voltage, CLK and CLK inputs Input leakage current Output leakage current Output High Voltage Output Low Voltage Note : All voltages are referenced to VSS.

VDD VDDQ VREF

2.375 2.375 0.49*VDDQ

2.625 2.625 0.51* VDDQ VDDQ + 0.3 VREF 0.15 VREF + 0.04 VDDQ + 0.3 VDDQ + 0.6 2 5 VTT 0.76

V V V V V V V V
A A

VIH (DC) VREF + 0.15 VIL (DC) VTT VIN (DC) VID (DC) II IOZ VOH VOL -0.3 VREF - 0.04 -0.3 0.36 -2 -5 VTT + 0.76 -

V V

IOH = -15.2 mA IOL = +15.2 mA

Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 C)

Symbol Parameter Min. Max. Unit

CIN1 CIN2

Input Capacitance (CK, CK ) Input Capacitance (All other input-only pins)

2.5 2.5

3.5 3.5

pF pF

CI/O DQ, DQS, DM Input/Output Capacitance 4.0 5.0 pF Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested

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Table 15. D.C. Characteristics (VDD = 2.5V 5%, TA = 0~70 C)
Parameter & Test Condition OPERATING CURRENT: One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock cycles. OPERATING CURRENT : One bank; Active-ReadPrecharge; BL=4; tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs changing once per clock cycle PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-down mode; tCK=tCK(min); CKE=LOW IDLE STANDLY CURRENT : CKE = HIGH; CS =HIGH(DESELECT); All banks idle; tCK=tCK(min); Address and control inputs changing once per clock cycle; VIN=VREF for DQ, DQS and DM ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-down mode; CKE=LOW; tCK=tCK(min) ACTIVE STANDBY CURRENT : CS =HIGH;CKE=HIGH; one bank active ; tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle OPERATING CURRENT BURST READ : BL=2; READS; Continuous burst; one bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); lout=0mA;50% of data changing on every transfer OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous Burst ;one bank active; address and control inputs changing once per clock cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50% of data changing on every transfer AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min) SELF REFRESH CURRENT: Sell Refresh Mode ; CKE 0.2V;tCK=tCK(min) Symbol

EM6AB160TSA
-5 Max.

Unit Notes

IDD0

220

mA

IDD1 IDD2P

250 40

mA mA

IDD2N

70

mA

IDD3P

55

mA

IDD3N

100

mA

IDD4R

420

mA

IDD4W

420

mA

IDD5 IDD6

290 6

mA mA 1

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(VDD = 2.5V 5%, TA = 0~70 C) Symbol Parameter -5

EM6AB160TSA

Table 16.Electrical Characteristics and Recommended A.C.Operating Condition

tCK tCH tCL tHP tHZ tLZ tDQSCK tAC tDQSQ tRPRE tRPST tDQSS tWPRES tWPRE tWPST tDQSH tDQSL tIS tIH tDS tDH tQH tRC tRFC tRAS tRCD tRP tRRD tWR tWTR tMRD tREFI tXSRD tXSNR tDAL tDIPW tIPW

Clock cycle time Clock high level width Clock low level width Clock half period

CL = 2 CL = 2.5 CL = 3

Min. 7.5 6 5 0.45 0.45 tCLMIN or tCHMIN

Max. 10 10 10 0.55 0.55 -

Unit Note

ns ns ns tCK tCK ns ns ns ns ns ns tCK tCK tCK ns tCK tCK tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns tCK ns s tCK ns ns ns ns

2 3 3

Data-out-high impedance time from CK, CK Data-out-low impedance time from CK, CK DQS-out access time from CK, CK Output access time from CK, CK DQS-DQ Skew Read preamble Read postamble CK to valid DQS-in DQS-in setup time DQS Write preamble DQS write postamble DQS in high level pulse width DQS in low level pulse width Address and Control input setup time Address and Control input hold time DQ & DM setup time to DQS DQ & DM hold time to DQS DQ/DQS output hold time from DQS Row cycle time Refresh row cycle time Row active time
RAS to CAS Delay Row precharge time Row active to Row active delay Write recovery time Internal Write to Read Command Delay Mode register set cycle time Average Periodic Refresh interval Self refresh exit to read command delay Self refresh exit to non-read command delay Auto Precharge write recovery + precharge time DQ and DM input puls width Cntrol and Address input pulse width

-0.7 -0.7 -0.7 0.9 0.4 0.8 0 0.35 0.4 0.35 0.35 0.9 0.9 0.45 0.45 tHP -0.55 60 72 40 20 20 10 15 2 10 200 75 35 1.75 2.2

0.7 0.7 0.7 0.7 0.45 1.1 0.6 1.2 0.6 120K 7.8 -

4 5

6 6

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Parameter Symbol Min.

EM6AB160TSA
Max. Unit

Table 17. Recommended A.C. Operating Conditions (VDD = 2.5V 5%, TA = 0~70 C)
Input High Voltage (AC) Input Low Voltage (AC) Input Different Voltage, CK and CK inputs VIH (AC) VIL (AC) VID (AC) VREF + 0.35 0.7 0.5*VDDQ-0.2 VREF 0.35 VDDQ + 0.6 0.5*VDDQ+0.2 V V V V

Input Crossing Point Voltage, CK and CK inputs VIX (AC)

Note:

1) Enables on-chip refresh and address counters. 2) Min(tCL, tCH) refers to ther smaller of the actual clock low time and actual clock high time as provided to the device. 3) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving(HZ), or begins driving(LZ). 4) The specific requirement is that DQS be valid (High, Low, or at some point on a valid transition) on or before this CLK edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 5) The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 6) For command/address and CK & CK slew rate 1.0V/ns. 7) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 8) Power-up sequence is described in Note 10

9) A.C. Test Conditions

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Table 17. SSTL _2 Interface
Reference Level of Output Signals (VREF) Output Load Input Signal Levels Input Signals Slew Rate Reference Level of Input Signals 0.5 * VDDQ

EM6AB160TSA

Reference to the Test Load VREF+0.35 V / VREF-0.35 V 1 V/ns 0.5 * VDDQ

Figure 3. SSTL_2 A.C. Test Load 0.5 * VDDQ

50 DQ, DQS Z0=50 30pF

10) Power up Sequence Power up must be performed in the following sequence. 1) Apply power to VDD before or at the same time as VDDQ, VTT and VREF when all input signals are held "NOP" state and maintain CKE LOW. 2) Start clock and maintain stable condition for minimum 200s. 3) Issue a NOP command and keep CKE HIGH 4) Issue a Precharge All command. 5) Issue EMRS enable DLL. 6) Issue MRS reset DLL. (An additional 200 clock cycles are required to lock the DLL). 7) Precharge all banks of the device. 8) Issue two or more Auto Refresh commands. 9) Issue MRS with A8 to low to initialize the mode register.

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Timing Waveforms Figure 4. Activating a Specific Row in a Specific Bank
CK CK CKE CS
HIGH

EM6AB160TSA

RAS

CAS

WE

Address

RA

BA0,1

BA

RA=Row Address BA=Bank Address

Dont Care

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Figure 5. tRCD and tRRD Definition
CK CK

EM6AB160TSA

COMMAND

ACT

NOP

NOP

ACT

NOP

NOP

RD/WR

NOP

Address

Row

Row

Col

BA0,BA1

Bank A

Bank B

Bank B

tRRD

tRCD Dont Care

Figure 6. READ Command

CK CK CKE CS RAS CAS WE A0 - A9 A10
DIS AP

HIGH

CA
EN AP

BA0,1

BA

CA=Column Address BA=Bank Address EN AP=Enable Autoprecharge DIS AP=Disable Autoprecharge

Dont Care

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Figure 7. Read Burst Required CAS Latencies (CL=2)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

NOP

NOP

NOP

NOP

ADDRESS

Bank A, Col n

CL=2

DQS DQ
DO n

DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care

Read Burst Required CAS Latencies (CL=2.5)

CK CK

COMMAND

READ

NOP

NOP

NOP

NOP

NOP

ADDRESS

Bank A, Col n
CL=2.5

DQS DQ
DO n

DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care

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Read Burst Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

NOP

NOP

NOP

NOP

ADDRESS

Bank A, Col n
CL=3

DQS DQ
DO n

DO n=Data Out from column n Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care

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CK CK

EM6AB160TSA

Figure 8. Consecutive Read Bursts Required CAS Latencies (CL=2)

COMMAND

READ

NOP

READ

NOP

NOP

NOP

ADDRESS

Bank, Col n
CL=2

Bank, Col o

DQS DQ
DO n DO n

DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device

Dont Care

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Consecutive Read Bursts Required CAS Latencies (CL=2.5)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

READ

NOP

NOP

NOP

ADDRESS

Bank, Col n
CL=2.5

Bank, Col o

DQS DQ
DO n DO o

DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device

Dont Care

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Consecutive Read Bursts Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

READ

NOP

NOP

NOP

ADDRESS

Bank, Col n
CL=3

Bank, Col o

DQS DQ
DO n DO o

DO n (or o)=Data Out from column n (or column o) Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first) 3 subsequent elements of Data Out appear in the programmed order following DO n 3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o Read commands shown must be to the same device

Dont Care

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CK CK

EM6AB160TSA

Figure 9. Non-Consecutive Read Bursts Required CAS Latencies (CL=2)

COMMAND

READ

NOP

NOP

READ

NOP

NOP

ADDRESS

Bank, Col n
CL=2

Bank, Col o

DQS DQ
DO n DO o

DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o)

Dont Care

Non-Consecutive Read Bursts Required CAS Latencies (CL=2.5)

CK CK

COMMAND

READ

NOP

NOP

READ

NOP

NOP

NOP

ADDRESS

Bank, Col n

Bank, Col o

CL=2.5

DQS DQ
DO n DO o

DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o)

Dont Care

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Non-Consecutive Read Bursts Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

NOP

READ

NOP

NOP

NOP

ADDRESS

Bank, Col n
CL=3

Bank, Col o

DQS DQ DO n (or o)=Data Out from column n (or column o) Burst Length=4 3 subsequent elements of Data Out appear in the programmed order following DO n (and following DO o)
DO n DO o

Dont Care

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CK CK

EM6AB160TSA

Figure 10. Random Read Accesses Required CAS Latencies (CL=2)

COMMAND

READ

READ

READ

READ

NOP

NOP

ADDRESS

Bank, Col n

Bank, Col o

Bank, Col p

Bank, Col q

CL=2

DQS DQ
DO n DO n' DO o DO o' DO p DO p' DO q

DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks

Dont Care Random Read Accesses Required CAS Latencies (CL=2.5)

CK CK

COMMAND

READ

READ

READ

READ

NOP

NOP

ADDRESS

Bank, Col n

Bank, Col o

Bank, Col p

Bank, Col q

CL=2.5

DQS DQ
DO n DO n' DO o DO o' DO p DO p'

DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks

Dont Care

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Random Read Accesses Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

READ

READ

READ

NOP

NOP

ADDRESS

Bank, Col n

Bank, Col o

Bank, Col p

Bank, Col q

CL=3

DQS DQ
DO n DO n' DO o DO o' DO p

DO n, etc. =Data Out from column n, etc. n', etc. =the next Data Out following DO n, etc. according to the programmed burst order Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted Reads are to active rows in any banks

Dont Care

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CK CK

EM6AB160TSA

Figure 11. Terminating a Read Burst Required CAS Latencies (CL=2)

COMMAND

READ

NOP

BST

NOP

NOP

NOP

ADDRESS

Bank A, Col n
CL=2

DQS DQ
DO n

DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care Terminating a Read Burst Required CAS Latencies (CL=2.5)

CK CK

COMMAND

READ

NOP

BST

NOP

NOP

NOP

ADDRESS

Bank A, Col n
CL=2.5

DQS DQ
DO n

DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care

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Terminating a Read Burst Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

BST

NOP

NOP

NOP

ADDRESS

Bank A, Col n

CL=3

DQS DQ
DO n

DO n = Data Out from column n Cases shown are bursts of 8 terminated after 4 data elements 3 subsequent elements of Data Out appear in the programmed order following DO n

Dont Care

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Figure 12. Read to Write Required CAS Latencies (CL=2)
CK CK COMMAND READ BST NOP
WRITE

EM6AB160TSA

NOP

NOP

ADDRESS

Bank, Col n
CL=2

Bank, Col o
tDQSS min

DQS DQ DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order
DO n DI o

Dont Care

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Read to Write Required CAS Latencies (CL=2.5)
CK CK COMMAND READ BST NOP NOP

EM6AB160TSA

WRITE

NOP

ADDRESS

Bank, Col n
CL=2.5

Bank, Col o
tDQSS min

DQS DQ DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order
DO n DI o

Dont Care

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Read to Write Required CAS Latencies (CL=3)
CK CK COMMAND READ BST NOP NOP

EM6AB160TSA

WRITE

NOP

ADDRESS

Bank, Col n
CL=3

Bank, Col o
tDQSS min

DQS DQ
DO n DI o

DM DO n (or o)= Data Out from column n (or column o) Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST command shown can be NOP) 1 subsequent element of Data Out appears in the programmed order following DO n Data in elements are applied following DI o in the programmed order

Dont Care

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Figure 13. Read to Precharge Required CAS Latencies (CL=2)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

PRE

NOP

NOP

ACT

tRP
ADDRESS
Bank A, Col n
CL=2
Bank (a or all) Bank A, Row

DQS DQ
DO n

DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met

Dont Care

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Read to Precharge Required CAS Latencies (CL=2.5)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

PRE

NOP

NOP

ACT

tRP
ADDRESS
Bank A, Col n
Bank (a or all) Bank A, Row

CL=2.5

DQS DQ
DO n

DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met

Dont Care

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Read to Precharge Required CAS Latencies (CL=3)
CK CK

EM6AB160TSA

COMMAND

READ

NOP

PRE

NOP

NOP

ACT

tRP
ADDRESS
Bank A, Col n
CL=3
Bank (a or all) Bank A, Row

DQS DQ
DO n

DO n = Data Out from column n Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8 3 subsequent elements of Data Out appear in the programmed order following DO n Precharge may be applied at (BL/2) tCK after the READ command Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks The Active command may be applied if tRC has been met

Dont Care

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Figure 14. Write Command
CK CK CKE CS RAS CAS WE A0 - A9 A10
DIS AP

EM6AB160TSA

HIGH

CA
EN AP

BA0,1

BA

CA=Column Address BA=Bank Address EN AP=Enable Autoprecharge DIS AP=Disable Autoprecharge

Dont Care

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Figure 15. Write Max DQSS
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

NOP

NOP

NOP

ADDRESS

Bank A, Col n
tDQSS max

DQS DQ DM DI n = Data In for column n 3 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled)
DI n

Dont Care

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Figure 16. Write Min DQSS
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

NOP

NOP

NOP

ADDRESS

Bank A, Col n tDQSS min

DQS DQ DM
DI n

DI n = Data In for column n 3 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled)

Dont Care

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Figure 17. Write Burst Nom, Min, and Max tDQSS
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

NOP

NOP

NOP

NOP

NOP

ADDRESS

Bank , Col n
tDQSS (nom)

DQS DQ
DI n

DM

tDQSS (min)

DQS DQ
DI n

DM

tDQSS (max)

DQS

DQ

DI n

DM

DI n = Data In for column n 3 subsequent elements of Data are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled) DM=UDM & LDM

Dont Care

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Figure 18. Write to Write Max tDQSS
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

NOP

WRITE

NOP

NOP

NOP

ADDRESS

Bank , Col n

Bank , Col o

tDQSS (max)

DQS DQ
DI n DI o

DM DI n , etc. = Data In for column n,etc. 3 subsequent elements of Data In are applied in the programmed order following DI n 3 subsequent elements of Data In are applied in the programmed order following DI o Non-interrupted bursts of 4 are shown DM= UDM & LDM

Dont Care

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Figure 19. Write to Write Max tDQSS, Non Consecutive
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

NOP

NOP

WRITE

NOP

NOP

ADDRESS

Bank Col n

Bank Col o

tDQSS (max)

DQS DQ
DI n DI o

DM

DI n, etc. = Data In for column n, etc. 3 subsequent elements of Data In are applied in the programmed order following DI n 3 subsequent elements of Data In are applied in the programmed order following DI o Non-interrupted bursts of 4 are shown DM= UDM & LDM

Dont Care

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Figure 20. Random Write Cycles Max tDQSS
T0 CK CK COMMAND
WRITE WRITE WRITE WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

WRITE

ADDRESS

Bank Col n

Bank Col o

Bank Col p

Bank Col q

Bank Col r

tDQSS (max)

DQS DQ
DI n DI n DI o DI o DI p DI p DI q DI q

DM

DI n, etc. = Data In for column n, etc. n', etc. = the next Data In following DI n, etc. according to the programmed burst order Programmed Burst Length 2, 4, or 8 in cases shown If burst of 4 or 8, the burst would be truncated Each WRITE command may be to any bank and may be to the same or different devices DM= UDM & LDM

Dont Care

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Figure 21. Write to Read Max tDQSS Non Interrupting
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

T12

NOP

NOP

NOP
tWTR

READ

NOP

NOP

ADDRESS

Bank Col n
tDQSS (max)

Bank Col o
CL=3

DQS DQ
DI n

DM DI n, etc. = Data In for column n, etc. 1 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown tWTR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= UDM & LDM

Dont Care

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Figure 22. Write to Read Max tDQSS Interrupting
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

T12

NOP

NOP

NOP
tWTR

READ

NOP

ADDRESS

Bank Col n

Bank Col o
CL=3

tDQSS (max)

DQS DQ
DI n

DM DI n, etc. = Data In for column n, etc. 1 subsequent elements of Data In are applied in the programmed order following DI n An interrupted burst of 8 is shown, 2 data elements are written tWTR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= UDM & LDM

Dont Care

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T0 CK CK COMMAND
WRITE

EM6AB160TSA

Figure 23. Write to Read Max tDQSS, ODD Number of Data, Interrupting
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12

NOP

NOP

NOP
tWTR

READ

NOP

NOP

ADDRESS

Bank Col n

Bank Col o
CL=3

tDQSS (max)

DQS DQ
DI n

DM

DI n = Data In for column n An interrupted burst of 8 is shown, 3 data elements are written tWTR is referenced from the first positive CK edge after the last Data In Pair (not the last desired Data In element) A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) The READ and WRITE commands are to the same devices but not necessarily to the same bank DM= UDM & LDM

Dont Care

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Figure 24. Write to Precharge Max tDQSS, NON- Interrupting
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

NOP

NOP

NOP

NOP
tWR

PRE

ADDRESS

Bank a, Col n

Bank (a or al)
tRP

tDQSS (max)

DQS DQ
DI n

DM

DI n = Data In for column n 1 subsequent elements of Data In are applied in the programmed order following DI n A non-interrupted burst of 4 is shown tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) DM= UDM & LDM

Dont Care

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Figure 25. Write to Precharge Max tDQSS, Interrupting
T0 CK CK COMMAND
WRITE

EM6AB160TSA

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

T11

NOP

NOP

NOP
tWR

PRE

NOP

ADDRESS

Bank a, Col n

Bank (a or all)

tDQSS (max)

*2

tRP

DQS DQ
DI n

DM

*1

*1

*1

*1

DI n = Data In for column n An interrupted burst of 4 or 8 is shown, 2 data elements are written tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) *1 = can be don't care for programmed burst length of 4 *2 = for programmed burst length of 4, DQS becomes don't care at this point DM= UDM & LDM

Dont Care

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T0 CK CK COMMAND
WRITE

EM6AB160TSA

Figure 26. Write to Precharge Max tDQSS ODD Number of Data Interrupting
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11

NOP

NOP

NOP
tWR

PRE

NOP

ADDRESS

Bank a, Col n

Bank (a or all)

tDQSS (max)

*2

tRP

DQS DQ
DI n

DM

*1

*1

*1

*1

DI n = Data In for column n An interrupted burst of 4 or 8 is shown, 1 data element is written tWR is referenced from the first positive CK edge after the last Data In Pair A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) *1 = can be don't care for programmed burst length of 4 *2 = for programmed burst length of 4, DQS becomes don't care at this point DM= UDM & LDM

Dont Care

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Figure 27. Precharge Command
CK CK CKE CS RAS CAS WE A0-A9, A11,A12
ALL BANKS

EM6AB160TSA

HIGH

A10
ONE BANK

BA0,1

BA BA= Bank Address (if A10 is LOW, otherwise don't care)

Dont Care

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Figure 28. Power-Down
T0 CK CK tIS CKE tIS T1 T2 T3 T4 Tn Tn+1 Tn+2

EM6AB160TSA

Tn+3 Tn+4 Tn+5 Tn+6

COMMAND

VALID

NOP

NOP

VALID

No column access in progress

Enter power-down mode

Exit power-down mode

Dont Care Figure 29. Clock Frequency Change in Precharge

T0
CK CK

T1

T2

T4

Tx

Tx+1

Ty

Ty+1

Ty+2

Ty+3

Ty+4

Tz

CMD CKE

NOP

NOP
Frequency Change Occurs here

NOP

DLL RESET

NOP

NOP

Valid

tIS

tRP
Minmum 2 clocks Required before Changing frequency Stable new clock Before power down exit 200 Clocks

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Figure 30. Data input (Write) Timing
tDQSH DQS tDS DQ tDH tDS DM tDH DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n
DI n

EM6AB160TSA

tDQSL

Dont Care

Figure 31. Data Output (Read) Timing tCH

CK CK DQS

tCL

DQ

tDQSQ
max

tDQSQ tQH
max

tQH

Burst Length = 4 in the case shown

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Figure 32. Initialize and Mode Register Sets
VDD VDDQ
tVDT>=0

EM6AB160TSA

VTT (system*) VREF

tCK tCH tCL tIS tIH

CK CK

CKE

tIS tIH
COMMAND

NOP

PRE

EMRS

MRS

PRE

AR

AR

MRS

ACT

DM

tIS tIH
A0-A9, A11,A12

CODE

CODE
ALL BANKS

CODE

RA

ALL BANKS

tIS tIH
CODE CODE

A10

CODE

RA

tIS tIH
BA0,BA1
High-Z

tIS tIH
BA0=H BA1=L BA0=L BA1=L

tIS tIH
BA0=L BA1=L

BA

DQS DQ
T=200s High-Z **tMRD Extended mode Register set **tMRD tRP 200 cycles of CK** Load Mode Register, Reset DLL (with A8=H) Load Mode Register, (with A8=L) tRFC tRFC **tMRD

Power-up: VDD and CLK stable

*=VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up **=tMRD is required before any command can be applied, and 200 cycles of CK are required before any executable command can be applied The two Auto Refresh commands may be moved to follow the first MRS but precede the second PRECHARGE ALL command

Dont Care

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Figure 33. Power Down Mode
tCK CK CK tIS tIH CKE tIS tIH COMMAND
VALID*

EM6AB160TSA

tCH

tCL

tIS

tIS

NOP

NOP

VALID

tIS tIH ADDR

VALID VALID

DQS

DQ

DM

Enter power-down mode

Exit power-down mode

No column accesses are allowed to be in progress at the time Power-Down is entered *=If this command is a PRECHARGE ALL (or if the device is already in the idle state) then the Power-Down mode shown is Precharge Power Down. If this command is an ACTIVE (or if at least one row is already active) then the Power-Down mode shown is active Power Down.

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Figure 34. Auto Refresh Mode
tCK
CK CK

EM6AB160TSA

tCH tCL

tIS tIH
CKE VALID VALID

tIS tIH
COMMAND

NOP

PRE

NOP

NOP

AR

NOP

AR

NOP

NOP

ACT

A0-A9

RA

A11,A12

RA

ALL BANKS

A10
ONE BANKS

RA
tIS tIH

BA0,BA1

*Bank(s)

RA

DQS

DQ

DM tRP tRFC tRFC

* = Don't Care , if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e., must precharge all active banks) PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other valid commands may be possible after tRFC DM, DQ and DQS signals are all Don't Care /High-Z for operations shown

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Figure 35. Self Refresh Mode
tCK tCH CK CK tIS tIH CKE tIS tIH COMMAND
NOP Clock must be stable before Exiting Self Refresh mode

EM6AB160TSA

tCL

tIS

tIS

AR

NOP

VALID

tIS tIH ADDR

VALID

DQS

DQ

DM tXSNR/ tXSRD**
Exit Self Refresh mode

tRP*

Enter Self Refresh mode

* = Device must be in the All banks idle state prior to entering Self Refresh mode ** = tXSNR is required before any non-READ command can be applied, and tXSRD (200 cycles of CK) is required before a READ command can be applied.

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Figure 36. Read without Auto Precharge
tCK
CK CK

EM6AB160TSA

tCH tCL

tIS tIH
CKE

tIH
VALID VALID VALID

tIS tIH
COMMAND

NOP

READ

NOP

PRE

NOP

NOP

ACT

NOP

NOP

NOP

tIS tIH
A0-A9

Col n

RA

A11,A12 tIS A10

DIS AP ONE BANKS

RA
tIH

ALL BANKS

RA

tIS tIH
BA0,BA1 Bank X CL=3 DM Case 1: tAC/tDQSCK=min
*Bank X

Bank X tRP

tDQSCK tRPRE
DQS min

tRPST

tLZ
DQ

min

DO n

tLZ
Case 2: tAC/tDQSCK=max

min

tAC

min max

tDQSCK tRPRE

tRPST

DQS max DQ max DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge *= Don't Care , if A10 is HIGH at this point

tLZ

DO n

tHZ tAC

max

tLZ

max

PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other commands may be valid at these times Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks

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Figure 37. Read with Auto Precharge
tCK
CK CK

EM6AB160TSA

tCH tCL

tIS tIH
CKE

tIH
VALID VALID VALID

tIS tIH
COMMAND

NOP

READ

NOP

NOP

NOP

NOP

ACT

NOP

NOP

NOP

tIS tIH
A0-A9

Col n

RA

A11,A12

RA

EN AP

A10 tIS tIH

RA

tIS tIH
BA0,BA1 Bank X CL=3 DM Case 1: tAC/tDQSCK=min tRP Bank X

tDQSCK
min

tRPST

tRPRE
DQS

tLZ

min DO n

DQ

tLZ
Case 2: tAC/tDQSCK=max

min

tAC

min

tDQSCK
max

tRPST

tRPRE
DQS max DQ max DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n EN AP = Enable Autoprecharge ACT = ACTIVE, RA = Row Address NOP commands are shown for ease of illustration; other commands may be valid at these times The READ command may not be issued until tRAP has been satisfied. If Fast Autoprecharge is supported, tRAP = tRCD, else the READ may not be issued prior to tRASmin (BL*tCK/2)

tLZ

DO n

tHZ tAC

max

tLZ

max

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Figure 38. Bank Read Access
tCK
CK CK

EM6AB160TSA

tCH tCL

tIS tIH
CKE

tIS tIH
COMMAND

NOP

ACT

NOP

NOP

NOP

READ

NOP

PRE

NOP

NOP

ACT

tIS tIH
A0-A9

RA

Col n

RA

A11,A12

RA
tIS tIH

RA

ALL BANKS

A10

RA
DIS AP ONE BANKS

RA

tIS tIH
BA0,BA1
Bank X Bank X
*Bank X

Bank X

tRC tRAS tRCD

DM Case 1: tAC/tDQSCK=min CL=3

tRP

tDQSCK tRPRE
DQS min

tRPST

DQ

min

tLZ

DO n min

tLZ

Case 2: tAC/tDQSCK=max DQS max DQ

min

tAC tDQSCK
max

tRPRE tLZ

tRPST tHZ

max DO n max

tLZ

DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge *= Don't Care , if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting)

max

tAC

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Figure 39. Write without Auto Precharge
tCK
CK CK

EM6AB160TSA
tCH tCL
tIH
VALID

tIS tIH
CKE

tIS tIH
COMMAND

NOP

WRITE

NOP

NOP

NOP

NOP

PRE

NOP

NOP

ACT

tIS tIH
A0-A9

Col n

RA

A11,A12 tIS tIH A10

DIS AP ONE BANKS

RA

ALL BANKS

RA

tIS tIH
BA0,BA1 Bank X
*Bank X

BA

Case 1: tDQSS=min DQS

tDQSS

tDSH tDQSH

tDSH

tRP tWR

tWPST

tWPRES

tDQSL
DI n

tWPRE
DQ

DM

tDSS
Case 2: tDQSS=max DQS

tDSS tWPST

tDQSS
tWPRES tWPRE

tDQSH

tDQSL
DI n

DQ

DM DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *= Don't Care , if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks

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Figure 40. Write with Auto Precharge
tCK
CK CK

EM6AB160TSA
tCH tCL

tIS tIH
CKE VALID VALID VALID

tIS tIH
COMMAND

NOP

WRITE

NOP

NOP

NOP

NOP

NOP

NOP

NOP

ACT

tIS tIH
A0-A9

Col n

RA

A11,A12

RA

DIS AP

A10 tIS tIH BA0,BA1 Bank X

RA

BA

tDAL
Case 1: tDQSS=min DQS

tDQSS

tDSH tDQSH

tDSH

tWPST

tWPRES

tWPRE
DQ
DI n

tDQSL

DM

Case 2: tDQSS=max DQS

tDQSS

tDSS tDQSH

tDSS

tWPST

tWPRES tWPRE
DQ
DI n

tDQSL

DM

DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DI n EN AP = Enable Autoprecharge ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge

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Figure 41. Bank Write Access
tCK
CK CK

EM6AB160TSA
tCH tCL

tIS tIH
CKE

tIS tIH
COMMAND

NOP

ACT

NOP

NOP

WRITE

NOP

NOP

NOP

NOP

PRE

tIS tIH
A0-A9

RA

Col n

A11,A12

RA
tIS tIH
ALL BANKS

A10

RA
DIS AP ONE BANK

tIS tIH BA0,BA1 Bank X Bank X

*Bank X

tRAS tRCD
Case 1: tDQSS=min DQS

tWR tDQSS tDSH tDQSH tDSH tWPST

tWPRES tWPRE
DQ
DI n

tDQSL

DM

Case 2: tDQSS=max DQS

tDSS tDQSS tDQSH tDSS tWPST

tWPRES tWPRE
DQ
DI n

tDQSL

DM

DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *= Don't Care , if A10 is HIGH at this point

PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks

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Figure 42. Write DM Operation
tCK
CK CK

EM6AB160TSA
tCH tCL

tIS tIH
CKE VALID

tIS tIH
COMMAND

NOP

WRITE

NOP

NOP

NOP

NOP

PRE

NOP

NOP

ACT

tIS tIH
A0-A9

Col n

RA

A11,A12 tIS A10

DIS AP ONE BANKS

RA
tIH

ALL BANKS

RA

tIS tIH
BA0,BA1 Case 1: tDQSS=min DQS Bank X
*Bank X

BA

tDQSS

tDSH tDQSH

tDSH

tRP tWPST tWR

tWPRES

tDQSL

tWPRE
DQ
DI n

DM

tDSS
Case 2: tDQSS=max DQS

tDSS tWPST

tDQSS

tDQSH

tWPRES tWPRE
DI n

tDQSL

DQ

DM

DI n = Data In from column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are provided in the programmed order following DI n DIS AP = Disable Autoprecharge *= Don't Care , if A10 is HIGH at this point

PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25% window of the corresponding positive clock edge Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks

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Figure 43. 66 Pin TSOP II Package Outline Drawing Information Units: mm
D

EM6AB160TSA

C
C

HE

A2

L A1 S e b A F
(TYP)

Symbol A A1 A2 b e C D E HE L L1 F S

Dimension in mm Min Nom Max

--0.05 0.9 0.22 --0.095 22.09 10.03 11.56 0.40 ----0 --------1.0 --0.65 0.125 22.22 10.16 11.76 0.5 0.8 0.25 --0.71 --1.2 0.2 1.1 0.45 --0.21 22.35 10.29 11.96 0.6 ----8 --0.10

Dimension in inch Min Nom Max

--0.002 0.035 0.009 --0.004 0.87 0.395 0.455 0.016 ----0 --------0.039 --0.026 0.005 0.875 0.4 0.463 0.02 0.032 0.01 --0.028 --0.047 0.008 0.043 0.018 --0.008 0.88 0.405 0.471 0.024 ----8 --0.004

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