An 1037
An 1037
An 1037
AN1037
Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications
Abstract
The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low current performance and is ideally suited for low noise mobile applications. This application note describes a low-noise amplifier designed for the Blue Tooth RF standard specifications per Table 1. The emphasis is set on achieving a low noise, high gain performance while keeping current consumption at a minimum and a fairly good input and output match. General information, test results, circuit schematic, board layout and Billing of Material is enclosed as a reference. California Eastern Laboratories also provides this circuit as an evaluation board to its customers for quick turn around design cycles.
APPLICATION NOTE
LNA and to some lesser extent, it improves the linearity of the device. However, the trade-off is reduced gain and the potential for high frequency oscillations. The latter can easily be negated by carefully choosing the out of band matching. The bias network is a simple base resistor that will fix the current to 5 mA. In circuits where temperature stability or reduced sensibility to manufacturing variations is more of an issue, an active stabilization bias can be used with commonly available electronic bipolar transistors. The input matching network comprises only C1 and L1 and is set to achieve !OPT from a 50" input load. L1 is also used as the choke that brings the base current to the transistor and is RF grounded by C2. The long transmissions line to and from C3 are only additional DC chokes to bias the device. The output matching is a simple capacitive match through C7 that provides better than 1.5:1 match. L2 is the RF choke grounded through C5 and further choking is provided by the printed inductive transmission line. The circuit schematic, layout and assembly drawing are available in Figures 1, 2, 3 and the Billing of Material is displayed in Table 2. The matching has been optimized for the particular Blue Tooth receiving band. However, the PCB board can be used in a wide range of applications, from 460 MHz to about 3 GHz for a number of devices, providing that an appropriate matching network is synthesized. The 2.4 GHz LNA results are available in Figure 4-6 and Table 3.
Item 1 2 3 4 5 6 7 8 9 10 11
Parameters Specifications Test LNA Section Results Voltage 3 3 Current 5 5 Operating Frequency 2400-2483.5 1930-1990 Gain 10 12 NF 1.5 1.3 Input IP3 0 3 1 dB Compression Point -5.0 0 Input VSWR (50 Ohms) 2.5:1 (-9.5 dB) -10 Output VSWR (50 Ohms) 1.5:1 (-14 dB) -15 Stability at all Frequencies Unconditionally Stable Unconditionally Stable Operating Temperature -40 to +80 -40 to +80
Notes Low Voltage Low Current US/European Bands Low Noise High IP3
1.100
NE662M04-EVAL
1.500
100722
AN1037
NE662M04
W = 57 mils L = 77 mils W = 57 mils L = 326 mils C1 4.7 pF W = 57 mils L = 139 mils L2 15 nH L1 56 nH W = 57 mils L = 53 mils L3 2.7 nH C7 30 pF W = 57 mils L = 198 mils RF OUT
RF IN
C2 120 pF
W = 10 mils L = 70 mils
W = 10 mils L = 70 mils
R1 30 k P1 VCC
+ C6 4.7 F
25 20
Gain (dB) and Return Loss (dB)
15
S21
15
10 5 0 -5 -10
-5
1 2 S11
-15
S22 2
-20 -25 Start 1.000000000 GHz S11 Stop 4.000000000 GHz S21 S22
-25
-10 -8
POUT
10 0 -10
Output Power (dBm) Average (dBm) IM3
-20 -20 -30 -40 -50 -60 -70 -80 -90 -100 -30 -25 -20 -15 Input Power (dBm) POUT -10 -8 -60 -70 -80 -90 -30 -40 -50
TOI
Average IM3
Average IM5
AN1037 NE662M04-EVNF 24
Input Power (dBm) -30.00 -29.00 -28.00 -27.00 -26.00 -25.00 -24.00 -23.00 -22.00 -21.00 -20.00 -19.00 -18.00 -17.00 -16.00 -15.00 -14.00 -13.00 -12.00 -11.00 -10.00 -9.00 Output Power (dBm) -18.15 -17.20 -16.29 -15.22 -14.20 -13.23 -12.24 -11.25 -10.25 -9.26 -8.28 -7.29 -6.34 -5.36 -4.40 -3.46 -2.57 -1.69 -0.86 -0.14 0.51 1.04 Gain (dB) 11.85 11.80 11.71 11.78 11.80 11.77 11.76 11.75 11.75 11.74 11.72 11.71 11.66 11.64 11.60 11.54 11.43 11.31 11.14 10.86 10.51 10.04 Average (dBm) IM3 -88.57 -87.54 -80.97 -78.80 -75.87 -72.48 -69.83 -66.67 -63.08 -60.93 -57.28 -54.46 -51.67 -48.44 -45.41 -42.37 -39.48 -35.86 -31.86 -27.81 -24.15 -21.04 C / IM3 (dBc) Pavg-avg 70.50 70.42 64.59 63.50 61.58 59.16 57.67 55.33 52.75 51.66 48.91 47.09 45.16 42.83 40.67 38.59 36.34 33.58 30.25 26.83 23.66 21.00 TOI (dBm) Pavg-avg 17.18 18.09 15.91 16.45 16.50 16.27 16.68 16.33 16.04 16.57 16.09 16.17 16.07 15.80 15.60 15.51 15.02 14.52 13.51 12.45 11.34 10.46
Frequency: 2.400 GHz VD: 2.999 V, ID = 5 mA POUT at 1 dB: .168 dBm Gain at 1 dB: 10.744 dB Efficiency at 1 dB: 6.39 % IIP3 at PIN = -21 dBm = +4.77 dBm Noise Figure at 2.4 GHz = 1.15 dB