FH1

High Dynamic Range FET

Product Features
50 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package MTTF > 100 years

Product Description
The FH1 is a high dynamic range FET packaged in a lowcost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 C. The FH1 is available the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH1 will work for other applications within the 50 to 4000 MHz frequency range such as fixed wireless.

Functional Diagram
4

Function Gate Drain Source

Pin No. 1 3 2, 4

Applications
Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security

Specifications (1)
DC Electrical Parameter
Saturated Drain Current, Idss (2) Transconductance, Gm Pinch-off Voltage, Vp (3)

Typical Performance (6)

Units Min
mA mS V 100 -3

Typ
140 120 -1.5

Max
170

Parameter
Frequency S21 S11 S22 Output IP3 (4) Output P1dB Noise Figure Drain Bias Gate Voltage

Units
MHz dB dB dB dBm dBm dB V 900 19 -11 -10 +42 +21.8 2.7

Typical
1960 2140 16.5 16.5 -20 -22 -9 -9 +40 +40 +22.1 +22.1 3.1 3.0 5V @ 140mA 0

RF Parameter
Operational Bandwidth Test Frequency Small-signal Gain, Gss Max Stable Gain, Gmsg Output IP3 (4) P1dB Minimum Noise Figure (5) Drain Bias Gate Bias

Units Min
MHz MHz dB dB dBm dBm dB V V

Typ

Max

50 4000 800 17 18 23 +38 +42 +21 0.77 +5 0

6. The device requires appropriate matching to become unconditionally stable. Parameters reflect performance in an appropriate application circuit.

1. DC and RF parameters are measured under the following conditions unless otherwise noted: 25 C with Vds = 5V, Vgs = 0V, in a 50 system. 2. Idss is measured with Vgs = 0V. 3. Pinch-off voltage is measured with Ids = 0.6 mA. 4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 5. The minimum noise figure has GS = GL = GOPT.

Absolute Maximum Rating

Parameter
Storage Temperature Drain to Source Voltage Gate to Source Voltage Gate Current RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth

Rating
-55 to +150 C +7 V -6 V 4.5 mA 4 dB above Input P1dB +160 C 59 C / W

Ordering Information
Part No.
FH1-G FH1-PCB

Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)

800 - 2200MHz Evaluation Board

Operation of this device above any of these parameters may cause permanent damage.

Standard T/R size = 1000 pieces on a 7 reel. Specifications and information are subject to change without notice.

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

Page 1 of 7 Jan 2011

FH1
24 22 S21 and MSG (dB) 20 18

High Dynamic Range FET

Typical Device Data

Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 C for the unmatched device in a 50 ohm system)
Swp Max 6GHz
0 2.
1.0

1.0

0. 8

3.

4.
0.2

5.0
0.2

10 .0
10.0

10.0

0.2

0.4

0.6

0.8

1.0

2.0

3.0

4.0

16
0

5.0

0.2

0.4

0.6

0.8

1.0

2.0

3.0

4.0

5.0

12 0 1 Frequency (GHz) 2 3

-0

.4

-0

.4

-0

-0

.6

.6

Swp Min 0.01GHz

-0.8

-0.8

-2

-2

.0

.0

Swp Min 0.01GHz

Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The impedance plots are shown from 10 6000 MHz, with markers placed at 0.5 6.0 GHz in 0.5 GHz increments.
Output IP3 vs. Temperature Output IP3 vs. Output Power Noise Figure vs. Frequency

45 40 35 30
5V 100% Idss

45 N o is e F ig u re (d B ) 40 35 30
5V 100% Idss

-1.0

2.5
NF (unmatched device)

2 1.5 1 0.5 0

Minimum NF

O IP 3 (d B m )

25 -40 -15 10 35 60 85 Temperature (C)

O IP 3 (d B m )

25 0 2 4 6 8 10 12 Output Power per tone (dBm)

0.5

-1.0

1.5

Frequency (GHz)

S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)

Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000

0.00 -0.13 -0.34 -0.55 -0.83 -1.16 -1.50 -1.80 -2.03 -2.25 -2.37 -2.55 -2.62

-4.08 -19.64 -39.41 -58.33 -75.93 -93.29 -110.36 -125.64 -140.92 -155.64 -169.80 177.26 165.93

19.36 19.19 18.85 18.47 17.95 17.47 16.82 16.21 15.65 15.05 14.42 13.74 13.18

176.06 164.65 150.19 136.21 123.24 110.92 99.18 88.19 77.53 67.15 57.62 48.11 39.86

-51.05 -37.15 -31.34 -28.24 -26.22 -24.88 -23.95 -23.27 -22.81 -22.39 -22.25 -22.08 -22.01

87.96 78.37 66.75 55.74 45.25 35.22 26.69 18.17 9.87 2.11 -4.68 -11.35 -17.16

-4.38 -4.52 -4.77 -5.19 -5.77 -6.44 -7.14 -7.94 -8.84 -9.57 -10.43 -11.43 -12.30

-3.34 -11.51 -22.43 -33.05 -43.46 -53.09 -61.08 -69.92 -78.43 -86.41 -93.92 -101.88 -108.95

Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)

Freq (MHz) NF,min (dB) MagOpt (mag) AngOpt (deg) Rn

700 800 900 1000 1100 1200 1300 1400

0.51 0.77 0.66 0.74 0.85 0.85 0.95 1.07

0.574 0.535 0.508 0.488 0.463 0.458 0.446 0.450

32.8 37.4 44.1 50.4 56.4 62.0 67.3 73.3

0.403 0.409 0.379 0.365 0.357 0.345 0.335 0.323

Device S-parameters and noise are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 7 Jan 2011

-5.

-4

.0

-3

.0

-4 .0 -5. 0

14

-0.

2 -0.

-10.0

0.

-10.0

-3

.0

0.

DB(GMax())

2. 0

DB(|S(2,1)|)

0.

0.

0.8

Gain and Max. Stable Gain

S11

S22
Swp Max 6GHz

3.

4.

5.0

10.0

FH1

High Dynamic Range FET

800-2200 MHz Application Circuit (FH1-PCB800-2200)

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 900 13.6 -18 -12 +22.8 +44.1 2.9 1900 15.1 -8 -8 +22.8 +43.4 3.1 +5 140
R4 0 Ohm Vcc

2140 16.4 -18 -9 +22.3 +42.9 3.1

S-Parameters
20 0

DB(|S(2,1)|) (L)
15 Gain (dB)

DB(|S(1,1)|) (R)

DB(|S(2,2)|) (R)
-5 S11, S22 (dB)

10

-10

-15

0 0.7 0.9 1.1 1.3 1.5 1.7 Frequency (GHz) 1.9 2.1 2.3

-20

C4 0.018 uF C6 100 pF C3 100 pF

R6 160 Ohm C1 3.6 Ohm

R7 160 Ohm
2

L1 18 nH R2 0 Ohm

R1 0 Ohm
1

C7 C5

C7 2.2 pF

C5 5.6 nH

C2 100 pF

Notes: 1. 2. 3. 4.

The right edge of C5 is 290 mil from the left edge of pin 1 of the FH1-G. The right edge of C7 is 70 mil from the right edge of C5. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. A dc blocking capacitor needs to be placed before C1 if DC is present at the input of the circuit.

Reference Design: 35 MHz, 17 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA
ID=R6 R=390 Ohm

Gain (dB)

16

-10

15

-15

4.0

3.2

14

-20

13 25 30 35 Frequency (MHz) 40 45

-25

ID=C6 C=1000 pF

ID=R7 R=390 Ohm

+5V

ID=C3 C=1000 pF

NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF

1 2

ID=L1 L=470 nH

ID=C2 C=1000 pF ID=R8 L=390 nH

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 7 Jan 2011

S11, S22 (dB)

30 16.6 -19 -21

35 16.8 -20 -16 +21 +39 3.4 +5 140

40 16.8 -13 -14

Gain / Return Loss

18
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)

17

-5

FH1

High Dynamic Range FET

Reference Design: 170 MHz, 14 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current
ID=R6 R=240 Ohm

MHz dB dB dB dBm dBm dB V mA

13

-20

2.7

2.7

12

-30

11 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22

-40

ID=C6 ID=R7 C=1000 pF R=240 Ohm

+5V

ID=C3 C=1000 pF

NET="FH1" ID=R1 C=24 pF

1 2

ID=L1 L=220 nH

ID=R2 R=4 Ohm ID=R8 L=82 nH

ID=C2 C=1000 pF

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Reference Design: 260 MHz, 25 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 250 25.2 -23 -12 260 25.1 -22 -14 +22.4 +39.5 1.9 +5 140 270 24.9 -13 -17
Gain / Return Loss
26 0 25 -5 S11, S22 (dB)

Gain (dB)

24

-10

23

-15

1.8

2.1

22
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)

-20

21 0.2
ID=C3 C=1.8e4 pF

-25 0.22 0.24 0.26 Frequency (GHz) 0.28 0.3

+5V ID=C6 ID=R7 C=1000 pF R=2000 Ohm

ID=R6 R=2000 Ohm

NET="FH1" ID=L1 L=220 nH

ID=C1 C=1000 pF

ID=R1 L=120 nH
1

ID=C2 C=1000 pF ID=C5 R=1e4 Ohm C=0.2 pF R=3.3 Ohm

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 7 Jan 2011

S11, S22 (dB)

Gain (dB)

160 14.1 -25 -21

170 14.2 -33 -23 +21.6 +42 2.7 +5 140

180 14.3 -28 -26

Gain / Return Loss (dB)

15
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)

14

-10

FH1

High Dynamic Range FET

Reference Design: 460 MHz, 20 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 450 19.9 -24 -16 460 19.9 -24 -15 +21.6 +42 2.08 +5 140 470 19.9 -21 -15
Gain / Return Loss
21
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)

20

-5 S11, S22 (dB) S11, S22 (dB)

Gain (dB)

19

-10

18

-15

1.95

2.17

17

-20

16 0.34 0.38 0.42 0.46 0.5 Frequency (GHz) 0.54 0.58

-25

ID=R6 R=750 Ohm

ID=C6 C=1000 pF

ID=R7 +5V R=750 Ohm

ID=C3 C=1000 pF

NET="FH1" ID=C1 C=1000 pF ID=R1 L=36 nH

1 2

ID=L1 L=100 nH

ID=R2 L=10 nH ID=C5 R=5000 Ohm

ID=C2 C=1000 pF

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Reference Design: 790 MHz, 19 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 746 19.2 -20 -22 790 19.4 -28 -23 +22 +41 2.3 +5 140
+5V ID=C4 C=1e4 pF ID=C6 C=100 pF ID=R7 R=560 Ohm ID=C3 C=100 pF

Gain (dB)

835 19.3 -15 -22

Gain / Return Loss

20 19.5 19 18.5 18 17.5 17 0.7 0.75 0.8 Frequency (GHz) 0.85 0.9
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)

0 -5 -10 -15 -20 -25 -30

ID=R6 R=560 Ohm ID=C1 C=100 pF

1

NET="FH1"
2

ID=L1 L=27 nH

ID=R1 L=8.2 nH ID=C5 L=10 nH

ID=R2 L=2.2 nH

ID=C2 C=100 pF

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 7 Jan 2011

FH1
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Voltage Current

High Dynamic Range FET

Reference Design: 790 MHz, 17 dB Gain

GHz dB dB dB dBm dBm dB V mA 746 17.3 -19 -22 790 17.4 -19 -22 +22 +41 2.1 +5 140 835 17.4 -16 -21
Gain / Return Loss
19 0

Noise Figure vs. Frequency

4
25 C 50 C 90 C

DB(|S(1,1)|) (R)
18

DB(|S(2,1)|) (L)

DB(|S(2,2)|) (R)
-5 S11, S22 (dB)

3 N F (d B ) 2 1 0 740

G ain (dB)

17

-10

16

-15

2.0

2.2

15

-20

14 0.7
+5V

-25 0.75
ID=C4 C=10000 pF

760

780

800

820

840

0.8 Frequency (GHz)

0.85

0.9

Frequency (MHz)

ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm NET="FH1"

2

ID=C3 C=100 pF ID=L1 L=33 nH ID=C2 C=100 pF

1

ID=C1 C=100 pF

ID=R1 L=12 nH

ID=C5 R=10000 Ohm

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Reference Design: 880 MHz, 18 dB Gain

Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 850 17.95 -16 -23 875 17.96 -15 -22 +22 +41 1.83 +5 140
+5V

Gain (dB)

17

-10

16

-15

1.8

1.85

15

-20

14 0.7
ID=C4 C=1e4 pF

-25 0.8 Frequency (GHz) 0.9 1

ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm NET="FH1"

2

ID=C3 C=100 pF ID=L1 L=33 nH ID=C2 C=100 pF

1

ID=C1 C=100 pF

ID=R1 L=10 nH

ID=C5 R=1e4 Ohm

Notes: 1. Circuit Board Material: .014 Getek ML200DSS (r = 4.2), 1 oz copper. The main microstrip line has a line impedance of 50 . 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.

Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 7 Jan 2011

S11, S22 (dB)

900 18.00 -15 -22

Gain / Return Loss (dB)

19 0

DB(|S(1,1)|) (R)
18

DB(|S(2,1)|) (L)

DB(|S(2,2)|) (R)
-5

FH1

High Dynamic Range FET

FH1-G Mechanical Information

This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.

Outline Drawing

Product Marking
The FH1-G will be marked with an FH1G designator. A lot code (XXXX-X) is also marked below the part designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the Application Notes section.

FH1G XXXX-X

MSL / ESD Rating Land Pattern

ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:

Class 1B Passes /500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes /1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101

MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135) diameter drill and have a final plated thru diameter of .25 mm (.010). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.

Specifications and information are subject to change without notice. TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 7 Jan 2011