TPC8A03-H

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)

TPC8A03-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Built-in schottky barrier diode Low forward voltage: VDSF = 0.6 V(max) High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 54 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Tc=25) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 20 17 68 1.9 Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1B

Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)

Drain power dissipation

Weight: 0.085g (typ.)

W

Drain power dissipation

1.0

Circuit Configuration
8 7 6 5

Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy

188 17 0.108 150 55 to 150

mJ A mJ C C

Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Rth (ch-a)

125

C/W

Marking (Note 5)

TPC8A03 H

Part No. (or abbreviation code) Lot No. A line indicates lead(Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 25.4 25.4 0.8 (Unit: mm)

FR-4 25.4 25.4 0.8 (Unit: mm)

(a)

(b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 17 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)

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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Miller) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 17 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss rg tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 5 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A VDS = 10 V, ID = 8.5 A Min 30 15 1.3 27 ID = 8.5 A VOUT RL = 1.76 Typ. 5.1 4.1 54 2640 100 610 1.0 3.6 11.0 7.2 42 36 19 7.6 5.0 8.4 Max 100 100 2.3 7.0 5.6 3430 150 1.5 ns nC pF Unit nA A V V m S

VDD 15 V Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 17 A VDD 24 V, VGS = 5 V, ID = 17 A

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Peak forward current Forward voltage (diode) Pulse (Note 1) Symbol IFP VDSF Test Condition IDR = 1 A, VGS = 0 V IDR = 17 A, VGS = 0 V Min Typ. 0.4 Max 68 0.6 1.2 Unit A V V

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5 4.5 20 8 10 16 4

ID VDS
3.0 Common source Ta = 25C Pulse test

10 8 5 4.5 50 4

ID VDS
3.2 3.1 Common source Ta = 25C Pulse test 3.0

(A)

ID

12 2.8 8 2.7 4 VGS = 2.5 V 0 0

ID Drain current

(A)
30

2.9

40

Drain current

20

2.9

2.8 10 VGS = 2.6 V 0 1 2 3 4 5

0.2

0.4

0.6

0.8

1.0

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
30 Common source VDS = 10 V Pulse test 0.20

VDS VGS
Common source Ta = 25C Pulse test 0.15

(A)

24

ID

Drain-source voltage

18

Drain current

VDS
100 Ta = 55C

(V)
0.10

12

ID = 17 A

25

0.05

8.5 4.3

0 0

10

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

Yfs ID
1000 Common source VDS = 10 V Pulse test 100 Ta = 55C 10

RDS (ON) ID

(S)

Drain-source ON-resistance RDS (ON) (m)

|Yfs|

4.5

Forward transfer admittance

100 10

25

VGS = 10 V

Common source Ta = 25C Pulse test

0.1 0.1

10

100

1 0.1

10

100

Drain current

ID

(A)

Drain current

ID

(A)

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RDS (ON) Ta
12 Common source Pulse test 9 ID = 4.3 A,8.5 A,17 A 100 4.5

IDR VDS (A)

Drain-source ON-resistance RDS (ON) (m)

10 3

Drain reverse current

IDR

1 10 VGS = 0 V

6 VGS = 4.5 V 3 VGS = 10 V 0 80 ID = 4.3 A,8.5 A,17 A

Common source Ta = 25C Pulse test 1 0 0.2 0.4 0.6 0.8 1.0

40

40

80

120

160

Ambient temperature

Ta

(C)

Drain-source voltage

VDS

(V)

Capacitance VDS
10000 Ciss 2.5

Vth Ta Vth (V) Gate threshold voltage

(pF)

2.0

1000 Coss

1.5

Capacitance

1.0

100 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 10

Crss

0.5

10 0.1

100

0 80

Common source VDS = 10 V ID = 1 mA Pulse test 40 0 40 80 120 160

Drain-source voltage

VDS

(V)

Ambient temperature

Ta

(C)

PD Ta
2.0

Dynamic input/output characteristics

50 Common source ID = 17 A Ta = 25C Pulse test 20

(V)

40

16

PD

VDS

Drain power dissipation

Drain-source voltage

1.0

(2)

VDS 20

VDD = 6 V 24V 12V 8

0.5

10

0 0

40

80

120

160

0 0

10

20

30

40

0 50

Ambient temperature

Ta

(C)

Total gate charge

Qg

(nC)

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Gate-source voltage

30

12

VGS

1.5

(V)

(1)

(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s

(W)

TPC8A03-H

rth tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)

Transient thermal impedance rth (C/W)

100 (1) 10

0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse width

tw

(s)

Safe operating area

1000

(A)

100

ID max (Pulse) * t =1 ms *

ID

Drain current

10

10 ms *

*Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature.

0.1 0.1

VDSS max 10 100

Drain-source voltage

VDS

(V)

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IDR VDSF
100

IDSS Tch
100000 Pulse test VGS = 0 V 10000

(typ.)

(A)

(A)

Pulse test VGS = 0 V

10 20 VDS = 30 V 5

IDR

Drain reverse current

Drain cutoff current

10

100 75

IDSS
Ta = 25C 1 0

1000

100

0.2

0.4

0.6

0.8

10 0

40

80

120

160

Drain-source voltage

VDSF

(V)

Channel temperature

Tch

(C)

Tch VDS
160

(C)

140 120 100 80 60 40 20 0 0

Pulse test VGS = 0 V

Channel temperature

Tch

10

20

30

40

Drain-source voltage

VDS

(V)

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TPC8A03-H

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN GENERAL

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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