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    FW26025A1 Power Darlington Transistor

    Uploaded by

    diegobenitez
    FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    FW26025A1 Power Darlington Transistor

    Uploaded by

    diegobenitez
    269 views4 pages
    FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.

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    © Attribution Non-Commercial (BY-NC)

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    FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    269 views4 pages

    FW26025A1 Power Darlington Transistor

    Uploaded by

    diegobenitez
    FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4
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    The document describes a silicon PNP power transistor in Darlington configuration with an integrated antiparallel diode.

    The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.

    The absolute maximum ratings are: Collector-Base Voltage (IE = 0) 100 V, Collector-Emitter Voltage (IB = 0) 100 V, Emitter-Base Voltage (IC = 0) 5 V, Collector Current 20 A, Collector Peak Current 40 A, Base Current 0.5 A, Total Dissipation at Tc ≤ 25 oC 160 W, Storage Temperature -65 to 200 oC, Max. Operating Junction Temperature 200 oC.

    FW26025A1

    PNP POWER DARLINGTON TRANSISTOR

    INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

    APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.

    1 2
    TO-3

    INTERNAL SCHEMATIC DIAGRAM

    R1 Typ. = 8 K

    R2 Typ. = 60

    ABSOLUTE MAXIMUM RATINGS


    Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C
    o

    Value 100 100 5 20 40 0.5 160 -65 to 200 200

    Unit V V V A A A W
    o o

    Storage Temperature Max. Operating Junction Temperature

    C C

    November 2003

    1/4

    FW26025A1
    THERMAL DATA
    R thj-case Thermal Resistance Junction-case Max 1.09
    o

    C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 50 V V EB = 5 V I C = 2 mA I C = 100 mA I C = 10 A I C = 20 A I C = 20 A I C = 10 A IC = 2 A I C = 10 A I C = 30 A IC = 3 A IE = 0 I B = 40 mA I B = 200 mA I B = 200 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 10 V V CB = 10 V f = 1KHz f = 100KHz 5000 750 200 300 600 pF 90 100 2 3 4 2.8 18000 T C = 150 o C Min. Typ. Max. 0.5 5 1 2 Unit mA mA mA mA V V V V V V

    V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

    h fe C CBO

    Small Signal Current Gain Collector Base Capacitance

    Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

    2/4

    FW26025A1

    TO-3 MECHANICAL DATA


    mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193

    DIM.

    P G

    D C

    P003F
    3/4

    FW26025A1

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. 2003 STMicroelectronics All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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