2N3906 / MMBT3906 / PZT3906

2N3906

MMBT3906
C

E C B

TO-92
E

SOT-23
Mark: 2A

PZT3906
C

E C B

SOT-223

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 40 5.0 200 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

1997 Fairchild Semiconductor Corporation

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VBE = 3.0 V VCE = 30 V, VBE = 3.0 V 40 40 5.0 50 50 V V V nA nA

ON CHARACTERISTICS
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.65

0.25 0.4 0.85 0.95

V V V V

SMALL SIGNAL CHARACTERISTICS

fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3906) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 250 4.5 10.0 4.0 MHz pF pF dB

SWITCHING CHARACTERISTICS (except MMPQ3906)

td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 225 75 ns ns ns ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3906 625 5.0 83.3 200

Max
*PZT3906 1,000 8.0 125

Units
mW mW/C C/W C/W

Symbol
PD RJA

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die

Max
**MMBT3906 350 2.8 357 MMPQ3906 1,000 8.0 125 240

Units
mW mW/C C/W C/W C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
250
Vce = 1V 125 C

VCESAT- COLLECTOR EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Collector-Emitter Saturation Voltage vs Collector Current

0.3 = 10

0.25 0.2
25 C

200 150

0.15 0.1
125 C

25 C

100

- 40 C

0.05
- 40 C

50 0.1 0.2

0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA)

10 100 I C - COLLECTOR CURRENT (mA)

200

VBEON - BASE EMITTER ON VOLTAGE (V)

VBESAT- BASE EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1 0.8 0.6 0.4 0.2 0 = 10
- 40 C 25 C 125 C

Base Emitter ON Voltage vs Collector Current

1 0.8 0.6
125 C - 40 C 25 C

0.4 0.2 0 0.1 V CE = 1V

10 100 I C - COLLECTOR CURRENT (mA)

P 66

200

1 10 I C - COLLECTOR CURRENT (mA)

P 66

25

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Collector-Cutoff Current vs. Ambient Temperature

I CBO- COLLECTOR CURRENT (nA) 100 V 10
CB

Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage
10
C obo

= 25V CAPACITANCE (pF)

8 6 4 2 0 0.1
C ibo

0.1

0.01 25

50 75 100 TA - AMBIENT TEMPERATURE ( C)

125

1 REVERSE BIAS VOLTAGE (V)

10

Noise Figure vs Frequency

6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2
I C = 1.0 mA, R S = 200 I C = 100 A, R S = 200

Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB) 10 8 6
I C = 100 A I C = 1.0 mA

V CE = 5.0V f = 1.0 kHz

4 2 0 0.1

1 0 0.1

I C = 100 A, R S = 2.0 k

1 10 f - FREQUENCY (kHz)

100

1 10 R S - SOURCE RESISTANCE ( k )

100

Switching Times vs Collector Current

500
ts

Turn On and Turn Off Times vs Collector Current

500
t off Ic t on I B1 = 10

100 TIME (nS)

100 TIME (nS)

tf

t on

10 I B1 = I B2 = 1
Ic 10

tr

10

V BE(OFF)= 0.5V
t off I = I = B1 B2 Ic 10

td

1 1 10 I C - COLLECTOR CURRENT (mA) 100

10 I C - COLLECTOR CURRENT (mA)

100

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Power Dissipation vs Ambient Temperature

1 PD - POWER DISSIPATION (W)

SOT-223
0.75

TO-92

0.5

SOT-23
0.25

25

50 75 100 TEMPERATURE (o C)

125

150

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